Silicon Oxide Substrates and Wafers
Pre-oxidised and Pre-diced
standardised substrate size of 15 mm x 20 mm
Silicon substrates designed for use in organic electronics labs as FET substrates, and other applications including X-ray studies, surface microscopy analysis and elipsometry measurements. Sold on 200 mm wafer mounts, pre-oxidised and pre-diced to our standardised substrate size of 15 mm x 20 mm with no photoresist coating, these substrates fit in our substrate rack and makes batch cleaning and processing much faster and simpler.
Product code | Oxide (nm) | Dicing | Resistivity (Ω cm) | Usage |
---|---|---|---|---|
S146 | 300 | Diced | <0.02 | OFETs with a robust electro-mechanical gate insulator (suitable for use with gold electrode evaporations) |
S147 | 400 | Diced | <0.02 | X-ray measurements, microscopy and ellipsometry |
S148 | 90 | Diced | <0.02 | Optical microscopy of 2D materials |
Wafer Specifications
Wafer diameter | 200 mm (8") |
Oxide thickness tolerance | +/- 5% (both sides) |
Oxide growth | Thermally grown (dry) on both sides |
Wafer type / dopant | P / Boron |
Wafer thickness | 725 +/- 25 µm |
Wafer growth | Czochralski (CZ) |
Orientation | <1 0 0> |
Front surface | Polished |
Back surface | Unpolished |
Dicing Specifications
Substrate size | 20 mm x 15 mm |
Substrates per wafer | Approx. 75 complete substrates (plus partial edge pieces) |
Wafer protection | None |
Cleaning routine
As with all organic electronic devices, getting a clean substrate is essential for high performance. Our pre-diced substrates make batch cleaning easier by use of a substrate rack. These wafers can be cleaned with the following routine:
- 5 mins sonication in 1% (v/v) Hellmanex solution
- 2x dump rinse in hot water
- 5 mins sonication in IPA
- 2x dump rinse in deionised water
- N2 blow dry