Gate Deposition Mask, High Density
Substrates and Fabrication
High Density Gate Deposition Mask
Enabling accurate deposition resolution
An evaporation mask for deposition of gate contacts, for use with the high density OFET system. A 100 μm standoff-spacer ensures that the mask does not touch the substrate while still enabling good deposition resolution.
Mask with direct contact (no spacer): For sputtering and other non-directional deposition systems, as well as for thermal deposition systems with oblique angles or a very short throw, we recommend the use of the direct contact mask to get well-defined edges.
Mask with 100 μm spacer: For normal thermal evaporation systems we recommend the use of masks with the 100 μm spacer to help avoid scratches and allow better out-gassing.
Datasheet
| Product Code | E336 | E337 |
|---|---|---|
| Related shadow mask | E321 and E322 | E323 |
| Size | 75 mm x 75 mm | |
| Thickness | 1.7mm without spacer, 1.8mm with spacer (exc. bolts) | |
| Material | Stainless steel | |
| Capacity | 12 substrates | |
