Spiro-TTB


Order Code: M2192B1
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Pricing

Grade Order Code Quantity Price
Unsublimed (>98% purity) M2192B1 500 mg £163.00
Unsublimed (>98% purity) M2192B1 1 g £267.00
Unsublimed (>98% purity) M2192B1 5 g £1070.00

General Information

CAS number 515834-67-0
Full name 2,2',7,7'-Tetra(N,N-di-p-tolyl)amino-9,9-spirobifluorene
Chemical formula C81H68N4
Molecular weight 1097.43 g/mol
Absorption λmax 384 nm in DCM
Fluorescence λmax 413 nm in DCM
HOMO/LUMO HOMO = 5.25 eV [1]
Classification / Family Spirofluorene derivative, Hole transport layer materials, Perovskite solar cells, Organic electronics.

Product Details

Purity Unsublimed > 98% (1H NMR)
Melting point Tg = 146 °C
Appearance Light yellow powder/crystals

 

spiro-ttb
Chemical structure of Spiro-TTB; CAS No. 515834-67-0.

 

Applications

Spiro-TTB has a spirofluorene core with four attached ditolylamine at the 2 and 7 positions of spirofluorene. Like Spiro-OMeTAD, it is electron-rich and commonly used as a hole-transport layer material in OLED, OPV, and perovskite solar cells.

Compared to Spiro-OMeTAD, Spiro-TTB is less electron-rich, with four methoxyl groups being replaced by four methyl groups. It has a deeper HOMO energy level, which gives greater VOC, thus, better device performance can be expected.

 

Device structure ITO (90 nm)/Spiro-TTB:F6-TCNNQ (4 wt.%, 10 nm)/NPB (20 nm)/NPB:Ir(MDQ)2acac (10 wt.%, 10 nm)/BAlq (65 nm)/BPhen:Cs (100 nm) [2]
Colour Red red
Max. Power Efficiency 33.3 lm W1
Max. Current Efficiency 27.7 cd/A
Max. EQE 19.5%
Device structure ITO (90 nm)/Spiro-TTB:F6-TCNNQ (4 wt.%, 10 nm)/NPB (20 nm)/TCTA:Ir(ppy)2acac (8 nm)/TPBi:Ir(ppy)2acac (12 nm)/BAlq (50 nm)/BPhen:Cs (100 nm) [2]
Colour Green green
Max. Power Efficiency 77.0 lm W1
Max. Current Efficiency 54.4 cd/A
Max. EQE 19.7%
Device structure ITO/NPB (75 nm)MoO3 (2 nm)/Au (2 nm)/Ag (6 nm)/Spiro-TTB:F6-TCNNQ (2 wt.%, 10 nm)/NPB (10 nm)/NPB:Ir(MDQ)2acac (10 wt.%, 20 nm)/BAlq (10 nm)/BPhen:Cs (85 nm)/Ag (100 nm) [3]
Colour Red red
Max. EQE 39.6%

*For chemical structure information, please refer to the cited references

 

Literature and Reviews

  1. Minimal Effect of the Hole-Transport Material Ionization Potential on the Open-Circuit Voltage of Perovskite Solar Cells, R. Belisle et al., ACS Energy Lett., 1, 556−560 (2016); DOI: 10.1021/acsenergylett.6b00270.
  2. Alternative p-doped hole transport material for low operating voltage and high efficiency organic light-emitting diodes, C. Murawski et al, Appl. Phys. Lett. 105, 113303 (2014); doi: 10.1063/1.4896127.
  3. Coupled Optical Modeling for Optimization of Organic Light-Emitting Diodes with External Outcoupling Structures, M. Kovačič et al., ACS Photonics 2018, 5, 422−430 (2018); DOI: 10.1021/acsphotonics.7b00874.
  4. Comparison of Charge-Carrier Transport in Thin Films of Spiro-Linked Compounds and Their Corresponding Parent Compounds, T. Saragi et al., Adv. Funct. Mater., 16, 966–974 (2006); DOI: 10.1002/adfm.200500361.

 


To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.