Gate Deposition Mask - High-Density OFETs
An evaporation mask for deposition of gate contacts, for use with the high density OFET system. A 200 μm standoff-spacer ensures that the mask does not touch the substrate while still enabling good deposition resolution.
Mask with direct contact (no spacer): For sputtering and other non-directional deposition systems, as well as for thermal deposition systems with oblique angles or a very short throw, we recommend the use of the direct contact mask to get well-defined edges.
Mask with 200 μm spacer: For normal thermal evaporation systems we recommend the use of masks with the 200 μm spacer to help avoid scratches and allow better out-gassing.
|Related shadow mask||E321 and E322||E323|
|Size||75 mm x 75 mm|
|Thickness||2 mm (exc. bolts)|
To the best of our knowledge, the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.