Tin(IV) Selenide (SnSe2) Powder and Crystal

Tin(IV) selenide (also known as tin diselenide SnSe₂), CAS number 20770-09-6, is a family member of two-dimensional layered transition metal dichalcogenides (TMDCs) semiconductors. Within each layer, every six selenium atoms are located at the corners of an octahedron, and feature an inversion symmetry (with respect to the central tin atom). The layered structure (bound by the weak Van der Waals forces) allows exfoliation in both solid and liquid forms to peel off layers from bulk crystals or powder.

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Low Cost Tin(IV) Selenide

Powder & Crystal

Different Forms of Tin(IV) Selenide

Outperforming most other 2D layered materials (such as MoS₂ and WSe₂), atomic layered SnSe₂ exhibits high photoresponsivity and a very fast rise and fall response speed. This shows that few-layer SnSe₂ is a promising active 2D material for electronic and optoelectronic applications.

SnSe₂ is an earth-abundant semiconductor with an n-type binary nature. The band gap of SnSe₂ can be tuned from bulk to few-layer thin films with a wide electromagnetic spectrum  range (from 1 - 2 eV). This makes it an attractive 2D material for various photoelectronic applications.

We supply low price tin(iv) selenide in several different forms for a range of applications.

Tin(IV) Selenide Powder

Can be used for preparation of tin(IV) selenide nanoplates and ultrathin films

Sold by weight

≥99.995% purity

From £220

Tin(IV) Selenide Crystals by Size

Can be used to produce single or few-layer tin(IV) selenide sheets via mechanical or liquid exfoliation

Small (≥10 mm²) or medium (≥25 mm²) crystals available*

≥99.999% purity

From £520

*Typical representative size, areas/dimensions may vary

Bulk single tin(IV) selenide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation. 

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Tin(IV) selenide powder can also be used to prepare SnSe₂ nanosheets and nanoparticles by liquid-exfoliation (normally assisted by sonication). 

Key Product Data

• High purity, low price tin(IV) selenide
• Available as a powder or as individual crystal
• Can be used to produce single or few-layer sheets
• Free worldwide shipping on qualifying orders

Structure of Tin(IV) Selenide

SnSe₂ has been reported to have two different crystal structures: the 2H hexagonal phase, and the CdI₂-type 1T phase. Currently, there is inconclusive evidence as to which phase is the most stable and frequently observed (2H-SnSe shown below). However, SnSe₂ crystallises in the CdI₂-type lattice.

Like most of the transitional metal dichalogenides (TMDCs), it is composed of two-dimensional Se-Sn-Se sheets stacked on top of one another. Within each layer, every six selenium atoms are located at the corners of an octahedron, and feature an inversion symmetry (with respect to the central tin atom). The layered structure (bound by the weak Van der Waals forces) allows exfoliation in both solid and liquid forms to peel off layers from bulk crystals or powder.

Properties of 2D Tin(IV) Selenide

After exfoliation of crystals or powder, tin(IV) selenide typically has the following properties:

• Hexagonal (2H) structure (space group: P3m1)
• Family member of two-dimensional layered transition metal dichalcogenides (TMDCs) semiconductors
• n-type semiconducting material
• High photoresponsivity and a very fast rise and fall response speed

Applications of Tin(IV) Selenide

Tin(IV) selenide single crystals can be used to prepare monolayer and few-layer SnSe₂ by mechanical or liquid exfoliation. Tin(IV) selenide powder is suitable for liquid chemical exfoliation to prepare SnSe₂ nanosheets and nanoparticles down to few-layer films. 

With a layered structure, exfoliated thin-films from tin(IV) selenide (SnSe₂) powder offer new opportunities for practical applications as the electrode material for lithium-ion batteries, electric keys, field-effect transistors, photodetectors and supercapacitors.

With a layered structure, exfoliated thin-films from tin(IV) selenide (SnSe₂) powder offer new opportunities for practical applications as the electrode material for lithium-ion batteries, electric keys, field-effect transistors, photodetectors and supercapacitors.

Literature and Reviews

• Layer-dependent properties of SnS₂ and SnSe₂ novel two-dimensional materials, J. Gonzalez et al., Phys. Rev. B 94, 125443 (2016); DOI: 10.1103/PhysRevB.94.125443.
• SnSe2 field-effect transistors with high drive current, Y. Su et al., Appl. Phys. Lett., 103, 263104 (2013); doi: 10.1063/1.4857495.
• Temperature dependence of Raman shifts in layered ReSe2 and SnSe2 semiconductor nanosheets, A. Taube et al., Appl. Phys. Lett., 107, 013105 (2015); doi: 10.1063/1.4926508.
• Few-layer SnSe2 transistors with high on/off ratios, T. Pei, et al., Appl. Phys. Lett., 108, 053506 (2016); doi: 10.1063/1.4941394.
• Synthesis and characterization of SnSe2 hexagonal nanoflakes, K. Liu et al., Mater. Lett., 63, 512–514 (2009); doi:10.1016/j.matlet.2008.10.054.
• Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures, K. Aretouli et al., ACS Appl. Mater. Interfaces, 8, 23222−23229 (2016); DOI: 10.1021/acsami.6b02933.
• Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection, E. Mukhokosi et al., Sci. Rep., 7: 15215 (2017); DOI:10.1038/s41598-017-15519-x.
• SnSe2 quantum dot sensitized solar cells prepared employing molecular, metal chalcogenide as precursors, Chem. Commun., 48, 3324–3326 (2012); DOI: 10.1039/c2cc17081g.
• Ultrathin SnSe2 Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors, X. Zhou et al., Adv. Mater., 27, 8035–8041 (2015); DOI: 10.1002/adma.201503873.
• Designing the shape evolution of SnSe2 nanosheets and their optoelectronic properties, Y. Huang et al., Nanoscale, 7, 17375 (2015); DOI: 10.1039/c5nr05989e.
• Field-effect transistors of high-mobility few-layer SnSe2, C. Guo et al, Appl. Phys. Lett., 109, 203104 (2016); doi: 10.1063/1.4967744.
• Fast Photoresponse from 1T Tin Diselenide Atomic Layers, P. Yu et al., Adv. Funct. Mater., 26, 137–145 (2016); DOI: 10.1002/adfm.201503789.