Silver Indium Phosphorus Selenide (AgInP2Se6) Powder
Layered silver indium phosphorus selenide (AgInP2Se6) is another family member of hexachalcogenohypodiphosphates family which has a chemical formula of ABP2X6 (A = Cu or Ag, B = In or Bi, and X = S or Se).
Bulk AgInP2Se6 crystallizes in the trigonal P-31c space group and its monolayer adopts the centrosymmetric structure, with six equivalent bonds and no shift of metal atoms.
Atomically thin AgInP2Se6 layers can be synthesized through a facile probe sonication exfoliation of either bulk crystals or powder.
|Full name||Silver indium phosphorus selenide|
|Molecular weight||758.39 g/mol|
|Bandgap||Eg = 0.622 eV eV|
|Classification / Family||Hexachalcogenohypodiphosphates, 2D semiconductor Materials, Nano-electronics, Nano-photonics, Transistors, Photovoltaics, Materials science|
|Acquire method||Synthetic - Chemical Vapour Transport (CVT)|
|Electronic properties||2D semiconductor, Topological insulator|
|Colour||Silver to dark grey powder|
The crystal structure of AgInP2Se6 is very similar to the that of AgInP2S6 and it crystallizes in the trigonal P-31c space group. The structure is two-dimensional and consists of two AgIn(PSe3)2 sheets oriented in the (0, 0, 1) direction. Both metal Ag and In atoms are coordinated with six Se atoms and P atoms are tetrahedral coordinated to form a binuclear [P2Se6] 4- cluster which are located in the centre of hexagon composed by alternative three Ag atoms and three In atoms.
In the bulk and multilayer samples, the neighbouring layers are coupled by van der Waals interactions. The selenium atoms form a hexagonal close packed structure arrangement with the layer sequence ABAB running along c-axis. .
Monolayer AgInP2Se6 is extremely stable semiconductor and its bandgap and light absorption is adjustable by applying strains. Uniaxial and biaxial strains of 0.90–1.10 can realize the transition between indirect band gap and direct band gap and the phenomenon of optical red shift. Applying tensile strain will cause the dielectric function spectrum to respond in a lower energy direction. the tunability of the such optical and electrical properties makes AgInP2Se6 a great candidate for application in photoelectronic devices.
AgInP2Se6 also shows a good photochemical hydrogen evolution reaction (HER) activity.
Obtained via the CVT method, AgInP2Se6 powder with purities of over 99.995% have been achieved.
AgInP2Se6 powder is suitable for liquid chemical exfoliation to process AgInP2Se6 quantum dot solutions and nano-plates down to few-layer films. High-quality, high-purity AgInP2S6 powder is also used for CV deposition of ultra-thin single or few-layer films.
Literature and Reviews
- Tuning the electronic and optical properties of two-dimensional AgBiP2Se6 and AgInP2Se6 Janus monolayers, C. Zhang et al., Chem. Phys. Lett., 780, 138933 (2021); DOI: 10.1016/j.cplett.2021.138933.
- Dielectric Properties of New AgInP2Se6 Crystals, A. Dziaugys et al., Ferroelectrics, 391, 151-157 (2010); DOI: 10.1080/00150190903004718.
- Ferroelectricity in 2D metal phosphorous trichalcogenides and van der Waals heterostructures for photocatalytic water splitting, J. Mater. Chem. A, 9, 2734-2741 (2021); S. Huang et al., DOI: 10.1039/D0TA09618K.
- Multidirectional Intrinsic Piezoelectricity of 2D Metal Chalcogen–Diphosphate ABP2X6 Monolayers, S. Jiang et al., Phys. Status Solidi RRL, 14, 2000321 (2020); DOI: 10.1002/pssr.202000321..
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