Order Code: M621
MSDS sheet


(excluding Taxes)


General Information

CAS number 124729-98-2
Chemical formula C57H48N4
Molecular weight 789.02 g/mol
Absorption λmax 312 nm, 342 nm in THF
Fluorescence λem 425 nm in THF
HOMO/LUMO HOMO 5.1 eV, LUMO 2.0 eV [1]
  • 4,4',4''-Tris[(3-methylphenyl)phenylamino]triphenylamine
Classification / Family

Triphenylamine derivatives, Hole-injection materials, Hole transporting materials, Light-emitting diodes, Organic electronics


Product Details

Purity >99.0% (sublimed)
Melting point 210 °C
Colour Yellow/white powder

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials for OLED devices page.

Chemical Structure

chemical structure of m-MTDATA
Chemical Structure of 4,4′,4′′-Tris[phenyl(m-tolyl)amino]triphenylamine (m-MTDATA); CAS No. 124729-98-2; Chemical Formula C57H48N4


With its very low solid-state ionisation potential and good-quality amorphous film, 4,4',4''-Tris[phenyl(m-tolyl)amino]triphenylamine, m-MTDATA acts as an effective material for the hole-injection buffer layer (HIL) that facilitates hole injection from the ITO electrode to the hole transporting layer (HTL). This potentially lowers the driving voltage of the OLED devices. F4-TCNQ, a strong electron acceptor, is always used together with m-MTDATA as a p-doping material to improve the conductivity of the HTL buffering layer. Typical structure of the device (or part of the device) is ITO/p-doped m-MTDATA/HTL/etc.


Device structure ITO/MoOx (2 nm)/m-MTDATA: MoOx (30 nm, 15 wt.%)/m-MTDATA
(10 nm)/Ir(ppz)
(10 nm)/CBP:PO-01* (3 nm, 6 wt.%)/Ir(ppz)3
(1 nm)/DBFDPOPhCz*:FIrpic (10 nm,10 wt.%)/Bphen (36 nm)/LiF
(1 nm)/Al [3]                   
Colour White  white
Max. EQE 12.2%
Max. Current Efficiency 42.4 cd/A
Max. Power Efficiency 47.6 lm W1


Device structure                 ITO/[F4-TCNQ(x nm)/m-MTDATA(y nm)]n/NPB/Alq3/Bphen/Cs2CO3/Al [4]
Colour Green  green
Max. Luminance 23,500 cd/m2
Max. Current Efficiency 7.0 cd/A
Max. Power Efficiency 4.46 lm W1  


Device structure ITO/PEDOT:PSS(40nm)/m-MTDATA:Ir(Flpy-CF3)(40nm)/TmPyPB(55nm)/LiF(0.5nm)/Al(100nm) [5]
Colour    Yellow  yellow
Max. EQE 25.2%
Max. Luminance  43,085 cd/m2
Max. Current Efficiency 74.3 cd/A
Max. Power Efficiency 97.2 lm W1


Device structure                                       ITO/PEDOT:PSS/m-MTDATA (20 nm)/m-MTDATA:3TPYMB (60 nm)/3TPYMB (10 nm)/LiF (0.8 nm)/ Al (100 nm) [6]
Colour                                  Red  red
Max. Luminance 17,100cd/m2
Max. Current Efficiency      36.79 cd/A


Device structure  ITO (80 nm)/m-MTDATA (20 nm)/NPB (20 nm)/[ADN:Alq3 (4:1)]:1wt.% DCJTB:0.2wt.%C545T/Alq3 (30 nm)/LiF (1 nm)/Al (100 nm) [7]
Colour Red  red
Max. Luminance 11,600 cd/m2    
Max. Current Efficiency 3.6 cd/A                  


Device structure                                            ITO/m-MTDATA*:F4-TCNQ (100 nm)/TPD (5 nm)/Alq3 (20 nm) /BPhen (10 nm)/ Bphen:Li (30 nm)/LiF (1 nm)/Al (100 nm) [8]                   
Colour Green  green
Max. Luminance 10,000 cd/m2 at 5.2 V
Max. Current Efficiency 5.27 cd/A


