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Product Code M2305C1-500mg
Price £220 ex. VAT

Low price, high purity 2D metal germanium disulfide powder and crystal

For the development of next-generation electronics, optoelectronics, and nanotechnology

Technical Data | MSDS | Structure | Literature and Reviews | Related Products | Resources and Support

Germanium disulfide (GeS2), CAS number 12025-34-2, belongs to the group IV layered transition metal dichalcogenides (TMDCs).  A promising anisotropic semiconductor with unique vdW structure, germanium disulfide is currently of particular research interest into its potential in energy storage applications such as solid state batteries.

Unlike SnS2 or SnSe2 which has a simple 1T structure with the central Sn atoms are octahedrally coordinated by six outer S/Se atoms, GeS2 has more complex structure. GeS2 has a layered structure with tetrahedral coordination with complex structural patterns, containing 48 atoms in the bulk unit cell (space group P21/c). In these structures, each layer is composed of eight distorted, edge- and corner-sharing tetrahedral [GeS4 ] motifs in one unit cell.

High Purity Germanium Disulfide

High Purity

High purity Germanium Disulfide ≥99.995% powder

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Low price 12025-34-2

Low price

Low price Germanium Disulfide

powder and crystals Germanium Disulfide

Different Forms

Available in powder and crystals

Nanoflakes of 2D GeS2 with a thickness of 4.2 nm achieved via mechanical exfoliation is expected to show strong in-plane anisotropy in electrical, optical, and mechanical properties and has been used as polarization-sensitive photo-detectors in the short wave region.

 We supply low price germanium disulfide in several different forms for a range of applications.

Germanium disulfide powder

Germanium Disulfide Powder

Can be used for preparation of germanium disulfide nanoplates and ultrathin films

Sold by weight

≥99.995% purity

From £220

Germanium disulfide crystal

Germanium Disulfide by Size

Can be used to produce single or few-layer germanium disulfide sheets via mechanical or liquid exfoliation

Small (≥10 mm2) or medium (≥25 mm2) crystals available*

≥99.999% purity

From £680

*Typical representative size, areas/dimensions may vary

Bulk single germanium disulfide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation. 

Germanium disulfide powder can also be used to prepare GeS2 nanosheets and nanoparticles by liquid-exfoliation (normally assisted by sonication). 

Technical Data

CAS Number 12025-34-2
Chemical Formula GeS2
Molecular Weight 136.77 g/mol
Bandgap 2.265 eV (monoclinic); 2.599 eV (Tetragonal)
Preparation Synthetic - Chemical Vapour Transport (CVT)
Structure Tetragonal
Electronic Properties 2D semiconductor
Melting Point 825 °C (lit.)
Colour Black
Synonyms Germanium(IV) sulfide
Classification / Family Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science

Product Details

Form Purity
Powder ≥99.995%
Crystal ≥99.999%

Pricing Table

Product Code Form Size/Weight* Price
M2305C1 Powder 500 mg £220
M2305C1 Powder 1 g £350
M2305A10 Crystal Small (≥10 mm2) £680 ea.
M2305A25 Crystal Medium (≥25 mm2) £1200 ea.

*Typical representative size, areas/dimensions may vary

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MSDS Documents

Germanium disulfide powder MSDSGermanium disulfide powder

Germanium disulfide crystal MSDSGermanium disulfide crystal

Structure of Germanium Disulfide

GeS2 crystallizes in the tetragonal P4_2/nmc space group. The structure is two-dimensional and consists of two GeS2 sheets oriented in the (0, 0, 1) direction. Ge4+ is bonded to four equivalent S2- atoms to form corner-sharing GeS4 tetrahedra. All Ge–S bond lengths are 2.27 Å. S2- is bonded in a water-like geometry to two equivalent Ge4+ atoms.

Tetragonal GeS2 is considered a structure of high symmetry: a GeS2 monolayer in which all tetrahedra are connected via corners, resulting in a much more ordered arrangement. This structure corresponds to a single slab of the high-pressure, layer-structured, tetragonal HgI2-type phase.

germanium disulfide crystal structure - GeS2
Top and side view of single-layer germanium disulfide (GeS2)

Literature and Reviews

  • Highly reversible and superior Li-storage characteristics of layered GeS2 and its amorphous composites, G-K. Sung et al., CS Appl. Mater. Interfaces, 8, 43, 29543–29550 (2016); DOI: 10.1021/acsami.6b10994.
  • Sub-Angstrom Characterization of the Structural Origin for High In-Plane Anisotropy in 2D GeS2, X. Wang et al., ACS Nano, 14, 4456−4462 (2020); DOI: 10.1021/acsnano.9b10057.
  • Establishing the structure of GeS2 at high pressures and temperatures: a combined approach using x-ray and neutron diffraction, A. Zeidler et al., J. Phys.: Condens. Matter 21 , 474217 (2009); DOI: 10.1088/0953-8984/21/47/474217.

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Resources and Support

Viscoelastic Transfer of 2D Material Using PDMS

Viscoelastic transfer using polydimethylsiloxane (PDMS) stamps is one of the methods used for the deterministic placement of 2D materials and the fabrication of van der Waals heterostructures. It relies on the viscoelasticity of PDMS, which behaves as an elastic solid on short time scales, but as a viscous fluid on long time scales.

Learn more...
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