SiTrzCz2
CAS Number 2422045-58-5
Electron Transport Layer Materials, High Purity Sublimed Materials, Host Materials, Materials, OLED Materials, Semiconducting Molecules,SiTrzCz2, electron transport and exciplex host
Used in conjunction with hole transport to form exciplex host for highly efficient blue phosphorescent organic light-emitting diodes, 9,9′-(6-(3-(triphenylsilyl)phenyl)-1,3,5-triazine-2,4-diyl)bis(9H-carbazole), CAS No. 2422045-58-5, Sublimed ≥99.0%
SiTrzCz2, 9,9′-(6-(3-(triphenylsilyl)phenyl)-1,3,5-triazine-2,4-diyl)bis(9H-carbazole), has a molecular structure of two electron rich carbzolyl and one tetraphenylsilane units that are bridged by a electron deficient 1,3,5-trazine. SiTrzCz2 is electron deficient so it is normally used as electron transport layer, or as a blue bipolar phosphorescent host, or as one of the electron accepting components in a binary exciplex host.
Exciplex host SiCzCz:SiTrZCz2 has a triplet energy level that is lower than those of single host materials but still high enough to allow the exciplex to be used as a co-host in blue phosphorescent organic light-emitting diodes (PhOLEDs). Also device using mCBP:SiTrZCz2 (mSi-2CzTrz) as exciplex host demonstrated an external quantum efficiency of 22.8% and a operational lifetime with up to 80% of the initial luminance of over 2000 h at 100 cd m−2 in blue PhOLEDs [1].
General Information
CAS number | 2422045-58-5 |
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Chemical formula | C51H35N5Si |
Molecular weight | 745.94 g/mol |
Photoluminescence | λem 440 nm (in film) |
HOMO/LUMO | HOMO = 5.99 eV, LUMO = 2.75 eV; ET = 2.89 eV [1] |
Chemical name | 9,9′-(6-(3-(triphenylsilyl)phenyl)-1,3,5-triazine-2,4-diyl)bis(9H-carbazole) |
Synonyms | mSi-2CzTrz |
Classification / Family | Arylsilane derivatives, Phosphorescent host materials, Hole transport layer (HTL), Electron blocking layer (EBL), Sublimed materials, Semiconducting small molecules |
Product Details
Purity | Sublimed* >99.0% (HPLC) |
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Melting point | Tg = 125 °C, TGA = 487 °C (lit.) |
Appearance | White powder/crystals |
* Sublimation is a technique used to obtain ultra pure-grade chemicals, see sublimed materials.
Chemical Structure
Device Structure(s)
Device structure | ITO (50 nm)/BCFN:HATCN (40 nm, 30 wt%)/BCFN (10 nm)/mCBP (10 nm)/ mCBP:mSi-2CzTrz:CNImIr (30 nm, 42.5:42.5:15 wt%)/DBFTrz (5 nm)/ZADN (20 nm)/LiF (1.5 nm)/Al (200 nm) [1] |
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Colour |
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Max. EQE | 15.4% |
Max. Power Efficiency | 19.5 Im/W |
Max. Current Efficiency | 32.4 cd/A |
Device structure | ITO/HAT-CN (10 nm)/BCFN (60 nm)/SiCzCz (5 nm)/SiCzCz:SiTrzCz2:BD-01 (35 nm, 0.60:0.27:0.13 w/w/w)/mSiTrz (5 nm)/mSiTrz:Liq (31 nm, 5:5)/LiF (1.5 nm)/Al (80 nm) [2] |
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Colour |
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Max. EQE | 17.6% |
Max. Power Efficiency | 40.7 Im/W |
Max. Current Efficiency | 36.3 cd/A |
Device structure | ITO/HAT-CN (10 nm)/BCFN (60 nm)/SiCzCz (5 nm)/SiCzCz:SiTrzCz2:BD-02 (35 nm, 0.60:0.27:0.13 w/w/w)/mSiTrz (5 nm)/mSiTrz:Liq (31 nm, 5:5)/LiF (1.5 nm)/Al (80 nm) [2] |
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Colour |
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Max. EQE | 25.4% |
Max. Power Efficiency | 35.7 Im/W |
Max. Current Efficiency | 31.8 cd/A |
Device structure | ITO/HAT-CN (10 nm)/BCFN (60 nm)/SiCzCz (5 nm)/SiCzCz:SiTrzCz2:PtON-TBBI:t-DABNA (EML 30 nm)/2SiTrzPh (5 nm)/2SiTrzPh:Liq (5:5, 31 nm)/LiF (1.5 nm)/Al (80 nm)[3] |
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Colour |
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Max. EQE | 23.7% |
Max. Current Efficiency | 26.2 cd/A |
LT95 (hours) | 19.8 |
Device structure | ITO/HAT-CN (10 nm)/BCFN (60 nm)/SiCzCz (5 nm)/SiCzCz:SiTrzCz2:PtON-TBBI:TBE02 (EML 30 nm)/2SiTrzPh (5 nm)/2SiTrzPh:Liq (5:5, 31 nm)/LiF (1.5 nm)/Al (80 nm)[3] |
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Colour |
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Max. EQE | 25.4% |
Max. Current Efficiency | 36 cd/A |
LT95 (hours) | 72.9 |
Pricing
Grade | Order Code | Quantity | Price |
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Sublimed (>99.0% purity) | M2377A1 | 100 mg | £170 |
Sublimed (>99.0% purity) | M2377A1 | 250 mg | £340 |
Sublimed (>99.0% purity) | M2377A1 | 500 mg | £540 |
Sublimed (>99.0% purity) | M2377A1 | 1 g | £900 |
MSDS Documentation
Literature and Reviews
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Rational design of blocking groups for high triplet energy n-type host materials, J. Ha et al., J. Mater. Chem. C, 10, 5962-5969 (2022); DOI: 10.1039/D1TC06083J.
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Superbly long lifetime over 13,000 h for multiple energy transfer channels in deep blue phosphorescence organic light-emitting diodes with Ir complex under CIEy of 0.17, K. Kim et al., Chem. Eng. J. 448, 137671 (2022); DOI: 10.1016/j.cej.2022.137671.
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Exceptionally stable blue phosphorescent organic light-emitting diodes, J. Sun et al., Nat. Photon. 16, 212–218 (2022); DOI: 10.1038/s41566-022-00958-4.