Hafnium Disulfide Powder and Crystal


Order Code: M2152C1
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Low price, high purity 2D hafnium disulfide powder and crystals

For the development of next-generation electronics, optoelectronics, and nanotechnology

Hafnium disulfide (HfS2) is another layered 2D semiconducting material that is part of the group IV transition metal dichalcogenides (TMDCs). Hafnium disulfide is a semiconductor with an indirect band gap of ~ 2.0 eV. Single layers of HfS2 are predicted to have a direct band gap of ~1.2 eV. 

Hafnium disulfide (HfS2) powder has a layered structure. Each layer is bound by weak van der Waals forces. Ultra-thin films of HfS2 can be chemically-exfoliated from its layered bulk powder form. HfScrystallises with octahedral metal coordination in the 1T polytype. 1T-HfSis semiconducting in nature. Ultrathin HfS2 shows a higher, faster response and higher stability than most other two-dimensional materials. However, the 1T-HfS2 monolayer system undergoes a semiconductor-to-metal transition while compressive strain is applied.

We supply low price hafnium disulfide in several different forms for a range of applications.

Hafnium disulfide powder

Hafnium Disulfide powder

Can be used for preparation of hafnium Disulfide nanoplates nano-platelets and ultrathinthin films

Available in quantities of 1g

≥ 99.995% purity

From £269.00

Hafnium disulfide crystals by size

Hafnium disulfide crystal

Can be used to produce single or few-layer hafnium disulfide sheets via mechanical or liquid exfoliation

Small (≥10mm2) or medium (≥25mm2) crystals available*

≥ 99.999% purity

From £396.00

*Typical representative size, areas/dimensions may vary.

Bulk single hafnium disulfide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation. Single hafnium disulfide crystal or films produced from such crystals are suitable for study using atomic force microscopy or transmission electron microscopy.

Few-layer HfS2 nanosheets and nanoparticles can also obtained from hafnium disulfide powder by liquid-exfoliation.

Key Product Data

  • High purity hafnium disulfide suitable for a range of applications
  • Available in powdered form or in crystal form by weight or size
  • Low price with free worldwide shipping on qualifying orders

Structure and Properties

After exfoliation of hafnium disulfide crystal or powder, hafnium disulfide typically has the following properties:

  • ‎Octahedral (1T, space group: P3m1)
  • Group IV transition metal dichalcogenides (TMDCs)
  • Hafnium disulfide is a semiconductor with an indirect band gap of ~ 2.0 eV. Single layers of HfS2 are predicted to have a direct band gap of ~1.2 eV
  • 1T-HfSis semiconducting in nature
  • 1T-HfS2 monolayer system undergoes a semiconductor-to-metal transition while compressive strain is applied

Applications

Hafnium disulfide (HfS2) single crystals can be used to prepare monolayer and few-layer HfS2 by mechanical or liquid exfoliation. 

Hafnium disulfide powder is suitable for liquid chemical exfoliation to prepare HfS2 nanosheets and nanoparticles down to few-layer films.

Hafnium disulfide based field-effect transistors (FETs) can have sheet current densities of up to 650 μA μm−1 (about 85 times higher than that of MoS2), making HfS2 an attractive candidate for applications in logic and optoelectronic devices. Exfoliated few-layer HfS2 has also been built into ultra-sensitive photo-transistors and high-performance FETs.

Exfoliated ultra-thin films of HfShave an indirect bandgap of ~ 1.2 eV, with high stability against surface degradation. FET based on HfSnanosheets gave a high current on/off ratio over 10,000 at room temperature. Photodetectors based on HfSnanosheets provide high photosensitivity to 405 nm lasers, with a large on/off ratio of ca. 103 and ultrafast response performance (with rise and fall times of 24 ms).

2D-HfS2 can also be used as an efficient photocatalyst for water splitting, with a strong absorption mainly in the visible and ultraviolet regions. 