Device structure  ITO/m-MTDATA (30 nm)/NPB (20 nm)/TPBI:4 wt% Ir(ppy)3:2 wt%Ir(piq)2(acac) (30 nm)/Alq3(20 nm)/LiF/Al [9]
Colour White  white
Max. Luminance 33,012 cd/m2
Current Efficiency@100 


15.3 cd/A
Max. Powder Efficiency 10.7 lm W1


Device structure                      ITO/m-MTDATA/TPD/F-TBB*/Alq3/MgAg [10]
Colour Blue   blue oled
Max EQE 1.4%
Maximum luminance 3960 cd m-2 at 15.0 V

*For chemical structure information please refer to the cited references


hplc of m-mtdata

HPLC trace of 4,4′,4′′-Tris[phenyl(m-tolyl)amino]triphenylamine (m-MTDATA).

Literature and Reviews

  1. Nanoscale transport of charge-transfer states in organic donor–acceptor blends,  P. B. Deotare et al., Nat. Mater., 14, 1130-1135 (2015). DOI: 10.1038/NMAT4424.
  2. Photophysical Investigation of the Thermally Activated Delayed Emission from Films of m-MTDATA:PBD Exciplex, D. Graves et al., Adv. Funct. Mater., 24, 2343–2351 (2014). DOI: 10.1002/adfm.201303389.
  3. Highly efficient and color-stable white organic light-emitting diode based on a novel blue phosphorescent host, Q. Wu et al., Syn. Metals 187, 160– 164 (2014). http://dx.doi.org/10.1016/j.synthmet.2013.11.010.
  4. Effect of type-II quantumwell of m-MTDATA/a-NPD on the performance of green organic light-emitting diodes, J. Yang et al., Microelectronics J.l40, 63–65 (2009). doi:10.1016/j.mejo.2008.08.004.
  5. Solution-Processed Phosphorescent Organic LightEmitting Diodes with Ultralow Driving Voltage and Very High Power Efficiency, S. Wang et al., Sci. Report, 5:12487 (2015); DOI: 10.1038/srep12487.
  6. Exciplex emission and decay of co-deposited 4,4′,4″-tris[3-methylphenyl(phenyl)amino]triphenylamine:tris-[3-(3-pyridyl)mesityl]borane organic light-emitting devices with different electron transporting layer thicknesses, Q Huang et al., Appl. Phys. Lett. 104, 161112 (2014); http://dx.doi.org/10.1063/1.4870492.
  7. Red organic light-emitting diodes with high efficiency, low driving voltage and saturated red color realized via two step energy transfer based on ADN and Alq3 co-host system, K. Haq et al., Curr. Appl. Phys., 9, 257-262 (2009); doi:10.1016/j.cap.2008.02.005.
  8. Low-voltage organic electroluminescent devices using pin structures, J. Huang et al., Appl. Phys. Lett. 80, 139 (2002); http://dx.doi.org/10.1063/1.143211.
  9. High-efficiency electrophosphorescent white organic light-emitting devices with a double-doped emissive layer, W. Xie et al., Semicond. Sci. Technol. 20, 326–329 (2005); doi:10.1088/0268-1242/20/3/013.
  10. Development of high-performance blue-violet-emitting organic electroluminescent devices, K. Okumoto et al., Appl. Phys. Lett. 79(9), 1231–1233 (2001).
  11. Highly efficient flexible organic light-emitting devices utilizing F4-TCNQ/m-MTDATA multiple quantumwell structures, X. Wu et al., J. Luminescence 132, 1261–1264 (2012). doi:10.1016/j.jlumin.2011.12.084.
  12. High-efficiency electrophosphorescent organic light-emitting diodes with double lightemitting
    layers, X. Zhou et al., Appl. Phys. Lett., 81, 4070 (2002). doi: 10.1063/1.1522495.