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Product Code M2116A10
Price £520 ex. VAT

Tin(II) selenide crystal, high purity narrow band gap semiconductor

Comprised of environmentally friendly elements

Technical Data | MSDS | Structure | Literature and Reviews | Related Products | Resources and Support

Tin(II) selenide (SnSe), CAS number 1315-06-6, is a narrow band gap semiconductor comprised of environmentally friendly and earth abundant elements.

SnSe has recently proven to be an extraordinarily promising thermoelectric material with intrinsically ultra-low lattice thermal conductivity and a record figure of merit up to 2.6 at a higher temperature (813 K). This enables direct and reversible conversion between thermal and electrical energy, and provides a viable route for power generation from waste heat.

With an indirect bandgap of 1.30 eV and direct bandgap of 1.21 eV,  SnSe has great potential to be utilised as an efficient material for solar energy conversion.

SnSe belongs to the class of layered semiconductors. It is made up of tightly bound layers formed by double planes each of which consists of zigzag chains of tin and selenium atoms. At room temperature, SnSe adopts orthorhombic crystal structure which can be compared to that of black phosphorus.

High Purity 1315-06-6

High Purity

≥99.999% Crystal Purity

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narrow band gap semiconductor


Narrow band gap semiconductor

environmentally friendly

Environmentally friendly

Comprised of environmentally friendly elements

Technical Data

CAS Number 1315-06-6
Chemical Formula SnSe
Molecular Weight 197.67 g/mol
Bandgap 0.91 - 1.79 eV [1]
Preparation Synthetic - Chemical Vapour Transport (CVT)
Structure Orthorhombic
Electronic Properties 2D semiconductor
Melting Point 861 °C (lit.)
Colour Metallic
Synonyms Stannous selenide, Tin selenide
Classification / Family Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science

Product Details

Form Purity
Crystal ≥99.999%

Pricing Table

Product Code Form Size* Quantity (EA) Price
M2116A10 Crystal Small (≥10 mm2) 1 £520
M2116A25 Crystal Medium (≥25 mm2) 1 £850

*Typical representative size, areas/dimensions may vary

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MSDS Documents

Tin(II) selenide crystal MSDSTin(II) selenide crystal

Structure of Tin(II) Selenide Crystal

Tin selenide chemical strucutre
The puckered structure of tin(II) selenide (SnSe)

Literature and Reviews

  • Liquid Exfoliation Few-Layer SnSe Nanosheets with Tunable Band Gap, Y. Huang et al., J. Phys. Chem. C, 121 (32), 17530–17537 (2017); DOI: 10.1021/acs.jpcc.7b06096.
  • Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals, L. Zhao et al., Nature, 508, 373-377 (2014); doi: 10.1038/nature13184.
  • Quasiparticle band structures and thermoelectric transport properties of p-type SnSe, G. Shi et al., J. Appl. Phys., 117, 065103 (2015); doi: 10.1063/1.4907805.

We stock a wide range of 2D materials available to purchase online. Please contact us if you cannot find what you are looking for.

Resources and Support

Viscoelastic Transfer of 2D Material Using PDMS

Viscoelastic transfer using polydimethylsiloxane (PDMS) stamps is one of the methods used for the deterministic placement of 2D materials and the fabrication of van der Waals heterostructures. It relies on the viscoelasticity of PDMS, which behaves as an elastic solid on short time scales, but as a viscous fluid on long time scales.

Learn more...
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