Zirconium Disulfide (ZrS2) Powder and Crystal
CAS Number 12039-15-5
2D Materials, Low Dimensional Materials, Materials, Transition Metal Chalcogenides (TMCs), Transition Metal Dichalcogenides (TMDs)
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Zirconium disulfide powderLow price, high purity 2D zirconium disulfide powder and crystals
For the development of next-generation electronics, optoelectronics, and nanotechnology
Technical Data | MSDS | Applications | Literature and Reviews | Related Products | Resources and Support
Zirconium disulfide (ZrS2, CAS number 12039-15-5) has a layered structure and it belongs to group IV transition metal dichalcogenides (TMDCs). ZrS2 crystals have the 1T structure, single layer of ZrS2 is formed by a zirconium atom layer sandwiched between two layers of sulfur atoms that are covalently bonded to the zirconium atoms. Each zirconium atom is octahedrally coordinated by six sulfur atoms. Zirconium disulfide (ZrS2) possesses an indirect band gap in the bulk and becomes a direct gap semiconductor in its mono- or few-layer forms.
Like TiS2 and HfS2, ZrS2 adopts a layered structure similar to that of cadmium iodide (1T). Each single ZrS2 layer consists of one layer of Zr atoms, sandwiched in between two layers of sulfide atoms.
ZrS2 is thermodynamically stable, environmentally friendly with high sensitivity, and low-cost production. ZrS2 monolayers exhibited obvious n-type transport characteristics with relatively high mobility.
High Purity
>99.999% Zirconium Disulfide Crystal Purity
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Low Cost Zirconium Disulfide
Powder & Crystal
Different Forms of Zirconium Disulfide
We supply low price zirconium disulfide in several different forms for a range of applications.
Zirconium Disulfide Powder
Can be used for preparation of zirconium disulfide nanoplates and ultrathin films
Available in quantities of 1 g
≥99.995% purity
From £350
Zirconium Disulfide Crystals by Size
Can be used to produce single or few-layer zirconium disulfide sheets via mechanical or liquid exfoliation
Small (≥10 mm2) or medium (≥25 mm2) crystals available*
≥99.999% purity
From £520
*Typical representative size, areas/dimensions may vary.
Bulk single zirconium disulfide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation. Single zirconium disulfide crystal or films produced from such crystals are suitable for study using atomic force microscopy or transmission electron microscopy.
Few-layer ZrSe2 nanosheets and nanoparticles can also obtained from zirconium disulfide powder by liquid-exfoliation.
Technical Data
| CAS number | 12039-15-5 |
| Chemical formula | ZrS2 |
| Molecular weight | 155.35 g/mol |
| Bandgap | ~ 1.7 eV (indirect); ~ 2.0 eV (single or few-layer) |
| Synonyms | Zirconium sulfide, Dithioxozirconium |
| Classification / Family | Transition metal dichalcogenides (TMDCs), 2D Semiconductor materials, Photocatalyst for hydrogen production, Nano-electronics, Nano-photonics, Photovoltaic, Materials science |
Product Details
| Form | Purity |
|---|---|
| Powder | ≥99.995% |
| Crystal | ≥99.999% |
Pricing Table
| Product Code | Form | Size/Weight* | Price |
|---|---|---|---|
| M2202C1 | Powder | 1 g | £350 |
| M2202A10 | Crystal | Small (≥10 mm2) | £520 ea. |
| M2202A25 | Crystal | Medium (≥25 mm2) | £850 ea. |
*Typical representative size, areas/dimensions may vary.
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MSDS Documents
Zirconium disulfide powderApplications of Zirconium Disulfide
ZrS2 is a promising material for optoelectronics because of its greater carrier mobility at room temperature and higher current density than MoS2, which are desirable for low-power devices. With an indirect bandgap around 1.7 eV and direct bandgap around 2.0 eV for the monolayer, ZrS2 finds applications in thermoelectrics, Schottky solar cells, photodetectors, FETs and catalytic hydrogen production.
Zirconium disulfide exhibits interesting single-layer properties such as enhanced thermoelectric property, electrical conductivity and strain-driven indirect-to-direct band gap transition.
ZrS2 2D nanomaterials have a high electron mobility, i.e., 1200 cm2/Vs, which is more than three times larger than that of the widely investigated MoS2 (340 cm2/Vs). FET devices based on ZrS2 have higher electronic sensitivity and excellent semiconducting properties. Calculations showed that ZrS2-based based tunnelling fieldeffect transistors (TFETs) can have sheet current densities of up to 800 μA/μm (100 times higher than that of MoS2), giving the rise of great application potential in low-power devices.
Literature and Reviews
- Ab initio Investigation of Structural Stability and Exfoliation Energies in Transition Metal Dichalcogenides based on Ti-, V-, and Mo-Group Elements, C. Bastos et al., Phys. Rev. Mater., 3, 044002 (2019); DOI: 10.1103/PhysRevMaterials.3.044002.
- The magnetism of 1T-MX2 (M = Zr, Hf; X = S, Se) monolayers by hole doping, H. Xiang et al., RSC Adv., 9, 13561 (2019); DOI: 10.1039/c9ra01218d.
- Optical Nonlinearity of ZrS2 and Applications in Fiber Laser, Lu Li et al., Nanomaterials, 9, 315 (2019); doi: 10.3390/nano9030315.
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