Silicon Oxide Substrates and Wafers

Order Code: S146

Price

(excluding Taxes)

£349.00


Silicon substrates designed for use in organic electronics labs as FET substrates, and other applications including X-ray studies, surface microscopy analysis and elipsometry measurements. Sold on 200 mm wafer mounts pre-oxidised and pre-diced to our standardised substrate size of 15 mm x 20 mm, which fits in our substrate rack and makes batch cleaning and processing much faster and simpler.

Please note that the current batch of wafers do not have a protective photoresist coating. With constant product development and improvement and for consistency and stability over long periods of time, we have had the latest batch produced without the photoresist. If you have any queries or concerns about this then please get in touch with the Ossila office as we will be happy to advise you.

 

Product code Oxide (nm) Dicing Resistivity (Ω cm) Usage
S146 300 Diced 0.0005 to 0.001

OFETs with a robust electro-mechanical gate insulator (suitable for use with gold electrode evaporations)

S147 400 Diced X-ray measurements, microscopy and ellipsometry

 

Datasheet

Silicon oxide substrate
Individual substrate (300 nm Oxide).
Silicon oxide wafer - 8 inch (200 mm)
Wafer of substrates (300nm Oxide).

 

Wafer Specifications

Wafer diameter 200 mm (8")
Oxide thickness and tolerance +/- 5% (both sides)
Oxide growth Thermally grown (dry)
Wafer type / dopant P / Boron
Wafer thickness 725 +/- 25 µm
Wafer growth Czochralski (CZ)
Orientation <1 0 0>
Front surface Polished
Back surface Etched

 

Dicing Specifications

Substrate size 20 mm x 15 mm
Substrates per wafer Approx. 75 complete substrates (plus partial edge pieces)
Wafer protection None

 

Cleaning routine

As with all organic electronic devices, getting a clean substrate is essential for high performance. Our pre-diced substrates make batch cleaning easier by use of a substrate rack. These wafers can be cleaned with the following routine:

  • 5 mins sonication in 1% (v/v) Hellmanex solution
  • 2x dump rinse in hot water
  • 5 mins sonication in IPA
  • 2x dump rinse in deionised water
  • N2 blow dry

 

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.