Source-Drain Deposition Masks for High Density OFETs

Order Code: E321

Price

(excluding Taxes)

£16.60


Shadow masks for deposition of source-drain contacts. Designed for use in the high density evaporation stack with our standard sized substrates of 20 x 15 mm. Each mask produces 20 OFETs on a single substrate. We sell a selection of masks for different precisions in linear and interdigitated patterns.

Medium Precision
E321 - Linear 1 mm x 30 µm
E322 - Linear 1 mm x 30 µm variable
E323 - Interdigitated 18 mm x 50 µm
High Precision Linear
E324 - Linear 1 mm x 10 um (contact us for availability)
E325 - Linear 1 mm x 10 µm variable
High Precision Interdigitated
E329 - Interdigitated 4 mm x 20 µm

If you would like to mix and match geometries, please let us know when ordering.

 

 Overall Mask Specifications

Mask dimensions 20 x 15 mm
Number of OFETs 20
Contact pad size 1 mm x 1 mm
Contact pitch 2.54 mm (0.1")
Mask material Hard electroformed nickel
Compatible products E311, E331, E332, E341(active area), E351(insulator)

 Individual Mask Specifications

Product Code E321 E322 E323 E324 E325 E329
Channel Geometry Linear Linear Inter-digitated Linear Linear Inter-digitated
Arrangement 20 Identical OFETs 5 Channel Lengths (4 of each) 20 Identical OFETs 20 Identical OFETs 5 Channel Lengths(4 of each) 20 Identical OFETs
Channel Width 1 mm 1 mm 18.23 mm 1 mm 1 mm 4.03 mm
Channel Length 30 um 30, 40, 50, 60, 80 µm 50 µm 10 µm 10, 15, 20, 25, 30 µm 20 µm
Bend Radius - - - - - 20 µm
Tolerance ± 7 µm ± 7 µm ± 7 µm ± ± 2 µm ± 2 µm
Mask Thickness 30 µm 30 µm 30 µm 8 µm 8 µm 8 µm
End Flair Length - - - - - 1.98%

Medium Precision High Density OFET Source-Drain Shadow Mask E321- E323

E321 Linear 1 mm x 30 µm

E322 Linear 1 mm x 30 µm variable

Substrate overview

E323 Interdigitated 18 mm x 50 µm

High Precision Linear High Density OFET Source-Drain Shadow Mask E324 - E326

E324 Linear 1 mm x 10 µm

E325 Linear 1 mm x 10 µm variable

Substrate Overview

High Precision Interdigitated High Density OFET Source-Drain Shadow Mask E329

E329 Interdigitated 4 mm x 20 µm

Substrate overview

Assembly Video

 

Troubleshooting

The mask is designed in such a way that during the deposition of the gate electrodes on the corner of the substrate the metal should cover the edge of the substrate as well. This ensures conductivity between the metal electrodes and the p-doped silicon. If you find the edges of the substrate not to be conductive you must scratch the edges of the substrate to remove the insulating silicon oxide in correspondence with the corner where the gate electrode will be deposited.

Prefabricated OFET: gate electrode details
Prefabricated OFET: details of the gate pad/doped silicon electrical contact.

 

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.