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Product Code M2270A1-100mg
Price £250 ex. VAT

UGH3, host for highly efficient blue PHOLEDs

High purity (>99.0%) effective HBL material

UGH3, 1,3-bis(triphenylsilyl)benzene, is an isomer to UGH-2, 1,4-bis(triphenylsilyl)benzene.

UGH3 is an ultrahigh energy gap (4.40 eV) organosilicon compounds and a weak electron-transport-type host for highly efficient blue PHOLEDs. UGH3 has a high triplet energy (ET=3.1 eV) and can also be used as a host material to dilute exciplex, to enhance TADF-OLED optical and electrical device performance. Having a deep HOMO energy level (7.2 eV), UGH3 can also be used as an effective hole blocking layer material.

Both UGH2 and UGH3 have low glass transition temperatures (Tg) below 100 °C. BSB, 4,4'-di(triphenylsilyl)-biphenyl, however, offers better morphology of OLED device films for higher device performance and stability with higher Tg at 100 °C.

General Information

CAS number 18920-16-6
Chemical formula C42H34Si2
Molecular weight 594.89 g/mol
Absorption λmax 265 nm in THF
Fluorescence λem 418 nm
HOMO/LUMO HOMO = 7.20 eV, LUMO = 2.80 eV, ET =3.1 eV [1]
Full chemical name 1,3-Bis(triphenylsilyl)benzene
Synonyms UGH-3
Classification / Family Phosphorescent blue host material, Hole blocking materials, Sublimed materials

Product Details

Purity Sublimed >99.0% (HPLC)
Melting point Tg = 46 °C, TGA: >280 °C (0.5% weight loss)
Appearance White powder/crystals

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the sublimed materials.

Chemical Structure

UGH3, 1,3-Bis(triphenylsilyl)benzene chemical structure
Chemical Structure of 1,3-bis(triphenylsilyl)benzene (UGH3), CAS 18920-16-6

Device Structure(s)

Device structure ITO (70 nm)/NPB (40 nm)/mCP (7.5 nm)/UGH3:FIrpic:Bt2Ir(acac) (14%, 0.3%) (30 nm)/UGH3 (5 nm)/Bphen (50 nm)/LiF (1 nm)/Al (120 nm) [2]
Colour White white light emitting device
Max. Current Efficiency 47.5 cd/A
Max. EQE 18.9 %
Max. Power Efficiency 36.6 Im/W
Device structure ITO (70 nm)/NPB (40 nm)/mCP (7.5 nm)/UGH3:mCP (7:3):14 wt%FIrpic:0.3 wt% Bt2Ir(acac) (30 nm)/UGH3 (5 nm)/Bphen (50 nm)/LiF (1 nm)/Al (120 nm) [2]
Colour White white light emitting device
Max. Current Efficiency 47.6 cd/A
Max. EQE 18.9 %
Max. Power Efficiency 40.9 Im/W
Device structure ITO/NPB (40 nm)/TSBPA (10 nm)|TSBPA:PO-T2T 1:1 in 50 vol % UGH-3 (40 nm)|POT2T (50 nm)|LiF (1 nm)|Al (100 nm) [3]
Colour Green green light emitting device
Max. EQE 19.2 %


Grade Order Code Quantity Price
Sublimed(>99.0% purity) M2270A1 100 mg £250
Sublimed(>99.0% purity) M2270A1 250 mg £500
Sublimed(>99.0% purity) M2270A1 500 mg £800
Sublimed(>99.0% purity) M2270A1 1 g £1300

MSDS Documentation


Literature and Reviews

  1. Arylsilanes and siloxanes as optoelectronic materials for organic light-emitting diodes (OLEDs), D. Sun et al., J. Mater. Chem. C, 3, 9496-9508 (2015); DOI: 10.1039/C5TC01638J.
  2. Improved Performance of White Phosphorescent Organic Light-Emitting Diodes through a Mixed-Host Structure, ETRI. J., 31 (6), 642-646 (2009); J. Lee et al., DOI: 10.4218/etrij.09.1209.0005.
  3. Less Is More: Dilution Enhances Optical and Electrical Performance of a TADF Exciplex, M. Colella et al., J. Phys. Chem. Lett., 10, 793−798 (2019); DOI: 10.1021/acs.jpclett.8b03646.
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