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Product Code M961-1g
Price £200 ex. VAT

Bathophenanthroline, HBL material

Used to enable ohmic contact to any electrode when doped with Lithium


Overview | Specifications | Pricing and Options | MSDS | Literature and Reviews


BPhen (CAS number 1662-01-7) is widely used as a hole-blocking or exciton-blocking layer due to its wide energy gap and high ionisation potential.

The phenanthroline unit is small, rigid, and planar, with extended π-electrons and short hopping lengths that facilitate electron mobility. The electron mobility of BPhen is about 5 × 10-4 cm2 V-1 s-1, which is about two orders of magnitude higher than that of Alq3.

When doped with lithium, BPhen:Li is an excellent electron-transport material, and is often used as an electron-injection layer to enable ohmic contact to any electrode -- without the need to consider the work function alignments.

General Information


CAS number 1662-01-7
Chemical formula C24H16N2
Molecular weight 332.40 g/mol
Absorption λmax 272 nm (in THF)
Fluorescence λem 379 nm (in THF)
HOMO/LUMO HOMO = 6.4 eV; LUMU = 3.0 eV
Synonyms
  • Bathophenanthroline
  • 4,7-Diphenyl-1,10-phenanthroline
Classification / Family Hole-blocking layer (HBL), Electron-injection layer (EIL), OLEDS, Organic photovoltaics, Perovskite solar cells.

Product Details


Purity Sublimed > 99.0%
Melting point 218-220 °C (lit.)
Appearance Off-white to pale yellow crystals

Chemical Structure


bphen Bathophenanthroline
Chemical structure of bathophenanthroline (BPhen)

Device Structure(s)


