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Gate Deposition Mask, High Density

Substrates and Fabrication


Product Code E336-SPC
Price $325 ex. VAT

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An evaporation mask for deposition of gate contacts, for use with the high density OFET system. A 100 μm standoff-spacer ensures that the mask does not touch the substrate while still enabling good deposition resolution.

Mask with direct contact (no spacer): For sputtering and other non-directional deposition systems, as well as for thermal deposition systems with oblique angles or a very short throw, we recommend the use of the direct contact mask to get well-defined edges.

Mask with 100 μm spacer: For normal thermal evaporation systems we recommend the use of masks with the 100 μm spacer to help avoid scratches and allow better out-gassing.

Datasheet

Product Code E336 E337
Related shadow mask E321 and E322 E323
Size 75 mm x 75 mm
Thickness 1.7mm without spacer, 1.8mm with spacer (exc. bolts)
Material Stainless steel
Capacity 12 substrates
High density OFET gate mask (dimensions)
Dimensioned diagram of the high density linear OFET gate mask (E336).

 

High density OFET evaporation gate mask (photo)
Optical image of the high density OFET gate mask (E336).

 

High density interdigitated OFET evaporation gate mask (technical drawing)
Dimensioned diagram of the high density interdigitated OFET gate mask (E337).

 

High density interdigitated evaporation gate mask (dimensions)
Dimensioned diagram of the substrate sections of the high density interdigitated OFET gate mask (E337).

To the best of our knowledge the information provided here is accurate. The values provided are typical at the time of manufacture and may vary over time and from batch to batch. Products may have minor cosmetic differences (e.g. to the branding) compared to the photos on our website. All products are for laboratory and research and development use only.

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