Zirconium Disulfide (ZrS2) Powder and Crystal


Product Code M2201C1
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Low price, high purity 2D zirconium disulfide  powder and crystals

For the development of next-generation electronics, optoelectronics, and nanotechnology


Zirconium disulfide (ZrS2) has a layered structure and it belongs to group IV transition metal dichalcogenides (TMDCs). ZrS2 is thermodynamically stable, environmentally friendly with high sensitivity, and low-cost production. ZrS2 monolayers exhibited obvious n-type transport characteristics with relatively high mobility.

Zirconium disulfide possesses an indirect band gap in the bulk and becomes a direct gap semiconductor in its mono- or few-layer forms. Under symmetrical strain, the band gap of the ZrS2 monolayer can be continuously tuned from zero to 2.47 eV 

We supply low price zirconium disulfide in several different forms for a range of applications.

Zirconium disulfide powder

Zirconium disulfide powder

Can be used for preparation of zirconium disulfide nanoplates nano-platelets and ultrathinthin films

Available in quantities of 1g

≥ 99.995% purity

From £268.00

Zirconium disulfide crystals by size

Zirconium disulfide crystal

Can be used to produce single or few-layer zirconium disulfide sheets via mechanical or liquid exfoliation

Small (≥10mm2) or medium (≥25mm2) crystals available*

≥ 99.999% purity

From £395.00

*Typical representative size, areas/dimensions may vary.

Bulk single zirconium disulfide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation. Single zirconium disulfide crystal or films produced from such crystals are suitable for study using atomic force microscopy or transmission electron microscopy

Platinum FET test chips optimized for 2D materials

Perform electrical and optical measurements without expensive lithography equipment

  • Platinum FET test chips optimized for 2D materials, just £149.00
  • Prepatterned with platinum electrodes on a Si-SiO2 substrate
  • Source-drain channel lengths ranging from 4 µm to 20 µm
  • Transfer your crystal across the channel and start measuring

Few-layer ZrS2 nanosheets and nanoparticles can also obtained from zirconium disulfide powder by liquid-exfoliation.

Key Product Data

  • High purity zirconium disulfide suitable for a range of applications
  • Available in powdered form or in crystal form by weight or size
  • Low price with free worldwide shipping on qualifying orders

Structure and Properties of Zirconium Disulfide

After exfoliation of zirconium disulfide crystal or powder, zirconium disulfide typically has the following properties:

  • ‎Octahedral (1T, space group: P3m1)
  • ZrS2 monolayer undergoes an indirect to direct band gap transition with increasing tensile strain
  • ZrS2 monolayer exhibit strong anisotropy

Applications of Zirconium Disulfide

Zirconium disulfide (ZrS2) single crystals can be used to prepare monolayer and few-layer ZrS2 by mechanical or liquid exfoliation. 

Zirconium disulfide powder is suitable for liquid chemical exfoliation to prepare ZrS2 nanosheets and nanoparticles down to few-layer films.

Zirconium disulfide (ZrS2) exhibits interesting single-layer properties such as enhanced thermoelectric property, electrical conductivity and strain-driven indirect-to-direct band gap transition.

ZrS2 is a promising material for optoelectronics because of its greater carrier mobility at room temperature and higher current density than MoS2, which are desirable for low-power devices. With an indirect bandgap around 1.7 eV and direct bandgap around 2.0 eV for the monolayer, ZrS2 finds applications in thermoelectrics, Schottky solar cells, photodetectors, FETs and catalytic hydrogen production.

ZrS2 2D nanomaterials have a high electron mobility, i.e., 1200 cm2/Vs, which is more tham three times larger than that of the widely investigated MoS2 (340 cm2/Vs). FET devices based on  ZrShave higher electronic sensitivity and excellent semiconducting properties. Calculations showed that ZrS2-based based tunneling fieldeffect transistors (TFETs) can have sheet current densities of up to 800 μA/μm (100 times higher than that of MoS2), giving the rise of great application potential in low-power devices.

