Tin Diselenide Powder and Crystal


Order Code: M2115C1
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Low price, high purity 2D metal tin diselenide powder and crystals

For the development of next-generation electronics, optoelectronics, and nanotechnology

Tin diselenide (SnSe2) is a family member of two-dimensional layered transition metal dichalcogenides (TMDCs) semiconductors. Within each layer, every six selenium atoms are located at the corners of an octahedron, and feature an inversion symmetry (with respect to the central tin atom). The layered structure (bound by the weak Van der Waals forces) allows exfoliation in both solid and liquid forms to peel off layers from bulk crystals or powder.

Outperforming most other 2D layered materials (such as MoS2 and WSe2), atomic layered SnSe2 exhibits high photoresponsivity and a very fast rise and fall response speed. This shows that few-layer SnSe2 is a promising active 2D material for electronic and optoelectronic applications.

SnSe2 is an earth-abundant semiconductor with an n-type binary nature. The band gap of SnSecan be tuned from bulk to few-layer thin films with a wide electromagnetic spectrum  range (from 1–2 eV). This makes it an attractive 2D material for various photoelectronic applications.

We supply low price tin diselenide in several different forms for a range of applications.

Tin diselenide powder

Tin diselenide powder

Can be used for preparation of tin diselenide nanoplates nano-platelets and ultrathinthin films

Sold by weight

≥ 99.995% purity

From £169.00

Tin diselenide crystal by size

Tin diselenide crystal

Can be used to produce single or few-layer tin diselenide sheets via mechanical or liquid exfoliation

Small (≥10mm2) or medium (≥25mm2) crystals available*

≥ 99.999% purity

From £397.00

*Typical representative size, areas/dimensions may vary

Bulk single tin diselenide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation. 

Platinum FET test chips optimized for 2D materials

Perform electrical and optical measurements without expensive lithography equipment

  • Platinum FET test chips optimized for 2D materials, just £149.00
  • Prepatterned with platinum electrodes on a Si-SiO2 substrate
  • Source-drain channel lengths ranging from 4 µm to 20 µm
  • Transfer your crystal across the channel and start measuring

Tin diselenide powder can also be used to prepare SnSe2 nanosheets and nanoparticles by liquid-exfoliation (normally assisted by sonication). 

Key Product Data

  • High purity, low price tin diselenide
  • Available as a powder or as individual crystal
  • Can be used to produce single or few-layer sheets
  • Free worldwide shipping on qualifying orders

Structure and Properties of 2D Tin Diselenide

After exfoliation of crystals or powder, tin diselenide typically has the following properties:

  • Hexagonal (2H) structure (space group: P3m1)
  • Family member of two-dimensional layered transition metal dichalcogenides (TMDCs) semiconductors
  • n-type semiconducting material
  • High photoresponsivity and a very fast rise and fall response speed

Applications of Tin Diselenide

Tin diselenide single crystals can be used to prepare monolayer and few-layer SnSe2 by mechanical or liquid exfoliation. Tin diselenide powder is suitable for liquid chemical exfoliation to prepare SnSe2 nanosheets and nanoparticles down to few-layer films. 

With a layered structure, exfoliated thin-films from tin diselenide (SnSe2) powder offer new opportunities for practical applications as the electrode material for lithium-ion batteries, electric keys, field-effect transistors, photodetectors and supercapacitors.

Technical Data

CAS number 20770-09-6-1
Chemical formula SnSe2
Molecular weight 276.63 g/mol
Bandgap 1.07 - 1.69 eV
Preparation Synthetic - Chemical Vapour Transport (CVT)
Structure Hexagonal (2H)
Electronic properties 2D semiconductor
Melting point 650 °C
Colour Metallic black
Synonyms Tin (IV) selenide, Stannic selenide
Classification / Family Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, NIR band-gap, Nano-electronics, Nano-photonics, Transistors, Photovoltaics, Materials Science

Product Details

Form Purity
Tin Diselenide Powder ≥ 99.995%
Tin Diselenide Crystal ≥ 99.999%

MSDS Documents

Tin disufide powder MSDSTin diselenide powder

Tin disufide crystal MSDSTin diselenide crystal

Structure of Tin Diselenide

SnSe2 has been reported to have two different crystal structures: the 2H hexagonal phase, and the CdI2-type 1T phase. Currently, there is inconclusive evidence as to which phase is the most stable and frequently observed (2H-SnSe shown below). However, SnSe2 crystallises in the CdI2-type lattice.

