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Product Code M222-100mg
Price $420

High Quality Semiconducting Polymer

Improved extraction efficiencies in OPV devices


Product Information | MSDS | Pricing | Literature and Reviews


PFN (CAS number: 673474-74-3) is a conjugated polyelectrolyte used as an electron-interface in OPV devices to improve extraction efficiencies. Currently producing power conversion efficiencies of up to 7.1% at Ossila, with further increases expected from additional optimization and up to 9.2% reported in the literature [1-3].

Good 673474-74-3 solubility

Good Solubility

In polar solvents with small amount of acetic acid

Cathode interlayer molecule

Cathode Interlayer Molecule

For high efficiency OPVs

Improve extraction efficiency

Improve Extraction Efficiency

Conjugated polyelectrolyte

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PFN from Ossila was used in a high-impact paper (IF 30.85)

PFN from Ossila was used in the high-impact paper (IF 30.85), All-Organic and Fully-Printed Semitransparent Photodetectors Based on Narrow Bandgap Conjugated Molecules, G. Pace et al., Adv. Mater., 26, 6773-6777 (2014); DOI: 10.1002/adma.201402918.

Product Information


Full Name Poly [(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9–dioctylfluorene)]
Synonyms PFN, PFN-DOF
Chemical Formula (C52H70N2)n
CAS Number 673474-74-3

Chemical Structure


Chemical structure of PFN
Chemical structure of PFN, CAS no. 673474-74-3

Batch Information


Batch Mw Mn PDI Stock info
M222 N/A N/A N/A Low stock
M0221A1 85,000 44,973 1.89 In stock

Usage details


Inverted OPV devices were made using the architecture shown below with PFN as an electron-interface and PTB7:PC70BM in a 1:1.5 blend ratio. Ossila's pixelated cathode substrate pack (S213) provided the device components.

Glass / ITO (100 nm) / PFN (5.5 to 10 nm) / PTB7:PC70BM (90 nm) / MoOx (15 nm) / Al (100 nm)

The substrate cleaning and PFN spin-coating were performed under ambient conditions with all other steps performed in an N2 glove box until encapsulation had been completed (measurement performed under ambient conditions).

The active layer thickness, MoOx thickness, cathode metal (Ag or Al), PFN solution concentration, PFN drying/baking have not been fully optimized. As such, we expect further gains to be made with additional engineering work. However, for the devices made in this fabrication, a peak efficiency of 7.1% was achieved.

Efficiency for different PTB7 spin speeds - Standard architecture Jsc for different PTB7 spin speeds - Standard architecture Voc for different PTB7 spin speeds - Standard architecture Fill factor for different PTB7 spin speeds - Standard architecture
PCE, Jsc, Voc and FF for different spin speeds. Data shown is averaged with max and min overlaid with filled circles.
PTB7 JV Curve for inverted architecture
The JV curve for the best performing device.

Note that some burn-in was observed (i.e. a small improvement in device performance after a few seconds under the solar simulator) and the variability of the devices is currently slightly higher than for other interlayers (average PCE of 6.7%). We expect the uniformity to improve with further improvements in PFN processing, in particular the optimization of drying conditions to ensure that the acetic acid is fully removed prior to active layer deposition.

MSDS Documentation


PFN MSDSPFN MSDS sheet

Literature and References


  1. Enhanced power-conversion efficiency in polymer solar cells using an inverted device structure, Z. He et al., Nature Photonics, 6, 591–595 (2012)
  2. Simultaneous Enhancement of Open-Circuit Voltage, Short-Circuit Current Density, and Fill Factor in Polymer Solar Cells, Z. He et al., Advanced Materials, 23, 4636–4643 (2011)
  3. Investigation of a Conjugated Polyelectrolyte Interlayer for Inverted Polymer:Fullerene Solar Cells, R. Xia et al., Advanced Energy Materials, (2013)

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