FREE shipping to on qualifying orders when you spend or more, processed by Ossila BV. All prices ex. VAT. Qualifying orders ship free worldwide! Fast, secure, and backed by the Ossila guarantee. It looks like you are visiting from , click to shop in or change country. Orders to the EU are processed by our EU subsidiary.

It looks like you are using an unsupported browser. You can still place orders by emailing us on info@ossila.com, but you may experience issues browsing our website. Please consider upgrading to a modern browser for better security and an improved browsing experience.

Tin(II) Selenide (SnSe) Crystal

CAS Number 1315-06-6

2D Semiconductor Materials, Low Dimensional Materials


Product Code M2116A10
Price $650 ex. VAT

Quality assured

Expert support

Volume discounts

Worldwide shipping

Fast and secure


Tin(II) selenide crystal, high purity narrow band gap semiconductor

Comprised of environmentally friendly elements


Tin(II) selenide (SnSe) is a narrow band gap semiconductor comprised of environmentally friendly and earth abundant elements.

SnSe has recently proven to be an extraordinarily promising thermoelectric material with intrinsically ultra-low lattice thermal conductivity and a record figure of merit up to 2.6 at a higher temperature (813 K). This enables direct and reversible conversion between thermal and electrical energy, and provides a viable route for power generation from waste heat.

With an indirect bandgap of 1.30 eV and direct bandgap of 1.21 eV,  SnSe has great potential to be utilised as an efficient material for solar energy conversion.

SnSe belongs to the class of layered semiconductors. It is made up of tightly bound layers formed by double planes each of which consists of zigzag chains of tin and selenium atoms. At room temperature, SnSe adopts orthorhombic crystal structure which can be compared to that of black phosphorus.

High Purity 1315-06-6

High Purity

≥99.999% Crystal Purity

Worldwide shipping for 1315-06-6

Worldwide shipping

Quick and reliable shipping

narrow band gap semiconductor

Semiconductor

Narrow band gap semiconductor

environmentally friendly

Environmentally friendly

Comprised of environmentally friendly elements

Structure of Tin(II) Selenide Crystal

Tin selenide chemical strucutre
The puckered structure of tin(II) selenide (SnSe)

Platinum FET Test Chips for 2D Materials

Test chips optimized for 2D materials
  • Affordable
  • World-Wide Shipping
  • Dual Channel Electrodes

Buy Online £200

Applications of Tin(II) Selenide Crystal

Exfoliated few-layer tin(II) selenide (SnSe) has been used in the field of photovoltaics and infrared optoelectronic devices, radiation detectors, holographic recording systems, electrical switching, and polarity-dependent memory switching devices. SnSe also has great potential for use in memory switching devices, efficient solar materials, and holographic recording systems.

Synthesis

Tin(II) selenide (SnS) is manufactured using chemical vapour transport (CVT) crystallisation, with crystals having a high purity (in excess of 99.999%).

Usage

Tin(II) selenide single crystals can be used to prepare monolayer and few-layer Sn, via mechanical or liquid exfoliation.

Viscoelastic transfer of 2D material using PDMS

Literature and Reviews

  • Liquid Exfoliation Few-Layer SnSe Nanosheets with Tunable Band Gap, Y. Huang et al., J. Phys. Chem. C, 121 (32), 17530–17537 (2017); DOI: 10.1021/acs.jpcc.7b06096.
  • Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals, L. Zhao et al., Nature, 508, 373-377 (2014); doi: 10.1038/nature13184.
  • Quasiparticle band structures and thermoelectric transport properties of p-type SnSe, G. Shi et al., J. Appl. Phys., 117, 065103 (2015); doi: 10.1063/1.4907805.
  • Anisotropic Spin Transport and Strong Visible-Light Absorbance in Few- Layer SnSe and GeSe, G. Shi et al., Nano Lett., 15, 6926−6931 (2015); DOI: 10.1021/acs.nanolett.5b02861.
  • Nanostructured SnSe: Synthesis, doping, and thermoelectric properties, S. Liu et al., J. Appl. Phys., 123, 115109 (2018); doi: 10.1063/1.5018860.

Technical Data

CAS Number 1315-06-6
Chemical Formula SnSe
Molecular Weight 197.67 g/mol
Bandgap 0.91 - 1.79 eV [1]
Preparation Synthetic - Chemical Vapour Transport (CVT)
Structure Orthorhombic
Electronic Properties 2D semiconductor
Melting Point 861 °C (lit.)
Colour Metallic
Synonyms Stannous selenide, Tin selenide
Classification / Family Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science

Product Details

Form Purity
Crystal ≥99.999%

MSDS Documents

Tin(II) selenide crystal MSDSTin(II) selenide crystal

Pricing Table

Product code Form Size* Quantity (EA) Price
M2116A10 Crystal Small (≥10 mm2) 1 £520
M2116A25 Crystal Medium (≥25 mm2) 1 £850

*typical representative size, areas/dimensions may vary

Shipping is free for qualifying orders.


To the best of our knowledge the information provided here is accurate. The values provided are typical at the time of manufacture and may vary over time and from batch to batch. Products may have minor cosmetic differences (e.g. to the branding) compared to the photos on our website. All products are for laboratory and research and development use only.

Return to the top