Technical Data

CAS number ‎18855-94-2
Chemical formula HfS2
Molecular weight 242.62 g/mol
Bandgap ~ 2.0 eV (indirect); ~ 1.2 eV (direct)
Preparation Synthetic - Chemical Vapour Transport (CVT)
Structure ‎Octahedral (1T)
Electronic properties 2D Semiconductor
Melting point No data available
Colour Dark brown
Synonyms Hafnium sulfide
Classification / Family Transition metal dichalcogenides (TMDCs), 2D Semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science

Product Details

Form Purity

Hafnium Disulfide Powder

≥ 99.995%
Hafnium Disulfide Crystal ≥ 99.999%

MSDS Documents

Hafnium disulfide powder MSDSHafnium disulfide powder

Hafnium disulfide crystal MSDSHafnium disulfide crystal

Structure of Hafnium Disulfide

Hafnium disulfide (HfS2) adopts the CdI2 structure (1T structure) with a single-layer plane of hexagonal close-packed Hf atoms sandwiched by two-layer planes of hexagonal close-packed S atoms. The layers are stacked together by weak van der Waals (vdW) interactions, and can be exfoliated into thin 2D layers.

hafnium sulfide - HfS2 - crystal structure
The crystal structure of single-layer hafnium disulfide (HfS2)

Applications of Hafnium Disulfide

Hafnium disulfide based field-effect transistors (FETs) can have sheet current densities of up to 650 μA μm−1 (about 85 times higher than that of MoS2), making HfS2 an attractive candidate for applications in logic and optoelectronic devices. Exfoliated few-layer HfS2 has also been built into ultra-sensitive photo-transistors and high-performance FETs.

Exfoliated ultra-thin films of HfShave an indirect bandgap of ~ 1.2 eV, with high stability against surface degradation. FET based on HfSnanosheets gave a high current on/off ratio over 10,000 at room temperature. Photodetectors based on HfSnanosheets provide high photosensitivity to 405 nm lasers, with a large on/off ratio of ca. 103 and ultrafast response performance (with rise and fall times of 24 ms).

2D-HfS2 can also be used as an efficient photocatalyst for water splitting, with a strong absorption mainly in the visible and ultraviolet regions. 

Pricing Table (All)

Form Size/Weight* Product Code Price
Powder 1 g M2152C1 £269.00
Crystal Small (≥ 10 mm2) M2152A10 £396.00 ea.

*typical representative size, areas/dimensions may vary.

Shipping is free for qualifying orders.

Literature and Reviews

  1. Selective Direct Growth of Atomic Layered HfS2 on Hexagonal Boron Nitride for High Performance Photodetectors, D. Wang et al., Chem. Mater.,30, 3819−3826 (2018); DOI: 10.1021/acs.chemmater.8b01091.
  2. Impact of Metal Contacts on the Performance of Multilayer HfS2 Field-Effect Transistors, X. Nie et al., ACS Appl. Mater. Interfaces, 9, 26996−27003 (2017); DOI: 10.1021/acsami.7b06160.
  3. 2D-HfS2 as an efficient photocatalyst for water splitting, D. Singh et al., Catal. Sci. Technol., 6, 6605–6614 (2016); DOI: 10.1039/c6cy01172a.
  4. Efficient charge separation and visible-light response in bilayer HfS2-based van der Waals heterostructures, B. Wang et al., RSC Adv., 8, 18889 (2018); DOI: 10.1039/c8ra03047b.
  5. Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors, L. Fu et al., Adv. Mater., 29, 1700439 (2017); DOI: 10.1002/adma.201700439.
  6. Valence and conduction band states of HfS2: From bulk to a single layer, C. Kreis et al., Phys. Rev. B, 68, 235331 ~2003!; DOI: 10.1103/PhysRevB.68.235331.
  7. High-yield synthesis and liquid-exfoliation of twodimensional belt-like hafnium disulphide, H. Kaur et al., Nano Res., 11(1): 343–353 (2018); doi: 10.1007/s12274-017-163.
  8. Vertically oriented few-layered HfS2 nanosheets: growth mechanism and optical properties, B. Zheng et al., 2D Mater., 3, 035024 (2016); doi:10.1088/2053-1583/3/3/035024.
  9. Efficient charge separation and visible-light response in bilayer HfS2-based van der Waals heterostructures, B. Wang et al., RSC Adv., 8, 18889 (2018); DOI: 10.1039/c8ra03047b.
  10. Few-layer HfS2 transistors, T. Kanazawa et al., Sci. Rep., 6, 22277 (2015); DOI: 10.1038/srep22277.
  11. Ultrasensitive Phototransistors Based on Few-Layered HfS2, K. Xu et al., Adv. Mater., 27, 7881–7887 (2015); DOI: 10.1002/adma.201503864.
  12. Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering, K. Xu et al., small, 12 (23), 3106–3111 (2016); DOI: 10.1002/smll.201600521.
  13. Space-Confined Chemical Vapor Deposition Synthesis of Ultrathin HfS2 Flakes for Optoelectronic Application, C. Yan et al., Adv. Funct. Mater., 27, 1702918 (2017); DOI: 10.1002/adfm.201702918.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.