Tungsten Ditelluride Crystal

Order Code: M2112A10
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Size Product code Size description* Quantity (EA) Price
Small M2112A10 >10 mm2 1 £397.00
Medium M2112A25 >25 mm2 1 £637.00
Large** M2112A00 >100 mm2 1 £1730.00

*typical representative size, areas/dimensions may vary

**item with a lead time of 2-3 weeks, please contact for more information

General Information

CAS number 12067-76-4
Chemical formula WTe2
Molecular weight 439.04 g/mol
Bandgap  ~0.7 eV [1]
Synonyms Tungsten telluride, Tungsten (IV) telluride
Classification/ Family Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science


Product Details

Form Single Crystal
Acquisition Method Synthetic - Chemical Vapour Transport (CVT)
Purity ≥ 99.999%
Structure Orthorhombic Td
Electronic properties 2D Semiconductor
Melting point ‎1020 °C (lit.)
Colour Metallic Black/dark brown


General Description 

2D-layered tungsten ditelluride (WTe2) has recently received great research interest for its unique, non-saturating, and extremely large positive magnetoresistance (XMR) behaviour. With perfectly balanced electron-hole populations, this particular non-saturating XMR identified applications for WTe2 in information processing and storage devices.

In ambient conditions, WTe2 crystallises in a orthorhombic lattice - where tungsten atoms are coordinated by tellurium atoms in an octahedral environment. The unit cell contains two Te-W-Te layers (held together by van der Waals interaction), with one sheet rotating 180◦ with respect to the other. This stacking sequence is referred to as a 'distorted 1T (Td) structure'.

Td-WTe2 was the first material proposed to be a type II Weyl semimetal, with a reduced density of states at the Fermi level coming from a small overlap between valence and conduction bands without a band gap. It has been reported that even single and dual-layer WTe2 films preserve the semimetallic nature, and both the films have equal hole and electron carrier concentrations. Additionally, WTe2 has been reported to exhibit pressure-induced superconductivity.

WTe2-Tungsten Ditelluride Crystal-product image
Chemical structure of Tungsten Ditelluride's distorted 1T (Td) structure.


With the distorted 1T (Td) form being thermodynamically-favoured and semi-metal in nature, WTefinds applications in pressure-induced superconductivity, memory storage devices, batteries, catalyst, spintronics, and thermo-electric devices.


Tungsten ditelluride (WTe2is manufactured via chemical vapour transport (CVT) crystallisation, with high purity levels (>99.999%).


Tungsten ditelluride is a great source for obtaining  mono- and few-layer WTe2 via mechanical or liquid exfoliation. Single crystals can also be used directly for optical and scanning probe microscopy (such as AFM and TEM studies).


Literature and Reviews

  1. Tungsten Ditelluride: a layered semimetal, C-H. Lee et al., Sci. Rep., 5, 10013 (2015); DOI: 10.1038/srep10013.
  2. Visualizing Type-II Weyl Points in Tungsten Ditelluride by Quasiparticle Interference, C-L. Lin et al., ACS Nano, 11 (11), 11459–11465 (2017);
    DOI: 10.1021/acsnano.7b06179
  3. Three-dimensionality of the bulk electronic structure in WTe2, Y. Wu et al., Phys. Rev. B, 95, 195138 (2017) DOI: 10.1103/PhysRevB.95.195138.,
  4. Electronic Structure Basis for the Extraordinary Magnetoresistance in WTe2, I. Pletikosić et al., Phys. Rev. Lett., 113, 216601 (2014); DIO: 10.1103/PhysRevLett.113.216601.
  5. MoTe2: A Type-II Weyl Topological Metal, Z. Wang et al., Phys. Rev. Lett., 117, 056805 (2016); DOI: 10.1103/PhysRevLett.117.056805.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.