FREE shipping on qualifying orders when you spend or more. All prices ex. VAT. Enjoy hassle-free delivery, fulfilled by our EU subsidiary. Backed by our 50 State Delivery Guarantee. Regional distributors also available. Sorry, we are unable to accept orders from or ship to .

It looks like you are using an unsupported browser. You can still place orders by emailing us on info@ossila.com, but you may experience issues browsing our website. Please consider upgrading to a modern browser for better security and an improved browsing experience.

Source-Drain Deposition Mask, High Density

Substrates and Fabrication

Product Code E321
Price $34 ex. VAT

For High Quality deposition of source-drain contacts

Produce 20 OFETs on a single substrate


Overview | Specifications | Resources


Shadow masks for deposition of source-drain contacts. Designed for use in the Evaporation Stack for High Density OFETs with our standard sized substrates of 20 x 15 mm. Each mask produces 20 OFETs on a single substrate. We sell a selection of masks for different precisions in linear and interdigitated patterns.

If you would like to mix and match geometries, please contact us.

General Mask Specifications


Mask dimensions 20 x 15 mm
Number of OFETs 20
Contact pad size 1 mm x 1 mm
Contact pitch 2.54 mm (0.1")
Mask material Electroformed nickel
Compatible products

Evaporation stack

Glass Substrates

ITO substrates

Silicon substrates

Individual Mask Specifications


Product Code E321 E322 E323
Channel Geometry Linear Linear Interdigitated
Channel Width 1 mm 1 mm 18.23 mm
Channel Length 30 µm 30, 40, 50, 60, 80 µm (4 of each) 50 µm
Tolerance ± 7 µm ± 7 µm ± 7 µm
Mask Thickness 30 µm 30 µm 30 µm

Troubleshooting


The mask is designed in such a way that during the deposition of the gate electrodes on the corner of the substrate the metal should cover the edge of the substrate as well. This ensures conductivity between the metal electrodes and the p-doped silicon. If you find the edges of the substrate not to be conductive you must scratch the edges of the substrate to remove the insulating silicon oxide in correspondence with the corner where the gate electrode will be deposited.

Prefabricated OFET: gate electrode details
Prefabricated OFET: details of the gate pad/doped silicon electrical contact.

B-Grade Masks


Masks with one channel that falls outside of our quality standards are listed as B-Grade. The other 19 channels on these masks are of the same standard as on our A-Grade masks. It is possible that the substandard channel may produce a working device, however this cannot be guaranteed. Therefore, these B-Grade masks are offered at a discounted price.

Resources and Support


How to load the High density OFET stack

This video demonstrates how to load the high density OFET stack typically used to thermally evaporate (vacuum deposit) source-drain contacts. The video shows how to carefully place the evaporation masks into the substrate holder.

Learn more...
Return to the top