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Product Code M2114C1-500mg
Price $275 ex. VAT

Low price, high purity 2D metal tin(IV) sulfide powder and crystals

For the development of next-generation electronics, optoelectronics, and nanotechnology


Technical Data | MSDS | Structure | Literature and Reviews | Related Products | Resources and Support


Tin(IV) sulfide (also known as tin disulfide SnS2), CAS number 1315-01-1, is a layered metal dichalcogenide semiconductor with a similar chemical and crystal structure to that of molybdenum disulfide (MoS2). In each individual layer, Sn is sandwiched between two S layers with strong covalent bonding, whereas individual mono-layers are held by weak van der Waals forces. Individual layers break free when weak van der Waals forces are overcome by either physical or chemical exfoliation.

Like many other two dimensional semiconductors, SnS2 can undergo exfoliation to form atomic-layer sheets that have applications in FETs, photovolatic solar cells, sensors and photocatalyst applications. 

SnSis an n-type semiconducting material that has a hexagonal CdI2-type structure. 

High Purity 1315-01-1

High Purity

≥99.999% Crystal Purity

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Low Cost 1315-01-1

Low Cost

Low Cost Tin(IV) Sulfide

Different Forms of Tin(IV) Sulfide

Powder & Crystal

Different Forms of Tin(IV) Sulfide

We supply low price tin(IV) sulfide in several different forms for a range of applications.

Tin(IV) sulfide powder

Tin(IV) Sulfide Powder

Can be used for preparation of tin(IV) sulfide nanoplates and ultrathin films

Sold by weight

≥99.995% purity

From £220

Tin(IV) sulfide crystals by size

Tin(IV) Sulfide Crystals by Size

Can be used to produce single or few-layer tin(IV) sulfide sheets via mechanical or liquid exfoliation

Small (≥10 mm2) or medium (≥25 mm2) crystals available*

≥99.999% purity

From £520

*Typical representative size, areas/dimensions may vary

Bulk single tin(IV) sulfide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation. 

Tin(IV) sulfide powder can also be used to prepare SnS2 nanosheets and nanoparticles by liquid-exfoliation (normally assisted by sonication). Cu intercalated bilayer SnS2 displays a hole field-effect mobility of ~40 cm2 V−1 s−1, and Co-SnS2 exhibits a metal-like behaviour with sheet resistance comparable to that of few-layer graphene.

Technical Data

CAS Number 1315-01-1
Chemical Formula SnS2
Molecular Weight 182.83 g/mol
Bandgap 2.2 eV
Preparation Synthetic - Chemical Vapour Transport (CVT)
Structure Hexagonal (2H)
Electronic Properties 2D CDW materials
Melting Point N/A
Colour Dark brown
Synonyms Tin disulfide, Stannic sulfide, Tin sulfide (S2Sn), Mosaic gold
Classification / Family Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, NIR band-gap, Nano-electronics, Nano-photonics, Transistors, Photovoltaics, Materials science

Product Details

Form Purity
Powder ≥99.995%
Crystal ≥99.999%

Pricing Table

Product Code Form Size/Weight* Price
M2114C1 Powder 500 mg £220
M2114C1 Powder 1 g £350
M2114A10 Crystal Small (≥10 mm2) £520 ea.
M2114A25 Crystal Medium (≥25 mm2) £850 ea.
M2114A00 Crystal Large (≥100 mm2) £1800 ea.

*Typical representative size, areas/dimensions may vary

Shipping is free for qualifying orders.

MSDS Documents


Tin disufide powder MSDSTin(IV) sulfide powder

Tin disufide crystal MSDSTin(IV) sulfide crystal

Structure of Tin(IV) Sulfide


Tin(IV) sulfide (SnS2) has a layered structure, where each Sn ion coordinates to six S ions in a regular octahedron. Each sheet of Sn atoms is sandwiched between two sheets of S atoms, and each S-Sn-S layer is held by weak van de Vaals interactions. 

SnS2 crystallises with a standard hexagonal crystal structure (2H-SnS2) which is identical to that of 1T-MoS2. Monolayers of 2H-SnS2 are stacked precisely on top of one another to form the 2H-polytype of bulk SnS2. It is noted that the 2H-SnS2 structure is different from that of 2H-MoS2, where the Mo atom possesses a trigonal prismatic coordination instead.

SnS2 crystal structure
Top and side view of single-layer tin(IV) sulfide (2H-SnS2)

Literature and Reviews


  • Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics, Y, Huang et al., ACS Nano, 8 (10), 10743–10755 (2014); DOI: 10.1021/nn504481r.
  • Low-Frequency Raman Spectroscopy of Few-Layer 2H-SnS2, T. Sriv et al., Sci. Rep., 8 10194 (2018); DOI:10.1038/s41598-018-28569-6.
  • Effect of strain on electronic and magnetic properties of Fe-doped monolayer SnS2, Y. Liu et al., Phy. Lett. A, 381, 1732–1737 (2017); DIO: 10.1016/j.physleta.2017.03.034.

We stock a wide range of 2D materials available to purchase online. Please contact us if you cannot find what you are looking for.

Resources and Support


Viscoelastic Transfer of 2D Material Using PDMS

Viscoelastic transfer using polydimethylsiloxane (PDMS) stamps is one of the methods used for the deterministic placement of 2D materials and the fabrication of van der Waals heterostructures. It relies on the viscoelasticity of PDMS, which behaves as an elastic solid on short time scales, but as a viscous fluid on long time scales.

Learn more...
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