NBPhen

CAS Number 1174006-43-9

High Purity Sublimed Materials, Materials, OLED Materials, Semiconducting Molecules, TADF Materials

NBPhen, EIL and HBL material for OLEDs and photovoltaic devices

High-purity and available online for priority dispatch, 2,9-Dinaphthalen-2-yl-4,7-diphenyl-1,10-phenanthroline, CAS No. 1174006-43-9, Sublimed ≥99.0%

NBPhen is one of the close relatives of BPhen which is used in OLEDs and photovoltaic devices as an electron-injection layer or hole-blocking layer material. Due to its low evaporation temperature and air stability, caesium azide (CsN₃) doped NBphen has also been demonstrated as an efficient electron-injection layer (EIL) capable of replacing lithium fluoride (LiF) in such devices.

OLEDs utilising CsN₃-doped NBPhen as EIL exhibit significantly improved current density-luminance-voltage characteristics.

General Information

CAS number	1174006-43-9
Full name	2,9-Dinaphthalen-2-yl-4,7-diphenyl-1,10-phenanthroline
Chemical formula	C₄₄H₂₈N₂
Molecular weight	584.71 g/mol
Absorption	λ_max 395 nm in THF
Fluorescence	λ_em 412 nm in THF
HOMO/LUMO	HOMO = 5.8 eV, LUMO = 2.6 eV [1]
Synonyms	2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline
Classification / Family	Phenanthroline derivatives, Organic electronics, Electron-injection layer materials (EIL), Hole-blocking layer materials (HBL), TADF materials, Sublimed materials.

Product Details

Purity	Sublimed: >99% (HPLC)
Melting point	TGA: >340 °C (0.5% weight loss)
Appearance	Off-white powder/crystals

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the sublimed Materials.

Chemical Strucutre

nbphen, 1174006-43-9 — Chemical structure of 2,9-Dinaphthalen-2-yl-4,7-diphenyl-1,10-phenanthroline (NBPhen), CAS 1174006-43-9

Device Structure(s)

Device structure	ITO (100 nm)/PEDOT:PSS (35 nm)/PLEXCORE UT-314* (20 nm)/PYD2:Cu(I)-iBuPyrPHOS* 1:1 (30 nm)/T2T (20 nm)/NBPhen (30 nm)/LiF (1 nm)/Al [1]
Colour	Yellow
Max. EQE	11.9%
Max. Current Efficiency	36.0 cd/A

Device structure	ITO/HATCN (10 nm)/NPB (30 nm)/TCTA (10 nm)/6 wt% PQ2Ir:TCTA:T2T (4:6) (25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [2]
Colour	Orange
Max. EQE	19.6%
Max. Current Efficiency	35.5 cd/A

Device structure	ITO/HATCN (10 nm)/NPB (30 nm)/BCzPh (10 nm)/6 wt% PQ2Ir:BCzPh:T2T (4:6) (25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [2]
Colour	Red
Max. EQE	20.6%
Max. Current Efficiency	36.0 cd/A

Device structure	ITO/MO₃ (5 nm)/NPB (75 nm)/C545T:Alq₃ (30 nm)/NBPhen (25 nm)/CsN₃:NBPhen (5 nm)/Al [3]
Colour	Green
Max. Luminance	60,000 cd/m²
Max. Current Efficiency	10.4 cd/A

Device structure	ITO/HATCN (5 nm)/TAPC (30 nm)/TCTA (10 nm)/TRZ-p-ACRSA:PO-01 (6 wt%, 25 nm)/T2T (10 nm)/NBPhen* (40 nm)/LiF (1 nm)/Al (100 nm) [4]
Colour	Yellow
Max. Power Efficiency	115.2 lm W^-1
Max. EQE	25.5%
Max. Current Efficiency	80.6 cd/A

Device structure	ITO/HATCN (5 nm)/TAPC (30 nm)/TCTA (10 nm)/TRZ-m-ACRSA:PO-01 (6 wt%, 25 nm)/T2T (10 nm)/NBPhen* (40 nm)/LiF (1 nm)/Al (100 nm) [4]
Colour	Yellow
Max. Power Efficiency	102.6 lm W^-1
Max. EQE	25.2%
Max. Current Efficiency	79.8 cd/A

*For chemical structure information, please refer to the cited references.

MSDS Documentation

NBPhen MSDS sheet

Pricing

Grade	Order Code	Quantity	Price
Sublimed (>99% purity)	M2183A1	250 mg	£280
Sublimed (>99% purity)	M2183A1	500 mg	£460
Sublimed (>99% purity)	M2183A1	1 g	£740

Literature and Reviews

Highly Effcient Organic Light-Emitting Diode Using A Low Refractive Index Electron Transport Layer, A. Salehi et al., Adv. Optical Mater., 170019 (2017); DOI: 10.1002/adom.201700197.
Predicting Operational Stability for Organic Light-Emitting Diodes with Exciplex Cohosts, Z, Wang et al., Adv. Sci., 6, 1802246 (2019); DOI: 10.1002/advs.201802246.
The utilization of low-temperature evaporable CsN3-doped NBphen as an alternative and efficient electron-injection layer in OLED, X. Chu et al., Phys. Status Solidi A 211, 7, 1605–1609 (2014); DOI: 10.1002/pssa.201431090.

Utilizing a Spiro TADF Moiety as a Functional Electron Donor in TADF Molecular Design toward Efficient “Multichannel” Reverse Intersystem Crossing, L. Gan et al., Adv. Funct. Mater., 29, 1808088 (2019); DOI: 10.1002/adfm.201808088.