Device structure ITO/2-TNATA:33% WO3 (100 nm)/NPB (10 nm)/Alq3 (30 nm)/Bphen (20 nm)/BPhen: 2% Cs (10 nm)/Al (150 nm) [1]
Colour Green green light emitting device
Operating Voltage for 100 cd/m2 3.1 V
Current Efficiency for 20 mA/cm2 4.4 cd/A
Power Efficiency for 20 mA/cm2 3.3 lm W−1
Device structure ITO/TAPC:MoOx (10 nm, 15 wt.%)/TAPC(35 nm)/TcTa:Ir(BT)2(acac) (5 nm, 4 wt.%)/26DCzPPy:FIrpic (5 nm, 15 wt.%)/26DCzPPy:Ir(BT)2(acac) (5 nm, 4 wt.%)/BPhen (40 nm)/Cs2CO3 (1 nm)/Al (100 nm) [2]
Colour White white light emitting device
Max. EQE 13.2%
Max. Current Efficiency 35.0 cd/A
Max. Power Efficiency 30.6 lm W−1
Device structure Si/SiO2/Al (80 nm)/MoOx: TAPC (43 nm, 15 wt.%)/TAPC (10 nm)/Ir(piq)3:TcTa (3 nm, 6%)/TcTa (2 nm)/FIrpic:26DCzPPy (5 nm, 12 wt.%)/BPhen (2 nm)/PO-01*:26DCzPPy (5 nm, 6 wt.%)/BPhen (40 nm)/Cs2CO3 (1 nm)/Al (2 nm)/Cu (18 nm)/TcTa (60 nm) [3]
Colour White white light emitting device
EQE @ 1000 cd/m2 10%
Current Efficiency @ 1000 cd/m2 25.6 cd/A
Power Efficiency @ 1000 cd/m2 20.1 lm W−1
Device structure ITO/MoOx (2 nm)/m-MTDATA: MoOx (30 nm, 15 wt.%)/m-MTDATA(10 nm)/Ir(ppz)3 (10 nm)/CBP:PO-01* (3 nm, 6 wt.%)/Ir(ppz)3(1 nm)/DBFDPOPhCz*:FIrpic (10 nm,10 wt.%)/Bphen (36 nm)/LiF(1 nm)/Al [4]
Colour White white light emitting device
Max. EQE 12.2%
Max. Current Efficiency 42.4 cd/A
Max. Power Efficiency 47.6 lm W−1
Device structure ITO/NPB (30 nm)/CBP:8 wt% (t-bt)2Ir(acac)* (15 nm)/BPhen(35 nm)/LiF (1 nm)/CoPc:C60 (4:1) (5 nm)/MoO3 (5 nm)/NPB(30 nm)/CBP:8 wt% (t-bt)2Ir(acac)* (15 nm)/BPhen (35 nm)/Mg:Ag (100 nm) [5]
Colour Yellow yellow device
Max. EQE 16.78%
Max. Luminance 42,236 cd/m2
Max. Current Efficiency 50.2 cd/A
Max. Power Efficiency 12.9 lm W−1
Device structure ITO/NPD* (40 nm)/9%-Ir(piq)3:CBP (20 nm)/BPhen (50 nm)/KF (1 nm)/Al [6]
Colour Red red light emitting device
Max. Luminance 11,000 cd/m2
Max EQE 10.3%
Max. Powder Efficiency 8.0 lm W−1
Device structure ITO/0.4 wt% F4TCNQ doped α NPD (30 nm)/ 5 wt% Ir(ppy)3 doped CBP (50 nm)/BPhen (30 nm)/20 wt% TCNQ mixed BPhen (1.5 nm)/Al [7]
Colour Green green light emitting device
Luminance @ 15 V 1,320 cd/m2
Power Efficiency @ 14 V 56.6 lm W-1
Current Efficiency @ 14 V 23.17 cd/A
Device structure ITO/F4TCNQ (3 nm)/MeO-Spiro-TPD (27 nm)/CBP + BCzVbi* (50 nm)/BPhen (10 nm)/TCNQ mixed BPhen (1.5 nm)/Al [8]
Colour Red red light emitting device
Luminance @ 10 mA/cm2 1,790 cd/m2
Power Efficiency @ 10 mA/cm2 4.65 lm W−1
Current Efficiency @ 10 mA/cm2 18.0 cd/A
Device structure ITO/ NPB (70 nm)/DPVBi:BCzVBi (15 wt%, 15 nm)/ADN:BCzVBi (15% wt%, 15 nm)/BPhen (30 nm)/ Liq (2 nm)/Al (100 nm) [9]
Colour Deep Blue deep blue light emitting device
Max. Luminance 8,668 cd/m2
Max. Current Efficiency 5.16 cd/A
Device structure ITO/m-MTDATA:MoOx (3:1, 15 nm)/m-MTDATA (30 nm)/NPB (5 nm)/Alq3 (50 nm)/BPhen (10 nm)/LiF (1 nm)/Al (100 nm) [10]
Colour Green green light emitting device
Max. Luminance 42,090 cd/m2
Max. Current Efficiency 4.77 cd/A
Max. Power Efficiency 3.5 lm W−1
Device structure ITO/MoO3 (5 nm)/ NPB (35 nm)/CBP (5 nm)/DPVBi (I) (10 nm)/CBP:Rubrene (4:1) (3 nm)/DPVBi (II) (30 nm)/CBP (HBL3) (2 nm)/BPhen (10 nm)/LiF/Al [11]
Colour White white light emitting device
Max. Luminance 2,650 cd/m2
Max. Current Efficiency 4.6 cd/A
Device structure ITO/MoO3 (5 nm)/ NPB (35 nm)/CBP (5 nm)/DPVBi (I) (10 nm)/CBP:Rubrene (4:1) (3 nm)/DPVBi (II) (30 nm)/CBP (HBL3) (2 nm)/BPhen (10 nm)/LiF/Al [12]
Colour White white light emitting device
Max. Luminance 12,100 cd/m2
Current Efficiency @ 11 V 5.03 cd/A
Device structure ITO/NPB/DPVBi:BCzVBi-6%/MADN:DCM2-0.5%/Bphen/Liq/Al [13]
Colour White white light emitting device
Max. Luminance 15,400 cd/m2
Max. Current Efficiency 6.19 cd/A

Pricing


Grade Order Code Quantity Price
Sublimed (>99.0% purity) M961 1 g £200
Sublimed (>99.0% purity) M961 5 g £700

MSDS Documentation


BPhen MSDSBPhen MSDS sheet

Literature and Reviews


  1. Highly Power Efficient Organic Light-Emitting Diodes with a p-Doping Layer, C-C. Chang et al., Appl. Phys. Lett., 89, 253504 (2006); doi: 10.1063/1.2405856.
  2. Pure White Organic Light-Emitting Diode with Lifetime Approaching the Longevity of Yellow Emitter, J-H. Jou et al., ACS Appl. Mater. Interfaces, 3, 3134–3139 (2011). dx.doi.org/10.1021/am2006383.
  3. Exceedingly efficient deep-blue electroluminescence from new anthracenes obtained using rational molecular design, S-K. Kim et al., J. Mater. Chem., 18, 3376–3384 (2008). DOI: 10.1039/B805062G.
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