Tin Diselenide Crystal

Order Code: M2115A10
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Size Product code Size description* Quantity (EA) Price
Small M2115A10 >10 mm2 1 £396.7
Medium M2115A25 >25 mm2 1 £636.8
Large** M2115A00 >100 mm2 1 £1372.3

*typical representative size, areas/dimensions may vary

** lead time for large crystal is 4-6 weeks

General Information

CAS number 20770-09-6
Chemical formula SnSe2
Molecular weight 276.63 g/mol
Bandgap 1.07 - 1.69 eV [1]
Synonyms Tin (IV) selenide, stannic selenide
Classification / Family Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science

Product Details

Form Single crystal
Preparation Synthetic - chemical vapour transport (CVT)
Purity ≥ 99.999%
Structure 2H Hexagonal
Electronic properties 2D semiconductor
Melting point 650 °C
Appearance Brownish-yellow


General Description

SnSe2 has been reported to have two different crystal structures: the 2H hexagonal phase, and the CdI2-type 1T phase. Currently, there is inconclusive evidence as to which phase is the most stable and frequently observed (2H-SnSe shown below). However, SnSe2 crystallises in the CdI2-type lattice.

Like most of the transitional metal dichalogenides (TMDCs), it is composed of two-dimensional Se-Sn-Se sheets stacked on top of one another, and characterised by strong covalent bonds between Se-Sn-Se atoms and weak interlayer Van der Waals bonds.

tin diselenide - SnSe2
Crystal structure of monolayer 2H-SnSe2.


SnSe2 is an earth-abundant semiconductor with an n-type binary nature. The band gap of SnSecan be tuned from bulk to few-layer thin films with a wide electromagnetic spectrum  range (from 1–2 eV). This makes it an attractive 2D material for various photoelectronic applications.



In the form of single or few-layer thin films, exfoliated tin disulfide (SnSe2) nanosheets can be used to fabricate devices such as supercapacitors, photodetectors, field-effect transistors, and Esaki tunnel diodes (when combined with phosphorene), based on exfoliated flakes.



Tin diselenide (SnSe2) is manufactured using chemical vapour transport (CVT) crystallisation, with crystals having a purity in excess of 99.999%.


Tin diselenide (SnSe2) single crystals can be used to prepare monolayer and few-layer SnSe2 by mechanical or liquid exfoliation.


Literature and Reviews

  1. Layer-dependent properties of SnS2 and SnSe2 novel two-dimensional materials, J. Gonzalez et al., Phys. Rev. B 94, 125443 (2016); DOI: 10.1103/PhysRevB.94.125443.
  2. SnSe2 field-effect transistors with high drive current, Y. Su et al., Appl. Phys. Lett., 103, 263104 (2013); doi: 10.1063/1.4857495.
  3. Temperature dependence of Raman shifts in layered ReSe2 and SnSe2 semiconductor nanosheets, A. Taube et al., Appl. Phys. Lett., 107, 013105 (2015); doi: 10.1063/1.4926508.
  4. Few-layer SnSe2 transistors with high on/off ratios, T. Pei, et al., Appl. Phys. Lett., 108, 053506 (2016); doi: 10.1063/1.4941394.
  5. Synthesis and characterization of SnSe2 hexagonal nanoflakes, K. Liu et al., Mater. Lett., 63, 512–514 (2009); doi:10.1016/j.matlet.2008.10.054.
  6. Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures, K. Aretouli et al., ACS Appl. Mater. Interfaces, 8, 23222−23229 (2016); DOI: 10.1021/acsami.6b02933.
  7. Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection, E. Mukhokosi et al., Sci. Rep., 7: 15215 (2017); DOI:10.1038/s41598-017-15519-x.