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Product Code M381-5g
Price $263 ex. VAT

Alq3, effective electron-transport material for OLEDs

High thermal stability and quantum yield of fluorescence


Tris(8-hydroxyquinoline)aluminum(III), commonly known as Alq3 (CAS number 2085-33-8), is widely used in organic light-emitting diodes (OLEDs) as an electron-transport material (ETM) and emitting layer material (ELM) due to its high thermal stability, high quantum yield of fluorescence and high electron-transport ability.

Ossila's Alq3 was used in the high-impact paper (IF 30.85)

Alq3 from Ossila was used in the high-impact paper (IF 30.85), Engineering Band-Type Alignment in CsPbBr3 Perovskite-Based Artificial Multiple Quantum Wells, K. Lee et al., Adv. Mater., 33 (17), 2005166 (2021); DOI: 10.1002/adma.202005166.

Alq3 as the electron-transport and emitting layer material was the first efficient low molecular weight OLED reported by Tang in 1987 [1]. Since then, metaloquinolates have become the focus of new electroluminescent materials research, with Alq3 being the most studied.

General Information


Full name Tris(8-hydroxyquinoline)aluminum
Synonyms
  • Alq3 
  • 8-Hydroxyquinoline aluminum salt
  • Aluminum 8-hydroxyquinolinate
  • Aluminum oxinate
  • Tris(8-hydroxyquinolinato)aluminum
CAS number 2085-33-8 
Molecular formula C27H18AlN3O3
Molecular weight 459.43 g/mol
Absorption λmax 259 nm (in THF)
Fluorescence λmax 512 nm (in THF)
HOMO / LUMO HOMO 5.62 eV      LUMO 2.85 eV
Classification / Family Organometallic, Electron transport layer (ETL), Electron injection layer (EIL), OLED emitting layer (ELM)

Product Details


Purity >99% (sublimed)
Melting point 415.4 °C (DSC onset)
Appearance Yellow-greenish powder

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials page.

Chemical Structure


Chemical structure of Alq3
Chemical structure of tris-(8-hydroxyquinoline)aluminum (Alq3)

Device Structure(s)


Device structure ITO/ NPB(60 nm)/Alq3:DCM(7nm)/BCP(12 nm)/ Alq3(36nm)/ MgAg(200 nm) [2]
Colour Red red light emitting device
Max. Luminance 1, 000 cd/m2
Max. Current Efficiency 5.66 cd/A 
Device structure  ITO/m-MTDATA:MoOx (3:1, 15 nm)/m-MTDATA (30 nm)/NPB (5 nm)/Alq3 (50 nm)/BPhen (10 nm)/LiF (1 nm)/Al (100 nm) [3]
Colour Green green light emitting device
Max. Luminance 42,090 cd/m2 
Max. Current Efficiency 4.77 cd/A
Max. Power Efficiency 3.5 lm W1
Device structure  ITO/α-NPD* (50 nm)/7%-Ir(ppy)3:CBP (20 nm)/BCP (10 nm)/Alq3 (40 nm)/Mg–Ag (100 nm)/Ag (20 nm) [4]
Colour Green green light emitting device
Max EQE (12.0±0.6)%
Max. Powder Efficiency (45±2) lm W1
Device structure ITO/NPB (30 nm)/NPB: DCJTB: C545T* (10 nm)/NPB (4 nm)/DNA (8 nm)/(BCP) (9 nm)/Alq3 (30 nm)/LiF (1 nm)/Al (100 nm) [5]
Colour White white light emitting device
Max. Luminance  13,600 cd/m2
Max. Current Efficiency 12.3 cd/A
Max. Power Efficiency 4.4 lm W1
Device structure ITO/2-TNATA:33% WO3 (100 nm)/NPB (10 nm)/Alq3 (30 nm)/Bphen (20 nm)/BPhen: 2% Cs (10 nm)/Al (150 nm) [6]
Colour Green green light emitting device
Operating Voltage for 100 cd/m2 3.1 V
Current Efficiency for 20 mA/cm2 4.4 cd/A
Power Efficiency for 20 mA/cm2 3.3 lm W1
Device structure ITO/CuPc(6.0 nm)/[NPB*(3.8 nm)/CuPc (1.5 nm)]4/NPB (15.0 nm)/Alq3 (60.0 nm)/Mg:Ag/Ag [7]
Colour Green green light emitting device
Max. Luminance 15,000 cd/m2
Max. Current Efficiency 10.8 cd/A

*For chemical structure information please refer to the cited references.

When fabricating devices, processing and handling materials in a glove box helps maintain their purity and maintain efficiency by avoiding contamination from particulates, moisture, and airborne impurities.

Characterisation


dsc-alq3

DSC trace of Tris-(8-hydroxyquinoline)aluminum (Alq3)

Pricing


Grade Order Code Quantity Price
Sublimed (>99% purity) M381 5 g £210
Sublimed (>99% purity) M381 10 g £340

MSDS Documentation


Alq3 MSDSAlq3 MSDS sheet

Literature and Reviews


  1. Organic electroluminescent diodes, C. Tang et al., Appl. Phys. Lett. 51, 913 (1987)
  2. High-efficiency red electroluminescence from a narrow recombination zone confinedby an organic double heterostructure, Z. Xie et al., Appl. Phys. Lett., 79, 1048 (2001); doi: 10.1063/1.1390479 .
  3. Very low turn-on voltage and high brightness tris-(8-hydroxyquinoline) aluminumbasedorganic light-emitting diodes with a MoOx p-doping layer, G. Xie et al., Appl. Phys. Lett., 92, 093305 (2008); doi: 10.1063/1.2890490.
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