BN-CP1

Green Dopant Materials, High Purity Sublimed Materials, Materials, MR-TADF Materials, OLED Materials, Semiconducting Molecules, TADF Materials

MSDS

Highly Efficient MR-TADF Green Emitter

High purity MR-TADF with CzBN core, sublimed ≥99%

Specifications | MSDS | Literature and Reviews

BN-CP1 is a highly efficient MR-TADF green emitter with a maximum external quantum efficiency (EQE_max) up to 40.0% and full width at half maximum (FWHM) of 25 nm. BN-CP1 has an indolo[3,2,1-de]indolo[3',2',1':8,1][1,4]benzazaborino[2,3,4-kl]phenazaborine (Cz-BN) core with four peripheral bulky tert-butyl groups, and 2,3-carbazolylphenyl attached to the CzBN core opposite to the boron atom. The unique three-dimensional geometry and steric effect created by the tert-butyl and neighbouring two carbazolyl groups are favourable for suppressing chromophore interactions such as the aggregation-caused-quenching (ACQ). This is manifested by the minor change of FWHM from 25 to 26 nm upon increasing the doping concentration from 1 to 30 wt.% in DMIC-TRZ film.

BN-CP1 can also be considered as a derivative of DtBuCzB. OLED device based on BN-CP1 as the emitter and DMIC-TRZ as the host demonstrates an unchanged electroluminescence λ_em of 496 nm and FWHM of 25 nm, and a smaller decrease of EQE_max from 40.0 to 33.3% as the doping concentration increased from 5 to 30 wt.%. BN-CP1 is a good example of doping-insensitive MR-TADF material with great electroluminescence efficiency and colour purity.

General Information

CAS Number	N/A
Chemical Formula	C₇₆H₆₇BN₄
Molecular Weight	1047.18 g/mol
Absorption	λ_max 475 nm (in Toluene)
Photoluminescence	λ_em 490 nm (in Toluene)
HOMO/LUMO	HOMO = - 5.30 eV, LUMO = - 2.78 eV
Synonyms	BN-CP1
Classification or Family	Indolo[3,2,1-de]indolo[3',2',1':8,1][1,4]benzazaborino[2,3,4-kl]phenazaborine (CzBN) derivative, Triphenylboron, MR-TADF green emitter, Sublimed materials

Product Details

Purity	Sublimed ≥99%
Melting point	DSC: T_g = 500 °C
Appearance	Light-yellow to yellow powder/crystals

Chemical Structure

Device Structure(s)

Device Structure	ITO/HAT-CN (5 nm)/TAPC (30 nm)/TCTA (15 nm)/mCBP (10 nm)/5 wt.% BN-CP1:DMIC-TRZ (40 nm)/PO-T2T (20 nm)/ANT-BIZ (30 nm)/Liq (2 nm)/Al (100 nm) [1]
Color	Green light emission at 496 nm
CIE Coordinates	(0.09, 0.50)
FWHM	25
Turn-on Voltage (V_on)	2.4 eV
Max Luminance	54,753 cd m^-2
Max Current Efficiency	83.8 cd A^-1
Max Power Efficiency	109.7 lm W^-1
Max EQE	40.0%

Device Structure	ITO/HAT-CN (5 nm)/TAPC (30 nm)/TCTA (15 nm)/mCBP (10 nm)/15 wt.% BN-CP1:DMIC-TRZ (40 nm)/PO-T2T (20 nm)/ANT-BIZ (30 nm)/Liq (2 nm)/Al (100 nm) [1]
Color	Green light emission at 496 nm
CIE Coordinates	(0.09, 0.50)
FWHM	25
Turn-on Voltage (V_on)	2.4 eV
Max Luminance	45,313 cd m^-2
Max Current Efficiency	80.5 cd A^-1
Max Power Efficiency	105.3 lm W^-1
Max EQE	37.5%

MSDS Documentation

BN-CP1 MSDS Sheet

Literature and Reviews

P. Jiang et al. (2022); Quenching-Resistant Multiresonance TADF Emitter Realizes 40% External Quantum Efficiency in Narrowband Electroluminescence at High Doping Level, Adv. Mater., 34 (3), 2106954; DOI: 10.1002/adma.202106954.
N. Li et al. (2023); Versatile Host Materials for Both D–A-Type and Multi-Resonance TADF Emitters toward Solution-Processed OLEDs with Nearly 30% EQE, Adv. Mater., 35 (28), 2300510; DOI: 10.1002/adma.202300510.