BPhen (Bathophenanthroline)

CAS Number 1662-01-7

Charge Transport Layer Materials, Electron Injection Layer Materials, Electron Transport Layer Materials, High Purity Sublimed Materials, Materials, OLED Materials, Perovskite Interface Materials, Perovskite Materials, Semiconducting Molecules

MSDS

Bathophenanthroline, HBL material

Used to enable ohmic contact to any electrode when doped with Lithium, Bathophenanthroline, High Purity Sublimed ≥99.5%, CAS No. 1662-01-7

Overview | Specifications | MSDS | Literature and Reviews

BPhen (CAS number 1662-01-7) is widely used as a hole-blocking or exciton-blocking layer due to its wide energy gap and high ionization potential.

The phenanthroline unit is small, rigid, and planar, with extended π-electrons and short hopping lengths that facilitate electron mobility. The electron mobility of BPhen is about 5 × 10^-4 cm²V^-1 s^-1, which is about two orders of magnitude higher than that of Alq₃.

When doped with lithium, BPhen:Li is an excellent electron-transport material, and is often used as an electron-injection layer to enable ohmic contact to any electrode -- without the need to consider the work function alignments.

General Information

CAS number	1662-01-7
Chemical formula	C₂₄H₁₆N₂
Molecular weight	332.40 g/mol
Absorption	λ_max 272 nm (in THF)
Fluorescence	λ_em 379 nm (in THF)
HOMO/LUMO	HOMO = 6.4 eV; LUMU = 3.0 eV
Synonyms	Bathophenanthroline 4,7-Diphenyl-1,10-phenanthroline
Classification / Family	Hole-blocking layer (HBL), Electron-injection layer (EIL), OLEDS, Organic photovoltaics, Perovskite solar cells.

Product Details

Purity	Sublimed > 99.5%
Melting point	218-220 °C (lit.)
Appearance	Off-white to pale yellow crystals

Chemical Structure

Device Structure(s)

Device structure	ITO/2-TNATA:33% WO₃ (100 nm)/NPB (10 nm)/Alq₃ (30 nm)/Bphen (20 nm)/BPhen: 2% Cs (10 nm)/Al (150 nm) [1]
Color	Green
Operating Voltage for 100 cd/m²	3.1 V
Current Efficiency for 20 mA/cm²	4.4 cd/A
Power Efficiency for 20 mA/cm²	3.3 lm W⁻¹

Device structure	ITO/TAPC:MoO_x (10 nm, 15 wt.%)/TAPC(35 nm)/TcTa:Ir(BT)₂(acac) (5 nm, 4 wt.%)/26DCzPPy:FIrpic (5 nm, 15 wt.%)/26DCzPPy:Ir(BT)₂(acac) (5 nm, 4 wt.%)/BPhen (40 nm)/Cs₂CO₃ (1 nm)/Al (100 nm) [2]
Color	White
Max. EQE	13.2%
Max. Current Efficiency	35.0 cd/A
Max. Power Efficiency	30.6 lm W⁻¹

Device structure	Si/SiO₂/Al (80 nm)/MoO_x: TAPC (43 nm, 15 wt.%)/TAPC (10 nm)/Ir(piq)₃:TcTa (3 nm, 6%)/TcTa (2 nm)/FIrpic:26DCzPPy (5 nm, 12 wt.%)/BPhen (2 nm)/PO-01:26DCzPPy (5 nm, 6 wt.%)/BPhen* (40 nm)/Cs₂CO₃ (1 nm)/Al (2 nm)/Cu (18 nm)/TcTa (60 nm) [3]
Color	White
EQE @ 1000 cd/m²	10%
Current Efficiency @ 1000 cd/m²	25.6 cd/A
Power Efficiency @ 1000 cd/m²	20.1 lm W⁻¹

Device structure	ITO/MoOx (2 nm)/m-MTDATA: MoOx (30 nm, 15 wt.%)/m-MTDATA(10 nm)/Ir(ppz)₃ (10 nm)/CBP:PO-01* (3 nm, 6 wt.%)/Ir(ppz)₃(1 nm)/DBFDPOPhCz:FIrpic (10 nm,10 wt.%)/Bphen* (36 nm)/LiF(1 nm)/Al [4]
Color	White
Max. EQE	12.2%
Max. Current Efficiency	42.4 cd/A
Max. Power Efficiency	47.6 lm W⁻¹

Device structure	ITO/NPB (30 nm)/CBP:8 wt% (t-bt)2Ir(acac)* (15 nm)/BPhen(35 nm)/LiF (1 nm)/CoPc:C60 (4:1) (5 nm)/MoO₃(5 nm)/NPB(30 nm)/CBP:8 wt% (t-bt)2Ir(acac)* (15 nm)/BPhen (35 nm)/Mg:Ag (100 nm) [5]
Color	Yellow
Max. EQE	16.78%
Max. Luminance	42,236 cd/m²
Max. Current Efficiency	50.2 cd/A
Max. Power Efficiency	12.9 lm W⁻¹

Device structure	ITO/NPD* (40 nm)/9%-Ir(piq)₃:CBP (20 nm)/BPhen (50 nm)/KF (1 nm)/Al [6]
Color	Red
Max. Luminance	11,000 cd/m²
Max EQE	10.3%
Max. Powder Efficiency	8.0 lm W⁻¹

Device structure	ITO/0.4 wt% F4TCNQ doped α NPD (30 nm)/ 5 wt% Ir(ppy)₃ doped CBP (50 nm)/BPhen (30 nm)/20 wt% TCNQ mixed BPhen (1.5 nm)/Al [7]
Color	Green
Luminance @ 15 V	1,320 cd/m²
Power Efficiency @ 14 V	56.6 lm W^-1
Current Efficiency @ 14 V	23.17 cd/A

