Tantalum (V) Oxide Powder

CAS Number 1314-61-0

Advanced Ceramic Materials, Inorganic Electronic Materials, Metal Oxides, Perovskite Interface Materials

A dielectric metal oxide

with high dielectric constant for a wide range of applications including capacitors, solar cells, and batteries, Ta₂O₅

Overview | Product Information | Related Products

Tantalum (V) oxide (CAS number 1314-61-0), commonly known as tantalum pentoxide, is a dielectric material with a high dielectric constant of 22-25 (amorphous). Owing to its high dielectric constant, tantalum oxide is widely used in the production of capacitors. Tantalum oxide is also used as a gate dielectric in cadmium sulfide (CdS) field-effect transistors (FETs), demonstrating an electron mobility of 2.97 cm²/V·s with a low threshold voltage of 1.0 V.

Tantalum oxide also serves as electron transport layers and passivation layers in perovskite solar cells. Ta₂O₅ enhances the open-circuit voltage of mesoscopic perovskite solar cells, contributing to an excellent power conversion efficiency (PCE) of 21.3% (FTO/mesoporous-TiO₂/Ta₂O₅/perovskite/spiro-OMeTAD/Au).

A dielectric metal oxide

with high dielectric constant 22–25

Multifunctional material

applied in FETs, solar cells, and capacitors

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High Purity

99.9%

General Information

CAS Number	1314-61-0
Chemical Formula	Ta₂O₅
Full Name	Ditantalum pentaoxide
Molecular Weight	441.89 g/mol
Melting Point	1800 °C
Synonyms	Tantalum pentoxide, Tantalum oxide
Classification or Family	Dielectric materials, Capacitors, FETs, Perovskite interlayer materials, Perovskite solar cells

Product Details

Purity	99.9%
Particles Size	100 – 200 nm
Appearance	Off-white powder

MSDS Documentation

Tantalum (V) Oxide Powder MSDS Sheet

References

Implementation of low-power electronic devices using solution-process tantalum pentoxide dielectric, J. Heo et al., 28 (18), 1704215 (2018); DOI: 10.1002/adfm.201704215.
Review of anodic tantalum oxide nanostructures: from morphological design to emerging applications, B. Mohapatra et al., ACS Appl. Nano Mater., 7, 13865–13892 (2024); DOI: 10.1021/acsanm.4c02000.
Interface engineering of mesoscopic perovskite solar cells by atomic layer deposition of Ta₂O₅, R. Chavan et al., ACS Appl. Energy Mater., 4 (10), 10433–10441 (2021); DOI: 10.1021/acsaem.1c00367.

Tantalum oxide nanosheets/polypropylene composite separator constructing lithium‑ion channels for stable lithium metal batteries, L. Chen et al., Adv. Compos. Hybrid Mater., 6, 12 (2023); DOI: 10.1007/s42114-022-00589-x.
Tantalum oxide/silicon nitride: a negatively charged surface passivation stack for silicon solar cells, Y. Mao et al., Appl. Phys. Lett., 106, 201601 (2015); DOI: 10.1063/1.4921416.
Electrolytic micro-capacitors based on tantalum films for high voltage applications, C. Teyssedou et al., Adv. Mater. Technol., 9, 2400682 (2024); DOI: 10.1002/admt.202400682.
Recent advancements of niobium and tantalum-based materials: from design engineering to energy storage applications, Y. Worku et al., ChemistrySelect, 10, e202405649 (2025); DOI: 10.1002/slct.202405649.

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