Shadow masks for deposition of source-drain contacts. Designed for use in the high density evaporation stack with our standard sized substrates of 20 x 15 mm. Each mask produces 20 OFETs on a single substrate. We sell a selection of masks for different precisions in linear and interdigitated patterns.
- Medium Precision
- E321 - Linear 1 mm x 30 µm
- E322 - Linear 1 mm x 30 µm variable
- E323 - Interdigitated 18 mm x 50 µm
- High Precision Linear - No longer available due to manufacturing tolerances
- E324 - Linear 1 mm x 10 um
- E325 - Linear 1 mm x 10 µm variable
- High Precision Interdigitated
- E329 - Interdigitated 4 mm x 20 µm
If you would like to mix and match geometries, please let us know when ordering.
General Mask Specifications
|Mask dimensions||20 x 15 mm|
|Number of OFETs||20|
|Contact pad size||1 mm x 1 mm|
|Contact pitch||2.54 mm (0.1")|
|Mask material||Hard electroformed nickel|
|Compatible products||Evaporation stack: E311
Masks: E336 (Gate) E338/E339 (active area), E3310 (insulator)
Glass Substrates: S151
ITO substrates: S111
Silicon substrates: S146
Individual Mask Specifications
|Channel Width||1 mm||1 mm||18.23 mm||1 mm||1 mm||4.03 mm|
|Channel Length||30 um||30, 40, 50, 60, 80 µm (4 of each)||50 µm||10 µm||10, 15, 20, 25, 30 µm (4 of each)||20 µm|
|Tolerance||± 7 µm||± 7 µm||± 7 µm||± 2 µm||± 2 µm||± 2 µm|
|Mask Thickness||30 µm||30 µm||30 µm||8 µm||8 µm||8 µm|
Medium Precision High-Density OFET Source-Drain Shadow Mask (E321- E323)
Linear 1 mm x 30 µm (E321) and 1 mm x 30 µm variable (E322)
Interdigitated 18 mm x 50 µm (E323)
High Precision Linear High Density OFET Source-Drain Shadow Mask (E324 - E326)
Linear 1 mm x 10 µm (E324) and 1 mm x 10 µm variable (E325)
These masks are no longer available because our industrial manufacturer can no longer produce masks of this thickness to this precision with a reliable yield.
High Precision Interdigitated High-Density OFET Source-Drain Shadow Mask (E329)
Interdigitated 4 mm x 20 µm (E329)
- Bend Radius - 20 µm
- End Flair Length - 1.98%
The mask is designed in such a way that during the deposition of the gate electrodes on the corner of the substrate the metal should cover the edge of the substrate as well. This ensures conductivity between the metal electrodes and the p-doped silicon. If you find the edges of the substrate not to be conductive you must scratch the edges of the substrate to remove the insulating silicon oxide in correspondence with the corner where the gate electrode will be deposited.
To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.