Device structure	ITO/F4TCNQ (3 nm)/MeO-Spiro-TPD (27 nm)/CBP + BCzVbi* (50 nm)/BPhen (10 nm)/TCNQ mixed BPhen (1.5 nm)/Al [8]
Color	Red
Luminance @ 10 mA/cm²	1,790 cd/m²
Power Efficiency @ 10 mA/cm²	4.65 lm W⁻¹
Current Efficiency @ 10 mA/cm²	18.0 cd/A

Device structure	ITO/ NPB (70 nm)/DPVBi:BCzVBi (15 wt%, 15 nm)/ADN:BCzVBi (15% wt%, 15 nm)/BPhen (30 nm)/ Liq (2 nm)/Al (100 nm) [9]
Color	Deep Blue
Max. Luminance	8,668 cd/m²
Max. Current Efficiency	5.16 cd/A

Device structure	ITO/m-MTDATA:MoO_x (3:1, 15 nm)/m-MTDATA (30 nm)/NPB (5 nm)/Alq₃ (50 nm)/BPhen (10 nm)/LiF (1 nm)/Al (100 nm) [10]
Color	Green
Max. Luminance	42,090 cd/m²
Max. Current Efficiency	4.77 cd/A
Max. Power Efficiency	3.5 lm W⁻¹

Device structure	ITO/MoO₃ (5 nm)/ NPB (35 nm)/CBP (5 nm)/DPVBi (I) (10 nm)/CBP:Rubrene (4:1) (3 nm)/DPVBi (II) (30 nm)/CBP (HBL3) (2 nm)/BPhen (10 nm)/LiF/Al [11]
Color	White
Max. Luminance	2,650 cd/m²
Max. Current Efficiency	4.6 cd/A

Device structure	ITO/MoO₃ (5 nm)/ NPB (35 nm)/CBP (5 nm)/DPVBi (I) (10 nm)/CBP:Rubrene (4:1) (3 nm)/DPVBi (II) (30 nm)/CBP (HBL3) (2 nm)/BPhen (10 nm)/LiF/Al [12]
Color	White
Max. Luminance	12,100 cd/m²
Current Efficiency @ 11 V	5.03 cd/A

Device structure	ITO/NPB/DPVBi:BCzVBi-6%/MADN:DCM2-0.5%/Bphen/Liq/Al [13]
Color	White
Max. Luminance	15,400 cd/m²
Max. Current Efficiency	6.19 cd/A

MSDS Documentation

BPhen MSDS sheet

Literature and Reviews

Highly Power Efficient Organic Light-Emitting Diodes with a p-Doping Layer, C-C. Chang et al., Appl. Phys. Lett., 89, 253504 (2006); doi: 10.1063/1.2405856.
Pure White Organic Light-Emitting Diode with Lifetime Approaching the Longevity of Yellow Emitter, J-H. Jou et al., ACS Appl. Mater. Interfaces, 3, 3134–3139 (2011). dx.doi.org/10.1021/am2006383.
Exceedingly efficient deep-blue electroluminescence from new anthracenes obtained using rational molecular design, S-K. Kim et al., J. Mater. Chem., 18, 3376–3384 (2008). DOI: 10.1039/B805062G.

Highly efficient and color-stable white organic light-emitting diode based on a novel blue phosphorescent host, Q. Wu et al., Syn. Metals 187, 160– 164 (2014); http://dx.doi.org/10.1016/j.synthmet.2013.11.010.
Effect of bulk and planar heterojunctions based charge generation layers on the performance of tandem organic light-emitting diodes, Z. Ma et al., Org. Electronics, 30, 136-142 (2016). doi:10.1016/j.orgel.2015.12.020
Homoleptic Cyclometalated Iridium Complexes with Highly Efficient Red Phosphorescence and Application to Organic Light-Emitting Diode, A. Tsuboyama et al., J. Am. Chem. Soc., 125, 12971-12979 (2003). DOI: 10.1021/ja034732d.
Novel organic electron injection layer for efficient and stable organic light emitting diodes, R. Grover et al., J. Luminescence, 146, 53–56 (2014). http://dx.doi.org/10.1016/j.jlumin.2013.09.004.
Light outcoupling efficiency enhancement in organic light emitting diodes using an organic scattering layer, R. Grover et al., Phys. Status Solidi RRL 8 (1), 81–85 (2014). DOI: 10.1002/pssr.201308133.
Highly efficient blue organic light-emitting diodes using dual emissive layers with host-dopant system, B. Lee et al., J. Photon. Energy. 3(1), 033598 (2013), doi:10.1117/1.JPE.3.033598.
Very low turn-on voltage and high brightness tris-(8-hydroxyquinoline) aluminumbased organic light-emitting diodes with a MoOx p-doping layer, G. Xie et al., Appl. Phys. Lett., 92, 093305 (2008); doi: 10.1063/1.2890490.
Enhancing Color Purity and Stable Efficiency of White Organic Light Diodes by Using Hole-Blocking Layer, C-J. Huang et al., J. Nanomater., 2014; dio: 10.1155/2014/915894.
Efficient white organic light-emitting diodes based on a balanced split of the exciton-recombination zone using a graded mixed layer as an electron-blocking layer, C. K. Kim et al., J. Soc. Info. Display, 18 (1), 97-102 (2012).
High efficient white organic light-emitting diodes using BCzVBi as blue fluorescent dopant, Y. Kim et al., J Nanosci. Nanotechnol., 8(9), 4579-83 (2008).

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