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Product Code M2224F11-1EA
Price £560 ex. VAT

High purity tungsten diselenide few-layer film

For applications in transistors, sensors, photovoltaics, and photodetectors devices

Technical Data | MSDS | Applications | Literature and Reviews | Related Products | Resources and Support

Tungsten diselenide (WSe2) few-layer film, CAS number 12067-46-8, based field-effect transistors (FETs) can display high hole mobilities ranging from 350 cm2/Vs at room temperature to the saturating value of ~500 cm2/Vs below 50 K. Tri-layered WSe2 shows a strong photocurrent response of exceptionally high photo responsivities up to 7 A/W under white light illumination and external quantum efficiencies approaching 40% (under laser illumination at λ = 532 nm).

It also has been demonstrated that the carrier type evolves with increasing WSe2 channel thickness, from p-type (<3 nm) to ambipolar (~4 nm) and n-type (>5 nm). The thickness dependent carrier type is due to the changes in the bandgap of WSe2 as a function of the thickness and their band offsets relative to the metal contacts. WSe2 few-layers also exhibit drastic increase in photoluminescent intensity under the application of uniaxial tensile.

High Purity 12067-46-8

High Purity

≥99.999% Crystal Purity

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Low Cost 12067-46-8

Low Cost

Low Cost Tungsten Diselenide

Applications of Tungsten Diselenide


Applications in Photovoltaics, Photodetectors, FETs and Biomedical

Technical Data

CAS Number 12067-46-8
Chemical Formula WSe2
Molecular Weight 341.76 g/mol
Bandgap Indirect bandgap
Synonyms Tungsten selenide, Tungsten(IV) Selenide
Classification / Family Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science

Product Details

Substrate Sapphire - Double Side Polished
Product Code M2224F11
Size 1 cm × 1 cm*
Growth Method CVD synthesis
Appearance Transparent
Purity >99%
Transparency >97%
Coverage >95%
Number of Layers 1
Sheet Resistance N/A
Transfer Method Directly grown

*Other sizes available: up to 2 cm × 2 cm or 2 inches in diameter.

High-quality tungsten diselenide (WSe2) few-layer films are available on Sapphire as standard. Different substrates of few-layer WSefilms, including SiO2/SiGlassSilicon and Quartz are also available via custom order. 

Please contact us for more information regarding custom products.

MSDS Document

Tungsten Diselenide Few-layer Film MSDSTungsten Diselenide Few-Layer Film MSDS Sheet


  • Field-effect transistors (FETs)
  • Photodetectors
  • Photovoltaics
  • Sensors
  • Biomedical


Tungsten diselenide (WSe2) few-layer film was directly grown on a double side polish sapphire.

Literature and Reviews

  • High Photoresponsivity and Short Photoresponse Times in Few-Layered WSe2 Transistors, N. Pradhan et al., ACS Appl. Mater. Interfaces, 7 (22), 12080–12088 (2015); DOI: 10.1021/acsami.5b02264.
  • Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors, N. Pradhan et al., Sci. Rep., 5, 8979 (2015); DOI: 10.1038/srep08979.
  • Accurate identification of layer number for few-layer WS2 and WSe2 via spectroscopic study, Y. Li et al., Nanotechnology, 29, 124001 (2018); DOI 10.1088/1361-6528/aaa923.

We stock a wide range of 2D materials available to purchase online. Please contact us if you cannot find what you are looking for.

Resources and Support

Viscoelastic Transfer of 2D Material Using PDMS

Viscoelastic transfer using polydimethylsiloxane (PDMS) stamps is one of the methods used for the deterministic placement of 2D materials and the fabrication of van der Waals heterostructures. It relies on the viscoelasticity of PDMS, which behaves as an elastic solid on short time scales, but as a viscous fluid on long time scales.

Learn more...
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