B4PyPPm

B4PyPPM has a 2-phenylpyrimidine skeleton structure with four pyridine pendants. It exhibits superior electron injection properties and an electron mobility that is 10 times higher than those of 3-pyridine derivatives (e.g. B3PyMPM).

Like B4PymPm, B4PyPPM is electron-deficient and used as an electron transport or injection-layer material for OLED devices. Due to its electron-deficient nature, B4PyPPM can also be used with electron-donating materials to form exciplex systems. These are ideal candidates to act as high-performance hosts of both red fluorescent and phosphorescent TADF-OLEDs.

General Information

Product Details

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials for OLED Devices page.

Chemical Structure

Device Structure(s)

Device structure	ITO (110 nm)/TPDPES*:10 wt% TBPAH (20 nm)/TAPC (30 nm)/CBP:8 wt% Ir(ppy)3 (10 nm)/B4PyPPM (50 nm)/LiF (0.5 nm)/Al (100 nm) [1]
Colour	Green
Power Efficiency @100 cd/cm2	128 lm W−1
Current Efficiency @100 cd/cm2	105 cd/A

Device structure	ITO/MoO3 (1 nm)/TAPC (20 nm)/Tris-PCz* (10 nm)/Tris-PCz:B4PyPPM:3 wt% Ir(MDQ)2acac (30 nm)/B4PyPPM (50 nm)/LiF (1 nm)/Al (100 nm) [2]
Colour	Red
Max. Power Efficiency	37.7 lm W−1
Max. Current Efficiency	33.7 cd/A
Max. EQE	20.3%

Device structure	ITO (130 nm)/HATCN (1 nm)/TAPC (50 nm)/CBP:17 wt% Ir(ppy)3 (10 nm)/B4PyPPM (50 nm)/Libpp (1 nm)/Al (80 nm) [3]
Colour	Green
Max. Power Efficiency	125.4 lm W−1
Max. Current Efficiency	83.7 cd/A
Max. EQE	23.8%

Device structure	ITO/PPBI (20 nm)/TAPC (20 nm)/TCTA/CBP:20 wt% 26PXZINN* (20 nm)/B4PyPPm (50 nm)/LiF (0.5 nm)/Al (100 nm) [4]
Colour	Green
Max. Power Efficiency	99.0 lm W−1
Max. Current Efficiency	75.6 cd/A
Max. EQE	22.2%

Device structure	ITO (100 nm)/HATCN (1 nm)/TAPC (65 nm)/TCTA (5 nm)/20 wt% DACT-II-doped CBP (10 nm)/B4PyPPm (50 nm)/Liq (1 nm)/Al (80 nm) [5]
Colour	Green
Max. Power Efficiency	99.0 lm W−1
Max. Current Efficiency	75.6 cd/A
Max. EQE	22.2%

Device structure	ITO (130 nm)/TAPC (35 nm)/TCTA (5 nm)/CBP (5 nm)/CBP doped with 5 wt% 4CzIPN (5 nm)/B4PyPPM (65 nm)/LiF (0.8 nm)/Al (100 nm) [6]
Colour	Green
Max. Power Efficiency	106.9 lm W−1
Max. Current Efficiency	83.2 cd/A
Max. EQE	25.7%

*For chemical structure information, please refer to the cited references

Pricing

MSDS Documentation

B4PyPPm MSDS sheet

Literature and Reviews

1. 2-Phenylpyrimidine skeleton-based electron-transport materials for extremely efficient green organic light-emitting devices, H. Sasabe et al., Chem. Commun., 5821–5823 (2008); DOI: 10.1039/b812270a.
2. High-performance red organic light-emitting devices based on an exciplex system with thermally activated delayed fluorescence characteristic, S. Yuan et al., Org. Electrn., 39, 10-15 (2016); DIO: 10.1016/j.orgel.2016.09.020.
3. Extremely Low Operating Voltage Green Phosphorescent Organic Light-Emitting Devices, H. Sasabe et al., Adv. Funct. Mater., 23, 5550–5555 (2013); DOI: 10.1002/adfm.201301069.
4. High Power Efficiency Blue-to-Green Organic Light-Emitting Diodes Using Isonicotinonitrile-Based Fluorescent Emitters, H. Sasabe et al., Chem. Asian J., 12, 648 – 654 (2017); DOI : 10.1002/asia.201601641.
5. Ultrahigh Power Efficiency Thermally Activated Delayed Fluorescent OLEDs by the Strategic Use of Electron-transport Materials, H. Sasabe et al., Adv. Optical Mater., 6, 1800376 (2018); DOI: 10.1002/adom.201800376.
6. High-Performance Green OLEDs Using Thermally Activated Delayed Fluorescence with a Power Efficiency of over 100 lm W−1, Y. Seino et al., Adv. Mater., 28, 2638–2643 (2016); DOI: 10.1002/adma.201503782.

To the best of our knowledge the information provided here is accurate. However, Ossila assume no liability for the accuracy of this page. The values provided are typical at the time of manufacture and may vary over time and from batch to batch. All products are for laboratory and research and development use only, and may not be used for any other purpose including health care, pharmaceuticals, cosmetics, food or commercial applications.