F8BT

Order Code: M231
MSDS sheet

Price

(excluding Taxes)

£146.00


General Information

Full name Poly(9,9-dioctylfluorene-alt-benzothiadiazole)
Synonyms
  • F8BT
  • PFBT
Chemical formula (C35H42N2S)n
CAS number 210347-52-7
HOMO / LUMO HOMO = -5.9 eV, LUMO = -3.3 eV
Classification / Family Polyfluorenes, Benzothiodiazoles, Organic semiconducting materials, Semiconducting polymers, OLED green emitter materials, OLED materials, Organic Photovoltaic materials, Polymer solar cells, OFET materials

Product Details

Purity > 99.9%
Mw > 240,000 g/mol
Appearance Orange powder

Batch History

Batch No. Mw (g/mol) Mn (g/mol) PDI Stock
20160113 376,200 221,300 1.70 In stock
20151111 376,200 221,300 1.70 Sold out
20150430 253,600 120,200 2.11 Sold out
20150423 240,600 123,400 1.95 Sold out
F8BT chemical structure
Chemical structure of F8BT. CAS No.: 210347-52-7. Chemical formula: (C35H42N2S)n.

 

Applications

A widely used green emitting reference polymer for a variety of applications including as an emissive species in OLEDs [1], an approximately balanced p-type and n-type polymer for OFETs [2] and light emitting transistors [3] as well as being used a polymeric accepter for OPVs [1]. The deep lying HOMO and LUMO levels (5.9 / 3.3 eV) make it air stable while the liquid-crystalline and beta phases make it widely used for basic research purposes.

 

Device structure ITO/PEDOT:PSS/TFB/F8BT/F8imBT-Br*/Ca/Al [4]
Colour Green green
Max. EQE 5.1%
Max. Current Efficiency 17.9 cd/A
Max. Power Efficiency 16.6 lm W1

 

Usage Datasheet

For a high efficiency green OLED we recommend blending F8 with F8BT with the below specifications. This ink can then be applied either in air or in a glovebox with little difference in performance provided exposure time and light levels are minimised. For more details see our fabrication guide.

At typical concentrations of 10 mg/ml 100 mg of F8 (PFO) will make around 200 devices on Ossila's standard ITO substrates (20 x 15 mm) assuming 50% solution usage (50% loss in filtering and preparation).

OLED reference device:

  • F8 with F8BT
  • Blend ratio of 19:1 (F8:F8BT) in Toluene
  • Total concentration of 10 mg/ml
  • 0.45 μm PTFE filter
  • Spun at 2000 rpm (approx. 70 nm thickness)

Pipetting 20 μl of the above solutions onto a substrate spinning at 2000 rpm should provide a good even coverage with approximately 70 nm thickness. The substrate needs to be spun until dry, which is typically only a few seconds — 15 seconds should be ample to achieve this. Thermal annealing should be undertaken at 80°C for 10 minutes prior to cathode deposition

A basic but efficient OLED can be made using PEDOT:PSS as a hole transport layer and Calcium/Aluminium as the electron contact. When used with the Ossila ITO substrates and shadow masks this produces an easy to fabricate yet efficient >100 cd/m2) device.

Polyfluorene-based OLED architecture based on F8 blended with F8BT
Typical Ossila device architecture: Polyfluorene-based OLED architecture based on F8 blended with F8BT.

 

Literature and References

Please note that Ossila has no formal connection to any other authors or institutions in these references.

  1. Conjugated-Polymer Blends for Optoelectronics. C.R. McNeill et al., Advanced Materials, Vol 21, Issue 38-39, 3840 (2009)
  2. Electron and hole transport in poly(fluorene-benzothiadiazole). Y. Zhang et al., Appl. phys. Lett., Vol 98, 143504 (2011)
  3. Organic Light Emitting Field Effect Transistors: Advances and Perspectives. F. Cicoira et al., Advanced Functional Materials, Vol 17, Issue 17, 3421-3434 (2007)
  4. High-Efficiency Polymer LEDs with Fast Response Times Fabricated via Selection of Electron-Injecting Conjugated Polyelectrolyte Backbone Structure, M. Suh et al., ACS Appl. Mater. Interfaces, (2015), DOI: 10.1021/acsami.5b07862.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.

 



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