Tin Disulfide Crystal
|Size||Product code||Size description*||Quantity (EA)||Price|
*typical representative size, areas/dimensions may vary
**the lead time for large crystals is 4-6 weeks
|Molecular weight||182.83 g/mol|
|Bandgap||2.2 eV |
|Synonyms||Tin (IV) Sulfide, Stannic Sulfide, Tin Sulfide (S2Sn), Mosaic Gold|
|Classification / Family||Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science|
|Preparation||Synthetic - Chemical Vapour Transport (CVT)|
|Electronic properties||2D Semiconductor|
Tin disulfide (SnS2) is a member of the transition metal dichalcogenides (TMDCs) family. It has a layered structure, where each Sn ion coordinates to six S ions in a regular octahedron. Each sheet of Sn atoms is sandwiched between two sheets of S atoms, and each S-Sn-S layer is held by weak van de Vaals interactions. Like many other two dimensional semiconductors, SnS2 can undergo exfoliation to form atomic-layer sheets that have applications in FETs, photovolatic solar cells, sensors and photocatalyst applications.
SnS2 crystallises with a standard hexagonal crystal structure (2H-SnS2) which is identical to that of 1T-MoS2. Monolayers of 2H-SnS2 are stacked precisely on top of one another to form the 2H-polytype of bulk SnS2. It is noted that the 2H-SnS2 structure is different from that of 2H-MoS2, where the Mo atom possesses a trigonal prismatic coordination instead.
In the form of single or few-layer thin films, exfoliated tin disulfide nanosheets find applications ranging from light emitters, field effect transistors (FETs), gas sensors, photodetectors, thermoelectric and photovoltaic devices.
Tin disulfide (SnS2) is manufactured using chemical vapour transport (CVT) crystallisation, with crystals having a purity in excess of 99.999%.
Tin disulfide single crystals can be used to prepare monolayer and few-layer SnS2 by mechanical or liquid exfoliation.
Literature and Reviews
- Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics, Y, Huang et al., ACS Nano, 8 (10), 10743–10755 (2014); DOI: 10.1021/nn504481r.
- Low-Frequency Raman Spectroscopy of Few-Layer 2H-SnS2, T. Sriv et al., Sci. Rep., 8 10194 (2018); DOI:10.1038/s41598-018-28569-6.
- Effect of strain on electronic and magnetic properties of Fe-doped monolayer SnS2, Y. Liu et al., Phy. Lett. A, 381, 1732–1737 (2017); DIO: 10.1016/j.physleta.2017.03.034.
- Electronic and optical properties of single crystal SnS2: an earth-abundant disulfide photocatalyst, L. Burton et al., J. Mater. Chem. A, 4, 1312 (2016); DOI: 10.1039/c5ta08214e.
- Large-Size Growth of Ultrathin SnS2 Nanosheets and High Performance for Phototransistors, X. Zhou et al., Adv. Funct. Mater., 26, 4405–4413 (2016); DOI: 10.1002/adfm.201600318.
To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.