Highly Efficient MR-TADF Host
High purity D-A type MR-TADF host material, sublimed ≥99%
Specifications | MSDS | Literature and Reviews
DOBNA-OAr, featuring an oxygen-bridged triaryl-boron 5,9-dioxa-13b-boranaphtho[3,2,1-de]anthracene (DOBNA) electron acceptor core, is a MR-TADF host material for highly efficient TADF and hyperfluorescence (HF) OLED devices. DOBNA-OAr shows MR-TADF characteristics in the violet region with emission at 388 nm and a FWHM of 34 nm in toluene.
Due to the suppression of nonradiative decay processes by engaging DOBNA-OAr as the MR-TADF host, the photoluminescence quantum yield (PLQY) of n-DABNA (1 wt.%) in the doped film reaches to 90%. The TADF-OLED based on n-DABNA as the guest emitter and DOBNA-OAr as the host shows deep-blue electroluminescence (469 nm) with CIE coordinates of (0.12, 0.11), and FWHM of 18 nm . Moreover, the n-DABNA-based device achieves a notably high EQEmax of 34.4% along with suppressed efficiency roll-off, 26.0% at 1,000 cd m–2. n-DABNA currently is the bench-mark for blue MR-TADF materials and as the terminal emitter in state-of-the-art HF-TADF devices.
General Information
CAS Number | N/A |
---|---|
Chemical Formula | C45H33BO3 |
Molecular Weight | 633.26 g/mol |
Absorption | λmax 372 nm (in toluene) |
Photoluminescence | λem 388 nm (in toluene) |
HOMO/LUMO | HOMO = - 6.4 eV, LUMO = - 3.3 eV |
Synonyms | 7-((2'-methyl-[1,1'-biphenyl]-3-yl)oxy)-3,11-di-o-tolyl-5,9-dioxa-13b-boranaphtho[3,2,1-de]anthracene |
Classification or Family | 5,9-dioxa-13b-boranaphtho[3,2,1-de]anthracene (DOBNA) derivative, MR-TADF host, Sublimed materials |
Product Details
Purity | Sublimed ≥99% |
---|---|
Melting point | n.a. |
Appearance | White to light-yellow to yellow powder/crystals |
Chemical Structure

Device Structure(s)
Device Structure | ITO (50 nm)/NPD (40 nm)/TCTA (15 nm)/mCP (15 nm)/1.0 wt.% n-DABNA:DOBNA-OAr (20 nm)/mSiTrz (10 nm)/BPy-TP2 (20 nm)/LiF (1 nm)/Al (100 nm) [2] |
---|---|
Color |
![]() |
CIE Coordinates | (0.119, 0.123) |
FWHM | 18 nm |
Turn-on Voltage (Von) | 3.0 eV |
LT50 | 242 h |
Max Current Efficiency | 31.1 cd A-1 |
Max Power Efficiency | 33.6 lm W-1 |
Max EQE | 33.8% |
Device Structure | ITO (50 nm)/NPD (40 nm)/TCTA (15 nm)/mCP (15 nm)//1.0 wt.% n-DABNA-Az3:DOBNA-OAr (20 nm)/mSiTrz (10 nm)/BPy-TP2 (20 nm)/LiF (1 nm)/Al (100 nm) [2] |
---|---|
Color |
![]() |
CIE Coordinates | (0.136, 0.100) |
FWHM | 19 nm |
Turn-on Voltage (Von) | 3.0 eV |
LT50 | 315 h |
Max Current Efficiency | 29.9 cd A-1 |
Max Power Efficiency | 32.0 lm W-1 |
Max EQE | 33.0% |
MSDS Documentation
Literature and Reviews
- Y. Kondo et al. (2019); Narrowband deep-blue organic light-emitting diode featuring an organoboron-based emitter, Nat. Photonics, 13, 678–682; DOI: 10.1038/s41566-019-0476-5.
- M. Mamada et al. (2024); Efficient Deep-Blue Multiple-Resonance Emitters Based on Azepine-Decorated ν-DABNA for CIEy below 0.06, Adv. Mater., 36 (30), 2402905; DOI: 10.1002/adma.202402905.
- Y. Wu et al. (2024); Nitrogen Effects Endowed by Doping Electron-Withdrawing Nitrogen Atoms into Polycyclic Aromatic Hydrocarbon Fluorescence Emitters, J. Am. Chem. Soc., 146, 23, 15977–15985; DOI: 10.1021/jacs.4c02872.