Tungsten Diselenide (WSe2) Few-layer Film

CAS Number 12067-46-8

2D Materials, Low Dimensional Materials, Transition Metal Chalcogenides (TMCs), Transition Metal Dichalcogenides (TMDs)

Tungsten Diselenide (WSe2) Few-layer Film MSDS

Tungsten Diselenide (WSe2) Few-layer Film CAS 12067-46-8

High purity tungsten diselenide few-layer film

For applications in transistors, sensors, photovoltaics, and photodetectors devices

Technical Data | MSDS | Literature and Reviews | Related Products

Tungsten diselenide (WSe₂) few-layer film, CAS number 12067-46-8, based field-effect transistors (FETs) can display high hole mobilities ranging from 350 cm²/Vs at room temperature to the saturating value of ~500 cm²/Vs below 50 K. Tri-layered WSe₂ shows a strong photocurrent response of exceptionally high photo responsivities up to 7 A/W under white light illumination and external quantum efficiencies approaching 40% (under laser illumination at λ = 532 nm).

It also has been demonstrated that the carrier type evolves with increasing WSe₂ channel thickness, from p-type (<3 nm) to ambipolar (~4 nm) and n-type (>5 nm). The thickness dependent carrier type is due to the changes in the bandgap of WSe₂ as a function of the thickness and their band offsets relative to the metal contacts. WSe₂ few-layers also exhibit drastic increase in photoluminescent intensity under the application of uniaxial tensile.

High Purity

≥99.999% Crystal Purity

Worldwide shipping

Quick and reliable shipping

Low Cost

Low Cost Tungsten Diselenide

Applications

Applications in Photovoltaics, Photodetectors, FETs and Biomedical

Synthesis

Tungsten diselenide (WSe₂) few-layer film was directly grown on a double side polish sapphire.

Applications

Field-effect transistors (FETs)
Photodetectors
Photovoltaics
Sensors
Biomedical

Technical Data

CAS Number	12067-46-8
Chemical Formula	WSe₂
Molecular Weight	341.76 g/mol
Bandgap	Indirect bandgap
Synonyms	Tungsten selenide, Tungsten(IV) Selenide
Classification / Family	Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science

Product Details

Substrate	Sapphire - Double Side Polished
Product Code	M2224F11
Size	1 cm × 1 cm*
Growth Method	CVD synthesis
Appearance	Transparent
Purity	>99%
Transparency	>97%
Coverage	>95%
Number of Layers	1
Sheet Resistance	N/A
Transfer Method	Directly grown

*Other sizes available: up to 2 cm × 2 cm or 2 inches in diameter.

High-quality tungsten diselenide (WSe₂) few-layer films are available on Sapphire as standard. Different substrates of few-layer WSe₂films, including SiO₂/Si, Glass, Silicon and Quartz are also available via custom order.

Please contact us for more information regarding custom products.

MSDS Document

Tungsten Diselenide Few-Layer Film MSDS Sheet

Literature and Reviews

High Photoresponsivity and Short Photoresponse Times in Few-Layered WSe2 Transistors, N. Pradhan et al., ACS Appl. Mater. Interfaces, 7 (22), 12080–12088 (2015); DOI: 10.1021/acsami.5b02264.
Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors, N. Pradhan et al., Sci. Rep., 5, 8979 (2015); DOI: 10.1038/srep08979.
Accurate identification of layer number for few-layer WS2 and WSe2 via spectroscopic study, Y. Li et al., Nanotechnology, 29, 124001 (2018); DOI 10.1088/1361-6528/aaa923.

WSe2 few layers with enzyme mimic activity for high-sensitive and high-selective visual detection of glucose, T. Chen et al., Nanoscale, 9, 11806-11813 (2017); DOI: 10.1039/C7NR03179C.
Enhanced photocatalytic properties of graphene modified few-layered WSe2 nanosheets, B. Yu et al., Appl. Surf. Sci., 400 (1), 420-425 (2017); DOI: 10.1016/j.apsusc.2016.12.015.
Vertical Few-Layer WSe2 Nanosheets for NO2 Sensing, Y. Duan et al., ACS Appl. Nano Mater., 4 (11), 12043–12050 (2021); DOI: 10.1021/acsanm.1c02603.
Abnormal Multiple Charge Memory States in Exfoliated Few-Layer WSe2 Transistors, M. Chen et al., CS Nano, 11 (1), 1091–1102 (2017); DOI: 10.1021/acsnano.6b08156.
Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors, H. Tang et al., ACS Nano, 11 (12), 12817–12823 (2017); DOI: 10.1021/acsnano.7b07755.
Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2, S. Desai et al., Nano Lett., 14 (8), 4592–4597 (2014); DOI: 10.1021/nl501638a.
Stabilizing High-Voltage Lithium-Ion Battery Cathodes Using Functional Coatings of 2D Tungsten Diselenide, S. Maiti et al., ACS Energy Lett., 7 (4), 1383–1391 (2022); DOI: 10.1021/acsenergylett.2c00514.
A Facile Liquid Phase Exfoliation of Tungsten Diselenide using Dimethyl Sulfoxide as Polar Aprotic Solvent to Produce High-quality Nanosheets, P. Kashyap et al., ChemNanoMat, 7 (3), 328-333 (2021); DOI: 10.1002/cnma.202100020.

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