Tin Diselenide Crystal
|Size||Product code||Size description*||Quantity (EA)||Price|
*typical representative size, areas/dimensions may vary
** lead time for large crystal is 4-6 weeks
|Molecular weight||276.63 g/mol|
|Bandgap||1.07 - 1.69 eV |
|Synonyms||Tin (IV) selenide, stannic selenide|
|Classification / Family||Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science|
|Preparation||Synthetic - chemical vapour transport (CVT)|
|Electronic properties||2D semiconductor|
|Melting point||650 °C|
SnSe2 has been reported to have two different crystal structures: the 2H hexagonal phase, and the CdI2-type 1T phase. Currently, there is inconclusive evidence as to which phase is the most stable and frequently observed (2H-SnSe shown below). However, SnSe2 crystallises in the CdI2-type lattice.
Like most of the transitional metal dichalogenides (TMDCs), it is composed of two-dimensional Se-Sn-Se sheets stacked on top of one another, and characterised by strong covalent bonds between Se-Sn-Se atoms and weak interlayer Van der Waals bonds.
SnSe2 is an earth-abundant semiconductor with an n-type binary nature. The band gap of SnSe2 can be tuned from bulk to few-layer thin films with a wide electromagnetic spectrum range (from 1–2 eV). This makes it an attractive 2D material for various photoelectronic applications.
In the form of single or few-layer thin films, exfoliated tin disulfide (SnSe2) nanosheets can be used to fabricate devices such as supercapacitors, photodetectors, field-effect transistors, and Esaki tunnel diodes (when combined with phosphorene), based on exfoliated flakes.
Tin diselenide (SnSe2) is manufactured using chemical vapour transport (CVT) crystallisation, with crystals having a purity in excess of 99.999%.
Tin diselenide (SnSe2) single crystals can be used to prepare monolayer and few-layer SnSe2 by mechanical or liquid exfoliation.
Literature and Reviews
- Layer-dependent properties of SnS2 and SnSe2 novel two-dimensional materials, J. Gonzalez et al., Phys. Rev. B 94, 125443 (2016); DOI: 10.1103/PhysRevB.94.125443.
- SnSe2 field-effect transistors with high drive current, Y. Su et al., Appl. Phys. Lett., 103, 263104 (2013); doi: 10.1063/1.4857495.
- Temperature dependence of Raman shifts in layered ReSe2 and SnSe2 semiconductor nanosheets, A. Taube et al., Appl. Phys. Lett., 107, 013105 (2015); doi: 10.1063/1.4926508.
- Few-layer SnSe2 transistors with high on/off ratios, T. Pei, et al., Appl. Phys. Lett., 108, 053506 (2016); doi: 10.1063/1.4941394.
- Synthesis and characterization of SnSe2 hexagonal nanoflakes, K. Liu et al., Mater. Lett., 63, 512–514 (2009); doi:10.1016/j.matlet.2008.10.054.
- Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures, K. Aretouli et al., ACS Appl. Mater. Interfaces, 8, 23222−23229 (2016); DOI: 10.1021/acsami.6b02933.
- Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection, E. Mukhokosi et al., Sci. Rep., 7: 15215 (2017); DOI:10.1038/s41598-017-15519-x.
To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.