*typical representative size, areas/dimensions may vary
~ 1.35 eV (direct)
||Rhenium sulphide, Bis(sulfanylidene)rhenium
|Classification / Family
Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science
||Synthetic - Chemical Vapour Transport (CVT)
Rhenium disulfide (ReS2) is a 2D layered semiconductor. ReS2 unit cell is derived from hexagonal symmetry towards triclinic - a distorted 1T structure. An ReS2 single layer is comprised of three atomic layers, 'S–Re–S', where Re and S are joined by covalent bonds and each rhenium is coordinated to six sulfur atoms in approximately octahedral geometry. Each sulfur atom is bonded to three Re atoms. Each Re atom also groups into parallelograms of four Re atoms, hence offering opportunities to introduce built-in planar anisotropy into composite heterostructures.
Like other 2D layered materials, the adjacent layers in ReS2 are also coupled by weak van der Waals (vdW) forces to form bulk crystals. Unlike most 2D layered materials, ReS2 behaves as a stack of electronically- and vibrationally decoupled monolayers, even in the bulk form. Raman spectrum and photoluminescence properties are independent of the number of layers. This suggests that ReS2 could offer a novel system to study mesoscopic physics of 2D systems without the limitation of obtaining large-area, monolayer-thick flakes.
Rhenium disulfide has peculiar physical properties: it exhibits distinct in-plane anisotropy and has a direct tunable optical band gap between 1.4 and 1.6 eV for both bulk and monolayer structures. Thus, ReS2 layered nanostructures are good candidates for optoelectronic devices, photosensitive detectors, sensors, stretchable electrodes, and electrocatalysts applications. ReS2 can also be employed to fabricate solar cell devices.
Rhenium disulfide (ReS2) is manufactured using chemical vapour transport (CVT) crystallisation, with crystals having a purity in excess of 99.999%.
Rhenium disulfide single crystals can be used to prepare monolayer and few-layer ReS2 by mechanical or liquid exfoliation.
Literature and Reviews
Synthesis and Characterization of ReS2 and ReSe2 Layered Chalcogenide Single Crystals, B. Jariwala et al., Chem. Mater., 28, 3352−3359 (2016); DOI: 10.1021/acs.chemmater.6b00364.
Rhenium Dichalcogenides: Layered Semiconductors with Two Vertical Orientations, L. Hart et al., Nano Lett., 16, 1381−1386 (2016); DOI: 10.1021/acs.nanolett.5b04838.
Growth of two-dimensional rhenium disulfide (ReS2) nanosheets with a few layers at low temperature, S. Kim et al., CrystEngComm, 19, 5341 (2017); DOI: 10.1039/c7ce00926g.
Selecting electrode materials for monolayer ReS2 with an Ohmic contact, J. Mater. Chem. C, 6, 6764 (2018); DOI: 10.1039/c8tc02116c.
Structure of Rhenium Disulfide, H. Murray et al., Inorg. Chem., 33, 4418—4420 (1994); DOI: 10.1021/ic00097a037.
Advent of 2D Rhenium Disulfide (ReS2): Fundamentals to Applications, M. Rahman et al., Adv. Funct. Mater., 27, 1606129 (2017); DOI: 10.1002/adfm.201606129.
Bottom-Up Preparation of Uniform Ultrathin Rhenium Disulfide Nanosheets for Image-Guided Photothermal Radiotherapy, S. Shen et al., Adv. Funct. Mater., 27, 1700250 (2017); DOI: 10.1002/adfm.201700250.
High-Performance 2D Rhenium Disulfi de (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment, J. Shim et al., Adv. Mater., 28, 6985–6992 (2016); DOI: 10.1002/adma.201601002.