Tin Diselenide Crystal
|Size||Product code||Size description*||Quantity (EA)||Price|
*typical representative size, areas/dimensions may vary
** lead time for large crystal is 4-6 weeks
|Molecular weight||276.63 g/mol|
|Bandgap||1.07 - 1.69 eV |
|Synonyms||Tin (IV) selenide, stannic selenide|
|Classification / Family||Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science|
|Preparation||Synthetic - chemical vapour transport (CVT)|
|Electronic properties||2D semiconductor|
|Melting point||650 °C|
SnSe2 has been reported to have two different crystal structures: the 2H hexagonal phase, and the CdI2-type 1T phase. Currently, there is inconclusive evidence as to which phase is the most stable and frequently observed (2H-SnSe shown below). However, SnSe2 crystallises in the CdI2-type lattice.
Like most of the transitional metal dichalogenides (TMDCs), it is composed of two-dimensional Se-Sn-Se sheets stacked on top of one another, and characterised by strong covalent bonds between Se-Sn-Se atoms and weak interlayer Van der Waals bonds.
SnSe2 is an earth-abundant semiconductor with an n-type binary nature. The band gap of SnSe2 can be tuned from bulk to few-layer thin films with a wide electromagnetic spectrum range (from 1–2 eV). This makes it an attractive 2D material for various photoelectronic applications.
In the form of single or few-layer thin films, exfoliated tin disulfide (SnSe2) nanosheets can be used to fabricate devices such as supercapacitors, photodetectors, field-effect transistors, and Esaki tunnel diodes (when combined with phosphorene), based on exfoliated flakes.
Tin diselenide (SnSe2) is manufactured using chemical vapour transport (CVT) crystallisation, with crystals having a purity in excess of 99.999%.
Tin diselenide (SnSe2) single crystals can be used to prepare monolayer and few-layer SnSe2 by mechanical or liquid exfoliation.
Literature and Reviews
- Layer-dependent properties of SnS2 and SnSe2 novel two-dimensional materials, J. Gonzalez et al., Phys. Rev. B 94, 125443 (2016); DOI: 10.1103/PhysRevB.94.125443.
- SnSe2 field-effect transistors with high drive current, Y. Su et al., Appl. Phys. Lett., 103, 263104 (2013); doi: 10.1063/1.4857495.
- Temperature dependence of Raman shifts in layered ReSe2 and SnSe2 semiconductor nanosheets, A. Taube et al., Appl. Phys. Lett., 107, 013105 (2015); doi: 10.1063/1.4926508.
- Few-layer SnSe2 transistors with high on/off ratios, T. Pei, et al., Appl. Phys. Lett., 108, 053506 (2016); doi: 10.1063/1.4941394.
- Synthesis and characterization of SnSe2 hexagonal nanoflakes, K. Liu et al., Mater. Lett., 63, 512–514 (2009); doi:10.1016/j.matlet.2008.10.054.
- Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures, K. Aretouli et al., ACS Appl. Mater. Interfaces, 8, 23222−23229 (2016); DOI: 10.1021/acsami.6b02933.
- Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection, E. Mukhokosi et al., Sci. Rep., 7: 15215 (2017); DOI:10.1038/s41598-017-15519-x.