Like most of the transitional metal dichalogenides (TMDCs), it is composed of two-dimensional Se-Sn-Se sheets stacked on top of one another. Within each layer, every six selenium atoms are located at the corners of an octahedron, and feature an inversion symmetry (with respect to the central tin atom). The layered structure (bound by the weak Van der Waals forces) allows exfoliation in both solid and liquid forms to peel off layers from bulk crystals or powder.

SnSe2 crystal structure


Top and side view of single-layer tin diselenide (2H-SnSe2)

Applications of Tin Diselenide

With a layered structure, exfoliated thin-films from tin diselenide (SnSe2) powder offer new opportunities for practical applications as the electrode material for lithium-ion batteries, electric keys, field-effect transistors, photodetectors and supercapacitors.


Video by Ossila

Pricing Table (All)

Form Size/Weight* Product Code Price
Powder 500 mg M2115C1 £169.00
Powder 1 g M2115C1 £270.00
Crystal Small (≥ 10 mm2) M2115A10 £397.00 ea.
Crystal Medium (≥ 25 mm2) M2115A25 £637.00 ea.
Crystal Large (≥ 100 mm2) M2115A00 £1370.00 ea.

*typical representative size, areas/dimensions may vary

Shipping is free for qualifying orders.

Literature and Reviews

  • Layer-dependent properties of SnS2 and SnSe2 novel two-dimensional materials, J. Gonzalez et al., Phys. Rev. B 94, 125443 (2016); DOI: 10.1103/PhysRevB.94.125443.
  • SnSe2 field-effect transistors with high drive current, Y. Su et al., Appl. Phys. Lett., 103, 263104 (2013); doi: 10.1063/1.4857495.
  • Temperature dependence of Raman shifts in layered ReSe2 and SnSe2 semiconductor nanosheets, A. Taube et al., Appl. Phys. Lett., 107, 013105 (2015); doi: 10.1063/1.4926508.
  • Few-layer SnSe2 transistors with high on/off ratios, T. Pei, et al., Appl. Phys. Lett., 108, 053506 (2016); doi: 10.1063/1.4941394.
  • Synthesis and characterization of SnSe2 hexagonal nanoflakes, K. Liu et al., Mater. Lett., 63, 512–514 (2009); doi:10.1016/j.matlet.2008.10.054.
  • Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures, K. Aretouli et al., ACS Appl. Mater. Interfaces, 8, 23222−23229 (2016); DOI: 10.1021/acsami.6b02933.
  • Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection, E. Mukhokosi et al., Sci. Rep., 7: 15215 (2017); DOI:10.1038/s41598-017-15519-x.
  • SnSe2 quantum dot sensitized solar cells prepared employing molecular, metal chalcogenide as precursors, Chem. Commun., 48, 3324–3326 (2012); DOI: 10.1039/c2cc17081g.
  • Ultrathin SnSe2 Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors, X. Zhou et al., Adv. Mater., 27, 8035–8041 (2015); DOI: 10.1002/adma.201503873.
  • Designing the shape evolution of SnSe2 nanosheets and their optoelectronic properties, Y. Huang et al., Nanoscale, 7, 17375 (2015); DOI: 10.1039/c5nr05989e.
  • Field-effect transistors of high-mobility few-layer SnSe2, C. Guo et al, Appl. Phys. Lett., 109, 203104 (2016); doi: 10.1063/1.4967744.
  • Fast Photoresponse from 1T Tin Diselenide Atomic Layers, P. Yu et al., Adv. Funct. Mater., 26, 137–145 (2016); DOI: 10.1002/adfm.201503789.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.