1 g

Order Code: M431
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General Information

CAS number 142289-08-5
Chemical formula C40H30
Molecular weight 510.67 g/mol
Absorption λmax 351 nm (THF)
Fluorescence λem 447 nm (THF)
HOMO/LUMO HOMO = 5.9 eV, LUMO = 2.8 eV
  • 4,4'-Bis(2,2-diphenylvinyl)biphenyl
  • 4,4-Bis(2,2-diphenylvinyl)-1,1-diphenyl
  • 4,4'-Bis(2,2-diphenylethenyl)-1,1'-biphenyl
Classification / Family Hole-injection materials, Hole-transporting materials, Blue light-emitting materials, Host materials, Organic light-emitting diodes (OLEDs), Organic electronics

Product Details

Purity Sublime >99.0% (HPLC)
Melting point 207 °C (lit.)
Appearance Yellow powder/crystals

dPVBi chemical structure

Chemical structure of 4,4 -bis(2,2 -diphenylvinyl)-1,1 -diphenyl (dPVBi); CAS No. 142289-08-5; Chemical Formula C40H30.


DPVBi, 4,4 -bis(2,2 -diphenylvinyl)-1,1 -diphenyl, is a wide band gap small molecule semiconducting material, commonly used as a blue host-emitting material in OLEDs.

It has been reported that DPVBi can effectively manipulate the Schottky energy barrier between the ITO and the emitting layer, and thus significantly enhance hole-injection, current and luminance efficiencies of OLEDs, as well as their stability [1].

Device structure

ITO/CuPc/NPB/DPVBi:DCJTB/Alq/LiF/Al [2]                       
Colour White   white
Max. Luminance 7,822 cd/m2
Max. Current Efficiency 2.45 cd/A                                                     
Max. Power Efficiency 1.75 lm W1
Device structure  ITO/ NPB (70 nm)/DPVBi:BCzVBi (15 wt%, 15 nm)/ADN:BCzVBi (15% wt%, 15 nm)/BPhen (30 nm)/ Liq (2 nm)/Al (100 nm) [3]
Colour Deep Blue   deep blue
Max. Luminance       8,668 cd/m2
Max. Current Efficiency  5.16 cd/A
Device structure ITO/MoO3 (5 nm)/ NPB (35 nm)/CBP (5 nm)/DPVBi (I) (10 nm)/CBP:Rubrene (4:1) (3 nm)/DPVBi (II) (30 nm)/CBP (HBL3) (2 nm)/BPhen (10 nm)/LiF/Al [4]
Colour White   white
Max. Luminance  2,650 cd/m2
Max. Current Efficiency  4.6 cd/A
Device structure ITO/NPB/DPVBi:BCzVBi-6%/MADN:DCM2-0.5%/Bphen/Liq/Al [6]
Colour White   white
Max. Luminance  15,400 cd/m2
Max. Current Efficiency 6.19 cd/A

Device structure                      ITO/TBADN:3 wt% DSA-Ph (27 nm)/DPVBi:5 wt% BCzVB (3 nm)/LiF/Al [7]
Colour Blue   blue
Max. Luminance  16,530
Max. Current Efficiency  9.77 cd/A
Max. Power Efficiency  5.68 lm W1

Device structure glass/Ag (100 nm)/ITO (90 nm)/2-TNATA (60 nm)/NPB (15 nm)/ DPVBi:DCJTB (1.2%, 30 nm)/Alq3 (20 nm)/Li (1.0 nm)/Al (2.0 nm)/Ag (20 nm)/ITO(63 nm)/SiO2 (42 nm) [8]
Colour White   white
Max. Luminance  14,500 cd/m2
Max. Power Efficiency  1.4 lm W1



hplc of dpvbi

HPLC trace of 4,4 -bis(2,2 -diphenylvinyl)-1,1 -diphenyl (dPVBi).


Literature and Reviews

  1. Enhanced Performance of Organic Light Emitting Device by Incorporating 4,4-Bis(2,2-diphenylvinyl)-1,1-Biphenyl as an Efficient Hole-Injection Nano-Layer, W. Yun et al., J. Nanosci. Nanotechnol., 13 (3), 2166-2170 (2013).
  2. A white OLED based on DPVBi blue light emitting host and DCJTB red dopant, X. Zheng et al., Display, 24 (3), 121-124 (2003), doi:10.1016/j.displa.2003.09.004.
  3. Highly efficient blue organic light-emitting diodes using dual emissive layers with host-dopant system, B. Lee et al., J. Photon. Energy. 3(1), 033598 (2013), doi:10.1117/1.JPE.3.033598.
  4. Enhancing Color Purity and Stable Efficiency of White Organic Light Diodes by Using Hole-Blocking Layer, C-J. Huang et al., J. Nanomater., 915894, (2014), http://dx.doi.org/10.1155/2014/915894.
  5. Efficient white organic light-emitting diodes based on a balanced split of the exciton-recombination zone using a graded mixed layer as an electron-blocking layer, C. K. Kim et al., J. Soc. Info. Display, 18 (1), 97-102 (2012).
  6. High efficient white organic light-emitting diodes using BCzVBi as blue fluorescent dopant,
    Y. Kim et al., J Nanosci. Nanotechnol., 8(9), 4579-83 (2008).
  7. Color tunability in multilayer OLEDs based on DCM and DPVBi as emitting materials, P. Petrova et al., J. Phys.: Conference Series 514, 012015 (2014), doi:10.1088/1742-6596/514/1/012015.
  8. White top-emitting organic light-emitting diodes using one-emissive layer of the DCJTB doped DPVBi layer, M. Kim et al., Thin Solid Films 516, 3590–3594 (2008); doi:10.1016/j.tsf.2007.08.078.