Silver Indium Phosphorus Sulfide (AgInP2S6) Powder

2D Materials, Low Dimensional Materials, Transition Metal Chalcogenides (TMCs), Transition Metal Phosphorus Chalcogenides

MSDS

Silver Indium Phosphorus Sulfide (AgInP2S6) Powder

High purity AgInP2S6 powder

Used to process quantum dot solutions and nano-plates into few-layer films

Silver indium phosphorus sulfide (AgInP₂S₆) belongs to the hexachalcogenohypodiphosphates family. AgInP₂S₆ has a layered structure like most of the other layered materials, i.e. graphite.

AgInP₂S₆ a typical Transition metal thio/selenophosphates (TPS) with a rhombohedral structure that contains a sulfur framework with the octahedral voids filled by Ag, In, and P–P triangular patterns.

Atomically thin AgInP₂S₆ layers can be synthesized through a facile probe sonication exfoliation of either bulk crystals or powder.

High Purity

≥99.995% AgInP2S6 Powder

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Low Cost

Low Cost AgInP2S6

Applications

Process quantum dot solutions and nano-plates into few-layer films

Structure of Silver Indium Phosphorus Disulfide Powder

Bulk AgInP₂S₆ crystallizes in rhombohedral structure and it is non-centrosymmetric with two non-equivalent packet layers in the unit cell. Both metal Ag and In atoms are coordinated with six S atoms and P atoms are tetrahedral coordinated to form a binuclear [P₂S₆] ^4-cluster which are located in the centre of hexagon composed by alternative three Ag atoms and three In atoms. The metal (Ag and In) layers are sandwiched by two layers of S atoms, while the [P₂S₆] ^4- pairs act as stanchions inside the layer.

In the bulk and multilayer samples, the neighbouring layers are coupled by van der Waals interactions. The [P₂S₆] dumbbell pairs and Ag atoms stack alternately in the nearby two layers, leading to the AB stacking order of the adjacent layers.

AgInP2S6 crystal structure — Silver Indium Phosphorus Sulfide (AgInP₂S₆) crystal structure

Applications of Silver Indium Phosphorus Disulfide Powder

Semiconducting AgInP₂S₆ is favoured for visible light absorption with an appropriate bandgap structure of ~2.4 eV. Single and quaternary atomically thin AgInP₂S₆ sheets can be used in applications for photoreduction of CO2 into olefiant hydrocarbon fuels.

Synthesis

Obtained via the CVT method, AgInP₂S₆powder with purities of over 99.995% have been achieved.

Usage

AgInP₂S₆ powder is suitable for liquid chemical exfoliation to process AgInP₂S₆ quantum dot solutions and nano-plates down to few-layer films. High-quality, high-purity AgInP₂S₆ powder is also used for CV deposition of ultra-thin single or few-layer films.

Literature and Reviews

Vacancy-defect modulated pathway of photoreduction of CO2 on single atomically thin AgInP2S6 sheets into olefiant gas, W. Gao et al., Nat Commun 12, 4747 (2021); DOI: 10.1038/s41467-021-25068-7.
Second-harmonic generation in quaternary atomically thin layered AgInP2S6 crystals, X. Wang et al., Appl. Phys. Lett., 109, 123103 (2016); DOI: 10.1063/1.4962956.
Structural, electronic, vibration and elastic properties of the layered AgInP2S6 semiconducting crystal –DFT approach, T. Babuka et al., RSC Adv., 8, 6965 (2018); DOI: 10.1039/c7ra13519j.

Technical Data

CAS Number	N/A
Chemical Formula	AgInP₂S₆
Molecular Weight	477.03 g/mol
Bandgap	E_g = ~2.4 eV eV [1]
Preparation	Synthetic - Chemical Vapour Transport (CVT)
Structure	Rhombohedral
Electronic Properties	2D semiconductor
Melting Point	N/A
Colour	Silver/Dark Grey
Classification / Family	Metal phosphorus trichalcogenides (MPTs), Hexachalcogenohypodiphosphates, 2D semiconductor materials, Nano-electronics, Nano-photonics, Transistors, Photovoltaics, Materials science