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Tungsten Diselenide (WSe2) Few-layer Film

CAS Number 12067-46-8

2D Semiconductor Materials, Low Dimensional Materials


Product Code M2224F11-1EA
Price $700 ex. VAT

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High purity tungsten diselenide few-layer film

For applications in transistors, sensors, photovoltaics, and photodetectors devices


Tungsten diselenide (WSe2) few-layer film based field-effect transistors (FETs) can display high hole mobilities ranging from 350 cm2/Vs at room temperature to the saturating value of ~500 cm2/Vs below 50 K. Tri-layered WSe2 shows a strong photocurrent response of exceptionally high photo responsivities up to 7 A/W under white light illumination and external quantum efficiencies approaching 40% (under laser illumination at λ = 532 nm).

It also has been demonstrated that the carrier type evolves with increasing WSe2 channel thickness, from p-type (<3 nm) to ambipolar (~4 nm) and n-type (>5 nm). The thickness dependent carrier type is due to the changes in the bandgap of WSe2 as a function of the thickness and their band offsets relative to the metal contacts. WSe2 few-layers also exhibit drastic increase in photoluminescent intensity under the application of uniaxial tensile.

High Purity 12067-46-8

High Purity

≥99.999% Crystal Purity

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Low Cost 12067-46-8

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Low Cost Tungsten Diselenide

Applications of Tungsten Diselenide

Applications

Applications in Photovoltaics, Photodetectors, FETs and Biomedical

Synthesis

Tungsten diselenide (WSe2) few-layer film was directly grown on a double side polish sapphire.

Applications

  • Field-effect transistors (FETs)
  • Photodetectors
  • Photovoltaics
  • Sensors
  • Biomedical

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Technical Data

CAS Number 12067-46-8
Chemical Formula WSe2
Molecular Weight 341.76 g/mol
Bandgap Indirect bandgap
Synonyms Tungsten selenide, Tungsten(IV) Selenide
Classification / Family Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science

Product Details

Substrate Sapphire - Double Side Polished
Product Code M2224F11
Size 1 cm × 1 cm*
Growth Method CVD synthesis
Appearance Transparent
Purity >99%
Transparency >97%
Coverage >95%
Number of Layers 1
Sheet Resistance N/A
Transfer Method Directly grown

*Other sizes available: up to 2 cm × 2 cm or 2 inches in diameter.

High-quality tungsten diselenide (WSe2) few-layer films are available on Sapphire as standard. Different substrates of few-layer WSefilms, including SiO2/SiGlassSilicon and Quartz are also available via custom order. 

Please contact us for more information regarding custom products.

MSDS Document

Tungsten Diselenide Few-layer Film MSDSTungsten Diselenide Few-Layer Film MSDS Sheet

Literature and Reviews

  • High Photoresponsivity and Short Photoresponse Times in Few-Layered WSe2 Transistors, N. Pradhan et al., ACS Appl. Mater. Interfaces, 7 (22), 12080–12088 (2015); DOI: 10.1021/acsami.5b02264.
  • Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors, N. Pradhan et al., Sci. Rep., 5, 8979 (2015); DOI: 10.1038/srep08979.
  • Accurate identification of layer number for few-layer WS2 and WSe2 via spectroscopic study, Y. Li et al., Nanotechnology, 29, 124001 (2018); DOI 10.1088/1361-6528/aaa923.
  • WSe2 few layers with enzyme mimic activity for high-sensitive and high-selective visual detection of glucose, T. Chen et al., Nanoscale, 9, 11806-11813 (2017); DOI: 10.1039/C7NR03179C.
  • Enhanced photocatalytic properties of graphene modified few-layered WSe2 nanosheets, B. Yu et al., Appl. Surf. Sci., 400 (1), 420-425 (2017); DOI: 10.1016/j.apsusc.2016.12.015.
  • Vertical Few-Layer WSe2 Nanosheets for NO2 Sensing, Y. Duan et al., ACS Appl. Nano Mater., 4 (11), 12043–12050 (2021); DOI: 10.1021/acsanm.1c02603.
  • Abnormal Multiple Charge Memory States in Exfoliated Few-Layer WSe2 Transistors, M. Chen et al., CS Nano, 11 (1), 1091–1102 (2017); DOI: 10.1021/acsnano.6b08156.
  • Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors, H. Tang et al., ACS Nano, 11 (12), 12817–12823 (2017); DOI: 10.1021/acsnano.7b07755.
  • Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2, S. Desai et al., Nano Lett., 14 (8), 4592–4597 (2014); DOI: 10.1021/nl501638a.
  • Stabilizing High-Voltage Lithium-Ion Battery Cathodes Using Functional Coatings of 2D Tungsten Diselenide, S. Maiti et al., ACS Energy Lett., 7 (4), 1383–1391 (2022); DOI: 10.1021/acsenergylett.2c00514.
  • A Facile Liquid Phase Exfoliation of Tungsten Diselenide using Dimethyl Sulfoxide as Polar Aprotic Solvent to Produce High-quality Nanosheets, P. Kashyap et al., ChemNanoMat, 7 (3), 328-333 (2021); DOI: 10.1002/cnma.202100020.

To the best of our knowledge the information provided here is accurate. The values provided are typical at the time of manufacture and may vary over time and from batch to batch. Products may have minor cosmetic differences (e.g. to the branding) compared to the photos on our website. All products are for laboratory and research and development use only.

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