Tris-PCz

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General Information

Product Details

Applications

Tris-PCz has a tri-carbazole back-boned structure joined at the 3 and 6 positions. The highly-conjugated carbazoles makes Tris-PCz electron-rich, which is widely used as a hole-transport layer material in TADF-OLED devices. 

Due to its electron-rich nature, Tris-PCz can form exciplexes with electron-deficient materials (such as B4PyPPM) in highly-efficient OLED devices with TADF characteristics.

Tris-PCz has a high triplet energy (E_T = 2.7 eV), so it is also frequently used as an exciton block layer material to effectively prevent the excitons' energy from being transferred (to the donor or acceptor) to achieve high fluorescence quantum efficiency.

Device structure	ITO/HATCN (10 nm)/Tris-PCz (35 nm)/10 wt.% 4CzPN:mCBP (G-EML) (3 nm)/6 wt.% 4CzPN:2 wt.% 4CzTPN-Ph:mCBP (R-EML) (2 nm)/10 wt.% 3CzTRZ:PPT (B-EML) (10 nm)/PPT (50 nm)/LiF (0.8 nm)/Al (100 nm) [2]
Colour	White
Max. Power Efficiency	30.3 lm W−1
Max. Current Efficiency	38.6 cd/A
Max. EQE	17.6%

Device structure	ITO/HATCN (10 nm)/Tris-PCz (35 nm)/10 wt.% 4CzPN:mCBP (G-EML) (5 nm)/6 wt.% 4CzPN:2 wt.% 4CzTPN-Ph:mCBP (R-EML) (4 nm)/10 wt.% 3CzTRZ:PPT (B-EML) (6 nm)/PPT (50 nm)/LiF (0.8 nm)/Al (100 nm) [2]
Colour	White
Max. Power Efficiency	34.1 lm W−1
Max. Current Efficiency	45.6 cd/A
Max. EQE	17.0%

Device structure	ITO/MoO3 (1 nm)/TAPC (20 nm)/Tris-PCz (10 nm)/Tris-PCz:B4PyPPM:3 wt% Ir(MDQ)2acac (30 nm)/B4PyPPM (50 nm)/LiF (1 nm)/Al (100 nm) [3]
Colour	Red
Max. Power Efficiency	37.3 lm W−1
Max. Current Efficiency	33.7 cd/A
Max. EQE	20.3%

Device structure	ITO (100 nm)/HATCN (10 nm)/Tris-PCz (30 nm)/mCBP (5 nm)/20 wt% of 3Ph2CzCzBN:mCBP (30 nm)/SF3-TRZ (10 nm)/ 30 wt% of Liq:SF3-TRZ (50 nm)/Liq (2 nm)/ Al (100 nm) [4]
Colour	Blue
Max. Power Efficiency	34.5 lm W−1
Max. Current Efficiency	41.7 cd/A
Max. EQE	17.9%

Device structure	ITO/TAPC (35 nm)/Tris-PCz (10 nm)/Tris-PCz:PIM-TRZ*(1:2) (30 nm)/PIM-TRZ (60 nm)/LiF (1 nm)/Al (100 nm) [5]
Colour	Green
Max. Power Efficiency	71.0 lm W−1
Max. Current Efficiency	52.0 cd/A
Max. EQE	18.6%

Device structure	ITO/4% ReO3:Tris-PCz (60 nm)/Tris-PCz (15 nm)/Tris-PCz:CN-T2T(1:1) (25 nm)/CN-T2T (50 nm)/Liq (0.5 nm)/Al (100 nm) [6]
Colour	Green
Max. Power Efficiency	46.5 lm W−1
Max. Current Efficiency	37.0 cd/A
Max. EQE	11.9%
Max. Luminance	73, 800 cd/m2

*For chemical structure information, please refer to the cited references

Literature and Reviews

1. Promising operational stability of high-efficiency organic light-emitting diodes based on thermally activated delayed fluorescence, H. Nakanotani1 et al., Sci. Rep., 3, 2127 (2013); DOI: 10.1038/srep02127.
2. High-efficiency white organic light-emitting diodes using thermally activated delayed fluorescence, J. Nishide et al., Appl. Phys. Lett. 104, 233304 (2014); doi: 10.1063/1.4882456.
3. High-performance red organic light-emitting devices based on an exciplex system with thermally activated delayed fluorescence characteristic, S. Yuan et al., Org. Electronics, 39, 10-15 (2016); doi: 10.1016/j.orgel.2016.09.020.
4. Efficient and stable sky-blue delayed fluorescence organic light-emitting diodes with CIEy below 0.4, C. Chan et al., Nat. Commun., 9, 5036 (2018); DOI: 10.1038/s41467-018-07482-6.
5. Exciplex-Based Electroluminescence: Over 21% External Quantum Efficiency and Approaching 100 lm/W Power Efficiency, B. Liang et al., J. Phys. Chem. Lett., 10, 2811−2816 (2019); DOI: 10.1021/acs.jpclett.9b01140.
6. Balance the Carrier Mobility To Achieve High Performance Exciplex OLED Using a Triazine-Based Acceptor, W. Hung et al., ACS Appl. Mater. Interfaces, 8, 4811−4818 (2016); DOI: 10.1021/acsami.5b11895.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.