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Product Code M811-500mg
Price £310 ex. VAT

TAPC, hole transport material for OLEDs

High hole mobility and can be used to simplify OLED structures


1,1-Bis[(di-4-tolylamino)phenyl]cyclohexane, known as TAPC, has been widely used as a hole transport material in organic light-emitting diodes (OLEDs) due to its high hole mobility.

Having a higher ET (2.87 eV) than the typical blue phosphorescent guest material, TAPC can be used as both hole-transport layer material and as host for blue phosphorescent (such as FIrpic) guest molecules, resulting in a reduction of the number of organic layers and simplified OLED structures.

General Information


CAS number 58473-78-2
Chemical formula C46H46N2
Molecular weight 626.87 g/mol
Absorption λmax 305 nm (in THF)
Fluorescence λem 414 nm (in THF)
HOMO/LUMO HOMO = 5.5 eV, LUMO = 2.0 eV
Synonyms
  • 4,4′-Cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine]
  • 1,1-Bis[(di-4-tolylamino)phenyl]cyclohexane
Classification / Family Triphenylamine derivatives, Hole-injection layer (HIL) materials, Hole transport layer (HTL) materials, Electron blocking layer (EIL) materials, Phosphorescent host materials, Thermally-activated delayed fluorescence (TADF) materials, Organic light-emitting diodes (OLEDs), Organic electronics

Product Details


Purity

>99.5% (sublimed*)

>98.0% (unsublimed)

Melting point 186 °C (lit.)
Appearance White powder/crystals

*For more details about sublimation, please refer to the Sublimed Materials.

Chemical Structure


Chemical structure of TAPC
Chemical structure of 1,1-Bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC)

Device Structure(s)


Device structure ITO(50 nm)/PEDOT:PSS(60 nm)/TAPC(20 nm)/mCP(10 nm)/mCP:BmPyPb*:4CzIPN(25 nm)/TSPO1(35 nm)/LiF(1 nm)/Al(200 nm) [1]
Colour Green green light emitting device
Max. EQE 28.6%
Max. Power Efficiency 56.6 lm W1
Device structure ITO/TAPC (40 nm)/TCTA (2 nm)/26DCzPPy:TCTA:FIrpic (0.4:0.4:0.2) (5 nm)/26DCzPPy:PPT:FIrpic (0.4:0.4:0.2) (5 nm)/3TPYMB (55 nm)/CsF (2 nm)/Al (180 nm) [2]
Colour Blue blue light emitting device
Current Efficiency @ 1000 cd/m2 42 cd/A
Power Efficiency @ 1000 cd/m2 30 lm W1

Device structure

ITO/TAPC:MoOx (10 nm, 15 wt.%)/TAPC(35 nm)/TcTa:Ir(BT)2(acac) (5 nm, 4 wt.%)/26DCzPPy:FIrpic (5 nm, 15 wt.%)/26DCzPPy:Ir(BT)2(acac) (5 nm, 4 wt.%)/BPhen (40 nm)/Cs2CO3 (1 nm)/Al (100 nm) [3]
Colour White white light emitting device
Max. EQE 13.2%
Max. Current Efficiency 35.0 cd/A
Max. Power Efficiency 30.6 lm W1

