Pricing
Size Product code Size description* Quantity (EA) Price
Small M2114A10
>10 mm2
1
£396.3
Medium M2114A25
>25 mm 2
1
£636.5
Large** M2114A00 >100 mm2 1
£1372.2
*typical representative size, areas/dimensions may vary
**the lead time for large crystals is 4-6 weeks
CAS number
1315-01-1
Chemical formula
Sn S2
Molecular weight
182.83 g/mol
Bandgap
2.2 eV [1]
Synonyms
Tin (IV) Sulfide, Stannic Sulfide, Tin Sulfide (S 2 Sn), Mosaic Gold
Classification / Family
Transition metal dichalcogenides (TMDCs) , 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science
Product Details
Form Single Crystal
Preparation Synthetic - Chemical Vapour Transport (CVT)
Purity ≥ 99.999%
Structure 2H Hexagonal
Electronic properties 2D Semiconductor
Melting point Decomposes
Colour Gold Yellow/orange
General Description
Tin disulfide (Sn S2 ) is a member of the transition metal dichalcogenides (TMDCs) family. It has a layered structure, where each Sn ion coordinates to six S ions in a regular octahedron. Each sheet of Sn atoms is sandwiched between two sheets of S atoms, and each S-Sn-S layer is held by weak van de Vaals interactions. Like many other two dimensional semiconductors, SnS2
The crystal structure of monolayer 2H-SnS2 .
SnS2 crystallises with a standard hexagonal crystal structure (2H-SnS2 ) which is identical to that of 1T-MoS2 . Monolayers of 2H-SnS2 are stacked precisely on top of one another to form the 2H-polytype of bulk SnS2 . It is noted that the 2H-SnS2 structure is different from that of 2H-MoS2 , where the Mo atom possesses a trigonal prismatic coordination instead.
Applications
In the form of single or few-layer thin films, exfoliated tin disulfide nanosheets find applications ranging from light emitters, field effect transistors (FETs), gas sensors, photodetectors, thermoelectric and photovoltaic devices.
Synthesis
Tin disulfide (Sn S2 ) is manufactured using chemical vapour transport (CVT) crystallisation, with crystals having a purity in excess of 99.999%.
Usage
Tin disulfide single crystals can be used to prepare monolayer and few-layer Sn S2 by mechanical or liquid exfoliation.
Literature and Reviews
Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics, Y, Huang et al., ACS Nano, 8 (10), 10743–10755 (2014); DOI: 10.1021/nn504481r.
Low-Frequency Raman Spectroscopy of Few-Layer 2H-SnS2, T. Sriv et al., Sci. Rep., 8 10194 (2018); DOI:10.1038/s41598-018-28569-6.Effect of strain on electronic and magnetic properties of Fe-doped monolayer SnS2 , Y. Liu et al., Phy. Lett. A, 381, 1732–1737 (2017); DIO: 10.1016/j.physleta.2017.03.034.Electronic and optical properties of single crystal SnS2: an earth-abundant disulfide photocatalyst, L. Burton et al., J. Mater. Chem. A, 4, 1312 (2016); DOI: 10.1039/c5ta08214e.Large-Size Growth of Ultrathin SnS2 Nanosheets and High Performance for Phototransistors, X. Zhou et al., Adv. Funct. Mater., 26, 4405–4413 (2016); DOI: 10.1002/adfm.201600318.
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