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Product Code M2183A1-250mg
Price £280 ex. VAT

NBPhen, EIL and HBL material for OLEDs and photovoltaic devices

High-purity (>99.0%) and available online for priority dispatch


NBPhen, full name 2,9-Dinaphthalen-2-yl-4,7-diphenyl-1,10-phenanthroline, is one of the close relatives of BPhen, which is used in OLEDs and photovoltaic devices as an electron-injection layer or hole-blocking layer material. Due to its low evaporation temperature and air stability, caesium azide (CsN3) doped NBphen has also been demonstrated as an efficient electron-injection layer (EIL) capable of replacing lithium fluoride (LiF) in such devices.

OLEDs utilising CsN3 -doped NBPhen as EIL exhibit significantly improved current density-luminance-voltage characteristics.

General Information


CAS number 1174006-43-9
Full name 2,9-Dinaphthalen-2-yl-4,7-diphenyl-1,10-phenanthroline
Chemical formula C44H28N2
Molecular weight 584.71 g/mol
Absorption λmax 395 nm in THF
Fluorescence λem 412 nm in THF
HOMO/LUMO HOMO = 5.8 eV, LUMO = 2.6 eV [1]
Synonyms 2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline
Classification / Family Phenanthroline derivatives, Organic electronics, Electron-injection layer materials (EIL), Hole-blocking layer materials (HBL), TADF materials, Sublimed materials.

Product Details


Purity Sublimed: >99% (HPLC)
Melting point TGA: >340 °C (0.5% weight loss)
Appearance Off-white powder/crystals

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the sublimed Materials.

Chemical Strucutre


NBPhen chemical structure
Chemical structure of NBPhen

Device Structure(s)


Device structure ITO (100 nm)/PEDOT:PSS (35 nm)/PLEXCORE UT-314* (20 nm)/PYD2:Cu(I)-iBuPyrPHOS* 1:1 (30 nm)/T2T (20 nm)/NBPhen (30 nm)/LiF (1 nm)/Al [1]
Colour Yellow yellow light emitting device
Max. EQE 11.9%
Max. Current Efficiency 36.0 cd/A
Device structure ITO/HATCN (10 nm)/NPB (30 nm)/TCTA (10 nm)/6 wt% PQ2Ir:TCTA:T2T (4:6) (25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [2]
Colour Orange orange light emitting device
Max. EQE 19.6%
Max. Current Efficiency 35.5 cd/A
Device structure ITO/HATCN (10 nm)/NPB (30 nm)/BCzPh (10 nm)/6 wt% PQ2Ir:BCzPh:T2T (4:6) (25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [2]
Colour Red red light emitting device
Max. EQE 20.6%
Max. Current Efficiency 36.0 cd/A
Device structure ITO/MO3 (5 nm)/NPB (75 nm)/C545T:Alq3 (30 nm)/NBPhen (25 nm)/CsN3:NBPhen (5 nm)/Al [3]
Colour Green green light emitting device
Max. Luminance 60,000 cd/m2
Max. Current Efficiency 10.4 cd/A
Device structure ITO/HATCN (5 nm)/TAPC (30 nm)/TCTA (10 nm)/TRZ-p-ACRSA*:PO-01 (6 wt%, 25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [4]
Colour Yellow yellow light emitting device
Max. Power Efficiency 115.2 lm W-1
Max. EQE 25.5%
Max. Current Efficiency 80.6 cd/A
Device structure ITO/HATCN (5 nm)/TAPC (30 nm)/TCTA (10 nm)/TRZ-m-ACRSA*:PO-01 (6 wt%, 25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [4]
Colour Yellow yellow light emitting device
Max. Power Efficiency 102.6 lm W-1
Max. EQE 25.2%
Max. Current Efficiency 79.8 cd/A

*For chemical structure information, please refer to the cited references.

MSDS Documentation


NBPhen MSDSNBPhen MSDS sheet

Pricing


Grade Order Code Quantity Price
Sublimed (>99% purity) M2183A1 250 mg £280
Sublimed (>99% purity) M2183A1 500 mg £460
Sublimed (>99% purity) M2183A1 1 g £740

Literature and Reviews


  1. Highly Effcient Organic Light-Emitting Diode Using A Low Refractive Index Electron Transport Layer, A. Salehi et al., Adv. Optical Mater., 170019 (2017); DOI: 10.1002/adom.201700197.
  2. Predicting Operational Stability for Organic Light-Emitting Diodes with Exciplex Cohosts, Z, Wang et al., Adv. Sci., 6, 1802246 (2019); DOI: 10.1002/advs.201802246.
  3. The utilization of low-temperature evaporable CsN3-doped NBphen as an alternative and efficient electron-injection layer in OLED, X. Chu et al., Phys. Status Solidi A 211, 7, 1605–1609 (2014); DOI: 10.1002/pssa.201431090.
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