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Product Code M351-100mg
Price $132 ex. VAT

F4TCNQ, most effective p-type dopant with a deep LUMO level

High-purity (>99.0%) and available online for priority dispatch


Overview | Specifications |Pricing and Options | Literature and Reviews


F4TCNQ, CAS number 29261-33-4, is one of the most widely used and most effective p-type dopants due to its strong electron-accepting ability and the extended π system. It has a deep LUMO level (-5.2 eV) which is energetically in the vicinity of the HOMO level of many organic semiconductors. Doping is facilitated by charge transfer from the HOMO level of the host to the LUMO of the dopant molecule. Pin devices with F4TCNQ doped 4,4',4''-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA) serving as the p-doped HTL show high luminance and efficiency at extremely low operating voltages: For instance, a luminance of 1000 cd/m2 is reached at a voltage of 2.9 V [1].

F4TCNQ from Ossila was used in a high-impact paper (IF 18.81)

F4TCNQ from Ossila was used in the high-impact paper (IF 18.81), High Seebeck Coefficient in Mixtures of Conjugated Polymers, G. Zuo et al., Adv. Funct. Mater., 1703280 (2017); DOI: 10.1002/adfm.201703280.

It has been reported that by controlling the doping concentration, the PCE of the PCDTBT:F4TCNQ solar cells increased from 6.41% to 7.94%, mainly due to improving the photocurrent with a F4TCNQ weight ratio of the blend lower than 0.5% [2]. F4TCNQ is also used as the p-type dopant for graphenes [3,4].

General Information


CAS number 29261-33-4
Chemical formula C12F4N4
Molecular weight 276.15 g/mol
HOMO/LUMO HOMO = 8.3 eV, LUMO = 5.2 eV
Synonyms
  • F4-TCNQ
  • 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane
  • (2,3,5,6-Tetrafluoro-2,5-cyclohexadiene-1,4-diylidene)dimalononitrile
  • 7,7,8,8-Tetracyano-2,3,5,6-tetrafluoroquinodimethane
Classification / Family Fluorinated compounds, p-type dopant, Strong electron acceptor, Hole-injection materials, Hole-transport layer material, OLEDs, Polymer Solar Cells, Perovskite Solar Cells, OFETs.

Product Details


Purity >99% (sublimed)
Melting point 291 °C (DSC onset)
Appearance Brown-yellow powder

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials.

 Chemical structure of F4TCNQ
Chemical structure of 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ)
Device structure ITO/m-MTDATA*:F4-TCNQ (100 nm)/TPD (5 nm)/Alq3 (20 nm) /BPhen (10 nm)/ Bphen:Li (30 nm)/LiF (1 nm)/Al (100 nm) [1]
Colour Green green light emitting device
Luminance 1,000 cd/m2 at 2.9 V (high brightness at low operating voltage)
Max. Current Efficiency 5.27 cd/A
Device structure ITO/MeO-TPD*:F4-TCNQ (100 nm)/Spiro-TAD (10 nm)/TCTA:Ir(ppy)3 (5 nm)/BPhen (10 nm)/Cs-doped BPhen (50 nm)/Al [5]
Colour Green green light emitting device
Max. EQE 13.7%
Max. Power Efficiency 52 lm W1
Device structure ITO/0.4 wt% F4TCNQ doped α NPD (30 nm)/ 5 wt% Ir(ppy)3 doped CBP (50 nm)/BPhen (30 nm)/20 wt% TCNQ mixed BPhen (1.5 nm)/Al [6]
Colour Green green light emitting device
Luminance@15 V 1,320 cd/m2 
Power Efficiency@14 V 56.6 lm W1  
Current Efficiency@14 V 23.17 cd/A
Device structure ITO/F4TCNQ (3 nm)/MeO-Spiro-TPD (27 nm)/CBP + BCzVbi* (50 nm)/BPhen (10 nm)/TCNQ mixed BPhen (1.5 nm)/Al [7]
Colour Red red light emitting device
Luminance@ 10 mA/cm2 1,790 cd/m2
Power Efficiency@ 10 mA/cm2 4.65 lm W1
Current Efficiency@ 10 mA/cm2 18.0 cd/A
Device structure ITO/MeO-TPD: F4-TCNQ (100 nm, 4%)/NPB (15 nm)/CBP: (MPPZ)2Ir(acac) (25 nm, 8.5%)/CBP (4 nm)/CBP: DSA-ph (20 nm, 3%)/ETLs (30 nm)/LiF (1 nm)/Al (200 nm) [8]
Colour White white light emitting device
Max. Luminance 97,067 cd/m2
Max. Current Efficiency 42.8 cd/A
Max. Power Efficiency 21.1 lm W1
Device structure ITO (120 nm)/0.4 wt. % F4-TCNQ:α-NPD (35 nm)/5 wt. % BCzVBi:CBP (20 nm)/ 5 wt. % Ir(ppy)3:CBP (4 nm)/0.75 wt. % Ir(btp)2acac:CBP (12.5 nm)/BAlq (30 nm)/LiF (1 nm)/Al (150 nm) [9]
Colour White white light emitting device
Max. Luminance 106,100 cd/m2
Max. Current Efficiency 50.3 cd/A
Max. Power Efficiency 26.3 lm W1
Device structure ITO/PTAA/ CH3NH3PbI3/PCBM/C60/BCP/Ag [10] ITO/PTAA:F4TCNQ (1 wt%)/CH3NH3PbI3/PCBM/C60/BCP/Ag [10]
Jsc (mA cm-2) 21.6 21.6
Voc (V) 1.05 1.09
FF (%) 65.7 74
PCE (best) 14.8 17.5

*For chemical structure information, please refer to the cited references.

Characterisation


dsc trace of f4tcnq
DSC trace of 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ).

Pricing


 Grade Order Code Quantity Price
Sublimed (>99% purity) M351 100 mg £105
Sublimed (>99% purity) M351 250 mg £230
Sublimed (>99% purity) M351 500 mg £360
Sublimed (>99% purity) M351 1 g £580
Sublimed (>99% purity) M351 5 g £2400
Sublimed (>99% purity) M351 10 g £4200

Literature and Reviews


  1. Low-voltage organic electroluminescent devices using pin structures, J. Huang et al., Appl. Phys. Lett. 80, 139 (2002); https://dx.doi.org/10.1063/1.1432110.
  2. Molecular Doping Enhances Photoconductivity in Polymer Bulk Heterojunction Solar Cells, Y. Zhang et al., Adv. Mater., 25, 7038–7044 (2013).
  3. Band Gap Opening of Bilayer Graphene by F4-TCNQ Molecular Doping and Externally Applied Electric Field, X. Tian et al., J. Phys. Chem. B, 114 (35), 11377–11381 (2010).
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