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Tungsten Disulfide (WS2) Monolayer Film CAS 12138-09-9
Product Code M2171F11-1EA
Price £420 ex. VAT
£ GBP

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High purity tungsten disulfide monolayer film

For applications in electronic and optoelectronic devices

Tungsten disulfide (WS2, CAS number 12138-09-9) monolayer films supersede MoS2 with their superior optical properties, as measured by photoluminescent quantum yield (PLQY) and line-widths. With even larger spin-orbit coupling and nearly three times larger valence band splitting, WS2 monolayer films may exhibit larger band edge spin splittings, stronger valley-Hall effect, and magnetic field effects for optoelectronic and spintronic functionalities.

High Purity Tungsten Disulfide

High Purity

>99% Tungsten Disulfide Purity

Worldwide shipping for Tungsten Disulfide

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Low Cost 12138-09-9

Low Cost

Low Cost Tungsten Disulfide

Applications of Tungsten Disulfide

Applications

Applications in electronic and optoelectronic devices

Applications

Tungsten disulfide monolayer films show a much higher photoluminescence efficiency and narrower emission line-width than MoS2. Monolayer WS2 films have been widely used in electronic and optoelectronic devices, such as in photovoltaic, FETs, photodetectors, and valleytronic applications.

Synthesis

High-quality tungsten disulfide monolayer films are grown directly on the substrates (sapphire) by the chemical vapour deposition (CVD) method.

Usage

WS2 monolayer films can be used in research purposes such as microscopic analysis, photoluminescence, and Raman spectroscopy studies. Monolayer WS2 films can also be transferred to other substrates.

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Technical Data

CAS Number 12138-09-9
Chemical Formula WS2
Molecular Weight 247.97 g/mol
Bandgap 1.4 - 2.01 eV
Synonyms Tungsten sulphide, Tungsten sulfide, Tungsten(IV) sulfide
Classification / Family Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science

Product Details

Substrate Sapphire
Product Code M2171F11
Size 1 cm × 1 cm*
Growth Method CVD synthesis
Appearance Transparent
Purity >99%
Transparency >97%
Coverage >95%
Number of Layers 1
Sheet Resistance N/A
Transfer Method Directly grown
Substrate Thickness 300 µm

*Other sizes available: up to 2 cm × 2 cm or 2 inches in diameter.

High-quality tungsten disulfide (WS2) monolayer films are available on Sapphire as standard. Different substrates of monolayer WS2 films, including SiO2/Si, Glass, Silicon and Quartz are also available via custom order. 

Discontinuous isolated triangular crystals (crystal islands) films are also available via custom request. Please contact us for more information regarding custom products.

    MSDS Document

    Tungsten Disulfide Monolayer Film MSDSTungsten disulfide monolayer film

    Pricing Table

    Product Code Substrate Size Quantity (EA) Price
    M2171F11 Sapphire 1 cm × 1 cm 1 £420

    Literature and Reviews

    • Synthesis and Optical Properties of Large-Area Single-Crystalline 2D Semiconductor WS 2 Monolayer from Chemical Vapor Deposition, C. Cong et al., Adv. Optical Mater., 2, 131–136 (2014); DOI: 10.1002/adom.201300428.
    • Large-area synthesis of monolayer WS2 and its ambient-sensitive photo-detecting performance, C. Lan et al, Nanoscale, 7, 5974 (2015); DOI: 10.1039/c5nr01205h.
    • Electronic properties of WS, monolayer films, A. Klein et al., Thin Solid Films, 380, 221-223 (2000); DIO: 10.1016/S0040-6090(00)01510-8.
    • Extraordinary Room-Temperature Photoluminescence in Triangular WS2 Monolayers, H. Gutiérrez et al., Nano Lett., 13 (8), 3447–3454 (2013); DOI: 10.1021/nl3026357.
    • Enhanced Photoluminescence of Monolayer WS2 on Ag Films and Nanowire–WS2–Film Composites, F. Cheng et al., ACS Photonics, 4 (6), 1421–1430 (2017); DOI: 10.1021/acsphotonics.7b00152.
    • Controlled Growth of High-Quality Monolayer WS2 Layers on Sapphire and Imaging Its Grain Boundary, Y. Zhang et al., ACS Nano, 7 (10), 8963–8971 (2013); DOI: 10.1021/nn403454e.
    • Synthesis and Transfer of Large-Area Monolayer WS2 Crystals: Moving Toward the Recyclable Use of Sapphire Substrates, Z. Xu et al., ACS Nano, 9 (6), 6178–6187 (2015); DOI: 10.1021/acsnano.5b01480.
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