Molybdenum Disulfide Crystal

Not in stock (price excludes taxes)
Order Code: M2107A10


Size Product code Size description* Quantity (EA) Price
Small M2107A10 10 mm*10 mm 1 £356.5
Medium M2107A15 15 mm*15 mm 1 £636.8
Large** M2107A20 20 mm*20 mm 1 £860.8

*typical representative size, areas/dimensions may vary

**item with a lead time of 2-3 weeks, please contact for more information

General Information

CAS number 1317-33-5
Chemical formula MoS2
Molecular weight 160.07 g/mol
Bandgap 1.23 eV [1]
Synonyms Molybdenum sulfide, Molybdenum disulphide. Molybdenum (IV) sulfide
Classification / Family Transition metal dichalcogenides (TMDCs), 2D Semiconductor Materials, Nano-electronics, Nano-photonics, Materials science

Product Details

Form Single Crystal
Preparation Synthetic - Chemical Vapour Transport (CVT)
Purity ≥ 99.999%
Structure Hexagonal
Electronic properties 2D Semiconductor
Melting point 2375 °C (lit.)
Colour Black / Dark brown


General Description 

Molybdenum Disulfide (MoS2) is a member of the transition metal dichalcogenides (TMDC) family. Due to its natural availability as molybdenite, it is one of the most studied and celebrated TMDCs.

Like graphene, MoS2 has a similar two-dimensional layered structure - with each individual layer stacked upon each other to form the bulk single crystal. Each layer of MoS2 is composed of a plane of hexagonally-arranged molybdenum atoms, positioned between two planes of hexagonally-arranged sulfur atoms. Like graphite, each layer is bound are bound by weak van der Waals forces. Because of this, it is possible to obtain monolayer to few-layer crystal flakes from a bulk crystal via mechanical exfoliation (using scotch tape).

Molybdenum Disulfide Crystal structure and product image
The hexagonal structure of Molybdenum Disulfide (MoS2).


MoShas an indirect band-gap of 1.23 eV for bulk single crystal or multi-layer films. However, single atomic layers have a direct band-gap of 1.9 eV. Due to its layered structure, MoS2 is highly anisotropic with excellent nonlinear optical properties. It is widely used as a high-performance lubricant.

As a result of its direct band-gap, single-layer MoS2 has received much interest for applications in electronic and optoelectronic devices (such as transistors, photodetectors, photovoltaics and light-emitting diodes). It is also being explored for applications in photonics, and can be combined with other TMDCs to create advanced heterostructured devices.


Molybdenum disulfide MoSis manufactured via chemical vapour transport (CVT) crystallisation, with purities of over 99.999% achieved.


Molybdenum disulfide MoS2 is used to create monolayer and few-layer MoS2 by mechanical or liquid exfoliation. Single crystals can also be studied using a range of microscopies (including AFM and TEM).

Further information

More information on the properties, applications, processing and range of products available for molybdenum disulfide (MoS2) is described here.

Literature and Reviews

  1. Few-Layer MoS2: A Promising Layered Semiconductor, R. Ganatra et al., ACS Nano, 8 (5), 4074–4099 (2014); DOI: 10.1021/nn405938z.
  2. Atomically Thin MoS2: A New Direct-Gap Semiconductor, K. Mak et al., Phys. Rev. Lett. 105, 136805 (2015); DOI: 10.1103/PhysRevLett.105.136805.
  3. Shape-Uniform, High-Quality Monolayered MoS2 Crystals for Gate-Tunable Photoluminescence, X. Zhang et al., ACS Appl. Mater. Interfaces, 9, 42121−42130 (2017); DOI: 10.1021/acsami.7b14189.
  4. Photoluminescence from Chemically Exfoliated MoS2, G. Eda et al., Nano Lett., 11, 5111–5116 (2011); DOI: 10.1021/nl201874w.
  5. Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature, H. Li et al, Small, 8 (1), 63–67 (2012); DOI: 10.1002/smll.201101016.