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Silicon Oxide Substrates and Wafers

Substrates and Fabrication

Product Code S146
Price £460 ex. VAT

Silicon substrates designed for use in organic electronics labs as FET substrates, and other applications including X-ray studies, surface microscopy analysis and elipsometry measurements. Sold on 200 mm wafer mounts, pre-oxidised and pre-diced to our standardised substrate size of 15 mm x 20 mm with no photoresist coating, these substrates fit in our substrate rack and makes batch cleaning and processing much faster and simpler.

Product code Oxide (nm) Dicing Resistivity (Ω cm) Usage
S146 300 Diced <0.02 OFETs with a robust electro-mechanical gate insulator (suitable for use with gold electrode evaporations)
S147 400 Diced <0.02 X-ray measurements, microscopy and ellipsometry
S148 90 Diced <0.02 Optical microscopy of 2D materials
Silicon oxide individual substrate
Individual silicon oxide substrate (300 nm oxide).

Wafer Specifications

Wafer diameter 200 mm (8")
Oxide thickness tolerance +/- 5% (both sides)
Oxide growth Thermally grown (dry) on both sides
Wafer type / dopant P / Boron
Wafer thickness 725 +/- 25 µm
Wafer growth Czochralski (CZ)
Orientation <1 0 0>
Front surface Polished
Back surface Unpolished

Dicing Specifications

Substrate size 20 mm x 15 mm
Substrates per wafer Approx. 75 complete substrates (plus partial edge pieces)
Wafer protection None

Cleaning routine

As with all organic electronic devices, getting a clean substrate is essential for high performance. Our pre-diced substrates make batch cleaning easier by use of a substrate rack. These wafers can be cleaned with the following routine:

  • 5 mins sonication in 1% (v/v) Hellmanex solution
  • 2x dump rinse in hot water
  • 5 mins sonication in IPA
  • 2x dump rinse in deionised water
  • N2 blow dry
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