Bis(10-hydroxybenzo[h]quinolinato)beryllium, known as Bebq2, is the brother of Bepp2 in the Beryllium complex family. It is also a blue-fluorescence emitter with excellent charge transport ability.
When compared with Alq3 as an electron-transport material, Bebq2 was proven to be superior, even though the ionisation potential and optical band gap of Bebq2 (5.5 eV and 2.7 eV respectively) and Alq3 (5.6 eV and 2.8 eV respectively) are almost the same. The best use for Bebq2 is not as an emitting-layer material or a host material (even though it is a widely used host material), but as an electron-transport material .
|Molecular weight||397.43 g/mol|
|Absorption||λmax 406 nm|
|Fluorescence||λem 440 nm (DCM)|
|HOMO/LUMO||HOMO = 5.5 eV, LUMO = 2.8 eV|
|Classification / Family||Blue emitter, Electron-transport layer materials (ETL), Hole-blocking layer materials (HBL), Organic light-emitting diode (OLED), Organic electronics|
|Thermogravimetric Analysis (TGA)||434 °C (5% weight loss)|
|Differential Scanning Calorimetry (DSC)||364.9 °C|
*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials for OLED devices page.
|Device structure||ITO/DNTPD (40 nm)/Bebq2:Ir(piq)3 (50 nm, 4 wt%)/LiF (0.5 nm)/Al (100 nm) |
|Max. Current Efficiency||9.38 cd/A|
|Max. Power Efficiency||11.72 lm W−1|
|Device structure||ITO/NPB (40 nm)/Bebq2:1 wt% Ir(piq)3 (30 nm)/Bebq2 (20 nm)/LiF (0.5 nm)/Al (100 nm) |
|Max. Current Efficiency||12.71 cd/A|
|Max. Power Efficiency||16.02 lm W−1|
|Device structure||ITO/MeO-TPD: F4-TCNQ (50 nm, 4 wt%)/NPB (20 nm)/MADN:DSAph (25nm, 7 wt%)/Bebq2 (30 nm)/LiF (1 nm)/Al (200 nm) |
|Max. Luminance||70,645 cd/m2|
|Max. Current Efficiency||12.7 cd/A|
|Max. Power Efficiency||9.1 lm W−1|
|Device structure||Ag (100 nm)/ITO (10 nm)/DNTPD (30 nm)/NPB (44 nm)/Bebq2:3 wt% Ir(mphmq)2(acac) (20 nm)/Bphen (31 nm)/Bphen: 5 wt% Li (10 nm)/HATCN (7 nm)/NPB (63 nm)/Bebq2: 3 wt% Ir(mphmq)2(acac) (20 nm)/Bphen (40 nm)/Liq (1 nm)/Mg:Ag (10:1; 18 nm)/NPB (60 nm) |
|Max. Current Efficiency||95.8 cd/A|
ITO/NPB (40 nm))/AND:3 wt% DPAVBi (45 nm)/Bebq2 (15 nm)/LiF (1.2 nm)/Al (100 nm) 
|EQE @ 100 cd/m2||8.32%|
Current Efficiency @
|Device structure||ITO/PEDOT:PSS (30 nm)/α-NPD (40 nm)/Bebq2:TLEC-025* (1 wt%, 35 nm)/TPBI (40 nm)/LiF (1 nm)/Al (100 nm) |
|EQE @ 100 cd/m2||17.1%|
Power Efficiency @
|13.6 lm W−1|
ITO/a-NPB:Bebq2:Ir(piq)3 (1 wt.%, 100 nm)/ LiF (0.5 nm)/Al (100 nm) 
|Max. Current Efficiency||9.44 cd/A|
|Max. Purrent Efficiency||10.62 lm W−1|
*For chemical structure information please refer to the cited references
Characterisation (TGA and DSC)
Literature and Reviews
- Influence of the Emission Site on the Running Durability of Organic Electroluminescent Devices, Y. Hamada et al., Jpn. J. Appl. Phys., 34, L824 (1995); http://iopscience.iop.org/1347-4065/34/7A/L824.
- Efficiency Control in Iridium Complex-Based Phosphorescent Light-Emitting Diodes, B. Diouf et al., Adv. Mater. Sci.&Eng., 2012, 794674 (2012); doi:10.1155/2012/794674.
- Highly Efficient Simple-Structure Red Phosphorescent OLEDs with an Extremely Low Doping Technology, W. S. Jeon et al., J. Info. Display, 10 (2), 87-91 (2009).
- Comprehensive Study on the Electron Transport Layer in Blue Flourescent Organic Light-Emitting Diodes, B. Liu et al.,ECS J. Solid Stat. Sci.& Tech., 2 (11) R258-R261 (2013).
- High efficiency red top-emitting micro-cavity organic light emitting diodes, M. Park et al., 22, (17), Optics Express, 19919 (2014), DOI:10.1364/OE.22.019919.
High-Efficiency Fluorescent Blue Organic Light-Emitting Device with Balanced Carrier Transport,
J-H. Lee et al., J. Electrochem., Soc., 154, 7, J226-J228 (2007).
- Highly Efficient and Stable Red Phosphorescent Organic Light-Emitting Diodes Using Platinum Complexes, H. Fukagawa et al., Adv. Mater., 24, 5099–5103 (2012); DOI: 10.1002/adma.201202167.
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