Technical Data

CAS number ‎12039-15-5
Chemical formula ZrS2
Molecular weight 155.35 g/mol
Bandgap ~ 1.8 eV (indirect); ~ 2.0 eV (single or few-layer) [1]
Preparation Synthetic - Chemical Vapour Transport (CVT)
Structure ‎Octahedral (1T)
Electronic properties 2D Semiconductor
Melting point 1,480 °C
Colour Red brown
Synonyms Zirconium sulfide, Dithioxozirconium
Classification / Family Transition metal dichalcogenides (TMDCs), 2D Semiconductor materials, Photocatalyst for hydrogen production, Nano-electronics, Nano-photonics, Photovoltaic, Materials science


Product Details

Form Purity

Zirconium Disulfide Powder

≥ 99.995%
Zirconium Disulfide Crystal ≥ 99.999%

MSDS Documents

Zirconium disulfide powder MSDSZirconium disulfide powder

Zirconium disulfide crystal MSDSZirconium disulfide crystal

Structure of Zirconium Disulfide

Like TiSand HfS2, ZrS2 adopts a layered structure similar to that of cadmium iodide (1T). Single layer of ZrS2 is formed by a zirconium atom layer sandwiched between two layers of sulfur atoms that are covalently bonded to the  zirconium atoms. Each zirconium atom is octahedrally coordinated by six sulfur atoms. 

Atoms within a layer are strongly held together by a covalent bond In the crystal structure, and each so called monolayer (a sulfur−zirconium−sulfur trilayer) is separated from the next monolayer by a gap but held by weak van der Waals.

zirconium disulfide - ZrS2 structure

The crystal structure of single-layer zirconium disulfide (ZrS2)

Applications of Zirconium Disulfide

Zirconium disulfide (ZrS2) exhibits interesting single-layer properties such as enhanced thermoelectric property, electrical conductivity and strain-driven indirect-to-direct band gap transition.

ZrS2 is a promising material for optoelectronics because of its greater carrier mobility at room temperature and higher current density than MoS2, which are desirable for low-power devices. With an indirect bandgap around 1.7 eV and direct bandgap around 2.0 eV for the monolayer, ZrS2 finds applications in thermoelectrics, Schottky solar cells, photodetectors, FETs and catalytic hydrogen production.

ZrS2 2D nanomaterials have a high electron mobility, i.e., 1200 cm2/Vs, which is more tham three times larger than that of the widely investigated MoS2 (340 cm2/Vs). FET devices based on  ZrShave higher electronic sensitivity and excellent semiconducting properties. Calculations showed that ZrS2-based based tunneling fieldeffect transistors (TFETs) can have sheet current densities of up to 800 μA/μm (100 times higher than that of MoS2), giving the rise of great application potential in low-power devices.

Pricing Table (All)

Form Size/Weight* Product Code Price
Powder 1 g M2201C1 £268.00
Crystal Small (≥ 10 mm2) M2201A10 £395.00 ea.
Crystal Medium (≥ 25 mm2) M2201A25 £638.00 ea.

*typical representative size, areas/dimensions may vary.

Shipping is free for qualifying orders placed via our secure online checkout.

Literature and Reviews

  1. Single- and few-layer ZrS2 as efficient photocatalysts for hydrogen production under visible light, S. Li et al., ‎Int. J. Hydrog. Energy, 40 (45), 15503-15509 (2015); DOI: 10.1016/j.ijhydene.2015.08.110.
  2. Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first-principles calculations, Y. Li et al., RSC Adv., 4, 7396 (2014); DOI: 10.1039/c3ra46090h.
  3. Low temperature synthesis of ZrS2 nanoflakes and their catalytic activity, RSC Adv., 5, 66082 (2015); DOI: 10.1039/c5ra12412c.
  4. Controlled Synthesis of ZrS2 Monolayer and Few Layers on Hexagonal Boron Nitride, M. Zhang et al., J. Am. Chem. Soc., 137, 7051−7054 (2015); DOI: 10.1021/jacs.5b03807.
  5. Large scale ZrS2 atomically thin layers, X. Wang et al., J. Mater. Chem. C, 4, 3143 (2016); DOI: 10.1039/c6tc00254d.
  6. Ab initio Investigation of Structural Stability and Exfoliation Energies in Transition Metal Dichalcogenides based on Ti-, V-, and Mo-Group Elements, C. Bastos et al., Phys. Rev. Mater., 3, 044002 (2019); DOI: 10.1103/PhysRevMaterials.3.044002.
  7. The magnetism of 1T-MX2 (M = Zr, Hf; X = S, Se) monolayers by hole doping, H. Xiang et al., RSC Adv., 9, 13561 (2019); DOI: 10.1039/c9ra01218d.
  8. Optical Nonlinearity of ZrS2 and Applications in Fiber Laser, Lu Li et al., Nanomaterials, 9, 315 (2019); doi: 10.3390/nano9030315.
  9. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides, Q. Wang et al., Nat. Nanotech., 7, 699–712 (2012), doi: 10.1038/nnano.2012.193.
  10. Strain-induced enhancement in the thermoelectric performance of a ZrS2 monolayer, H. Lv et al., J. Mater. Chem. C, 4, 4538 (2016); DOI: 10.1039/c6tc01135g.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.