The evaporation stack holds the source-drain shadow masks and substrates in close contact for thermal evaporation. This is crucial for effective device fabrication as the source-drain channel is usually the most critical feature on an OFET. For use with the high density OFET source-drain evaporation masks. We have recently updated the High Density OFET Evaporation Stack. The new design holds 10 substrates in a radial layout to reduce shadowing effects.
The key component is the lower support, which is milled from a solid block of aluminium to provide high-precision recesses for twelve individual masks and substrates and allows mixing-and-matching of shadow masks within a single evaporation. For use with the high-density OFET source-drain evaporation masks (sold separately).
The diagram below shows an deconstructed view of how the evaporation stack fits together. At the base of the system is the lower support, which prevents the thin and flexible shadow masks from warping. This support has recesses in which individual masks are placed with a substrate above. A low strength magnetic sheet is placed on to pull the shadow mask in close contact with the substrates. Finally, the lid is used to bolt everything together into a mechanically stable system that can be mounted in a deposition system at any orientation.
Holds the substrates and magnetic sheet in position
Up to ten substrates per mask (sold separately)
Mix and Match OFET geometries within the same evaporation with 20 OFETs per substrate
Combined Lower Support and Substrate Holder
Milled from a single piece of aluminium to provide mechanical support for the interchangeable masks and align the substrates
|Size||75 mm x 75 mm|
|Thickness||2 mm (exc. bolts)|
|Material||Aluminium & stainless stee|
|Substrate capacity||10 substrates|
To the best of our knowledge, the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.