Device structure

Si/SiO2/Al (80 nm)/MoOx: TAPC (43 nm, 15 wt.%)/TAPC (10 nm)/Ir(piq)3:TcTa (3 nm, 6%)/TcTa (2 nm)/FIrpic:26DCzPPy (5 nm, 12 wt.%)/BPhen (2 nm)/PO-01*:26DCzPPy (5 nm, 6 wt.%)/BPhen (40 nm)/Cs2CO3 (1 nm)/Al (2 nm)/Cu (18 nm)/TcTa (60 nm) [4]
Colour White white light emitting device
EQE @ 1000 cd/m2 10%
Current Efficiency @ 1000 cd/m2 25.6 cd/A
Power Efficiency @ 1000 cd/m2 20.1 lm W1
Device structure ITO (90 nm)/HATCN (5 nm)/TAPC (65 nm)/10 wt% fac -Ir(mpim)3 –doped TCTA (5 nm)/10 wt% fac -Ir(mpim)3 -doped 26DCzPPy (5 nm)/B3PyPB* (65 nm)/Liq (2 nm)/Al (80 nm) [5]
Colour Blue blue light emitting device
EQE @ 100 cd/m2 29.6%
Current Efficiency @ 100 cd/m2 73.2 cd/A
Power Efficiency @ 100 cd/m2 75.6 lm W1
Device structure ITO/TAPC (40 nm)/TcTa (10 nm)/5a* (4%):TcTa (5 nm)/5a* (4%):26DCzPPy (10 nm)/TmPyPB (40 nm)/LiF(1 nm)/Al(100 nm) [6]
Colour Red red light emitting device
Max. Luminance 11,023 cd/m2
Max. Current Efficiency 17.36 cd/A
Max. Power Efficiency 14.73 lm W1
Device structure ITO /TAPC/(1wt% DPB:99wt%tri-PXZ-TRZ*):CBP (15:85)/LiF/Al [7]
Colour Red red light emitting device
Max EQE 17.5%
Max. Power Efficiency 28 lm W1
Device structure ITO (180 nm)/TAPC (60 nm)/mCP:Firpic–8 wt% (10 nm)/Ir(ppz)3 (1.5 nm)/mCP:Firpic–8 wt% (10 nm)/Ir(ppz)3 (1.5 nm)/mCP:Firpic–8 wt% (10 nm)/TPBi (30 nm)/Liq (2 nm)/Al (120 nm) [8]
Colour Blue blue light emitting device
Luminance @ 200 cd/m2 32,570 cd/m2
Max. Current Efficiency 43.76 cd/A
Max. EQE 23.4%
Max. Power Efficiency 21.4 lm W−1
Device structure ITO/TAPC (50 nm)/TcTa:FIrpic (7%,10 nm)/26DCzPPy:FIrpic (20%, 10 nm)/Tm3PyPB (20 nm)/Tm3PyPB:Cs (30 nm)/LiF (1 nm)/Al (120 nm) [9]
Colour Blue blue light emitting device
Max. EQE 20.3%
Max. Power Efficiency 36.7 lm W−1
Device structure ITO/MoO3 (8 nm)/(NPB)(80 nm)/TAPC(5 nm)/TCTA:4 wt% Ir(MDQ)2(acac) (4 nm)/TCTA:2 wt% Ir(ppy)3 (4 nm)/43 wt% TCTA: 43 wt% 26DCzPPy: 14 wt% FIrpic (5 nm)/TmPyPb (40 nm)/LiF/Al [10]
Colour White white light emitting device
Max. EQE 19.4%
Max. Current Efficiency 43.6 cd/A
Max. Power Efficiency 45.8 lm W−1
Device structure ITO/PEDOT:PSS(40 nm)/TCTA:TAPC:FIrpic:Ir(ppy)3:Ir(MDQ)2(acac) (40nm)/TmPyPB (50 nm)/LiF (1 nm)/Al [11]
Colour White white light emitting device
Max. Current Efficiency 37.1 cd/A
Max. Power Efficiency 32.1 lm W−1
Device structure ITO/HAT-CN (10 nm)/HAT-CN:TAPc (2:1, 60 nm)/TAPc (20 nm)/TcTa:Be(pp)2:Ir(mppy)3 (1:1:8 wt% 10 nm)/Be(pp)2:Liq (1:10%, 35 nm)/Liq (1 nm)/Al (1 nm)/HAT-CN (20 nm)/HAT-CN:TAPc (2:1, 10 nm)/TAPc (40 nm)/ TcTa:Be(pp)2:Ir(mppy)3 (1:1:8 wt% 10 nm)/Be(pp)2 (15 nm)/Be(pp)2:Liq (1:10%, 35 nm)/Liq (1 nm)/Al (100 nm) [12]
Colour Green green light emitting device
Max. Current Efficiency 241 cd/A
Max. Power Efficiency 143 lm W1
Device structure ITO/HAT-CN (10 nm)/TAPC (45 nm)/BCzSCN*:FIrpic:PO-01 (8 wt%, 0.5 wt%, 20 nm)/TmPyPB (50 nm)/Liq (2 nm)/Al (120 nm) [13]
Colour Blue blue light emitting device
Max. EQE 22%
Max. Current Efficiency 66.0 cd/A
Max. Power Efficiency 64.0 lm W1
Device structure ITO/HAT-CN (10 nm)/TAPC (45 nm)/mCP:Ir(dbi)3 10 wt% (20 nm)/TmPyPB (40 nm)/Liq (2 nm)/Al (120 nm) [14]
Colour Sky Blue blue light emitting device
Max. EQE 23.1%
Max. Current Efficiency 61.5 cd/A
Max. Power Efficiency 43.7 lm W1
Device structure Graphene (2–3 nm)/TAPC (30 nm)/HAT-CN (10 nm)/TAPC (30 nm)/HAT-CN (10 nm)/TAPC (30 nm)/ TCTA:FIrpic (5 nm)/DCzPPy: FIrpic (5 nm)/BmPyPB (40 nm)/LiF (1 nm)/Al (100 nm) [15]
Colour Blue blue light emitting device
Max. EQE 15.1%
Max. Power Efficiency 14.5 lm W1
Device structure ITO/TAPC (40 nm)/TCTA:Ir(piq)3 2 wt % (1 nm)/TCTA 46 wt %:BP4mPy 46 wt %: FIrpic 8 wt % (28 nm)/BP4mPy:Ir(piq)3 3 wt % (1 nm)/BP4mPy (40 nm)/LiF (0.8 nm)/Al (150 nm) [16]
Colour White white light emitting device
Max. Luminance 19,007 cd/m2
Max EQE 11.3%
Max. Current Efficiency 15.6 cd/A
Max. Power Efficiency 16.3 lm W1

*For chemical structure information please refer to the cited references

Pricing


Grade Order Code Quantity Price
Sublimed (>99.5%) M811 500 mg £310
Sublimed (>99.5%) M811 1 g £480
Unsublimed (>98.0%) M812 1 g £300

MSDS Documentation


TAPC MSDSTAPC MSDS sheet

Literature and Reviews


  1. Engineering of Mixed Host for High External Quantum Efficiency above 25% in Green Thermally Activated Delayed Fluorescence Device, B. Kim et al., Adv. Funct. Mater., 24, 3970–3977 (2014).
  2. Blue and white phosphorescent organic light emittingdiode performance improvementbyconfining electrons and holes inside double emitting layers, Y-S.Tsai et al., J. Luminescence 153, 312–316 (2014); http://dx.doi.org/10.1016/j.jlumin.2014.03.040.
  3. Color stable and low driving voltage white organic light-emitting diodes with low efficiency roll-off achieved by selective hole transport buffer layers, Z. Zhang et al., Org. Electronics 13, 2296–2300 (2012); http://dx.doi.org/10.1016/j.orgel.2012.07.001.
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