Tungsten Disulfide Crystal
|Size||Product code||Size description*||Quantity (EA)||Price|
*typical representative size, areas/dimensions may vary
**item with a lead time of 2-3 weeks, please contact for more information
|Molecular weight||247.97 g/mol|
|Bandgap||1.4 - 2.01 eV |
|Synonyms||Tungsten sulphide, Tungsten sulfide, Tungsten (IV) sulfide|
|Classification / Family||Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science|
|Preparation||Synthetic - Chemical Vapour Transport (CVT)|
|Electronic properties||2D semiconductor|
|Melting point||1250 °C (lit.)|
Like other TMDC family members, tungsten disulfide (WS2) has a two-dimensional structure. It consists of a layer of hexagonally-arranged tungsten atoms positioned between two layers of hexagonally-arranged sulphur atoms.
Individual layers are held together by Van der Waals forces. This makes it possible for single to few-layer ultra-thin films to be prepared from bulk crystals using mechanical exfoliation techniques. The primitive unit cell of WS2 consists of one tungsten atom and two sulphur atoms, arranged in a trigonal prismatic configuration.
With a photoluminescence (PL) quantum yield that is almost two orders of magnitude higher at room temperature than MoS2, WS2 is one of the most popular 2D semiconducting TMDCs materials, and is widely explored for applications in light-emitting devices, solar cells, and photodetectors.
In the form of single or few-layer thin films, exfoliated WS2 nanosheets find applications ranging from light emitters, field effect transistors (FETs) and photovoltaics. Like many other TMDCs, they are actively used in condensed matter physics and photonics research.
Tungsten disulfide WS2 is manufactured using chemical vapour transport (CVT) crystallisation, with crystals having a purity in excess of 99.999%.
Tungsten disulfide WS2 can be used to prepare monolayer and few-layer WS2 by mechanical or liquid exfoliation.
Literature and Reviews
- Controlled Synthesis and Transfer of Large-Area WS2 Sheets: From Single Layer to Few Layers, A. Elı´as et al., ACS Nano, 7 (6), 5235–5242 (2013); DOI: 10.1021/nn400971k.
- Extraordinary Room-Temperature Photoluminescence in Triangular WS2 Monolayers, H. R. Gutiérrez et al., Nano Lett., 13 (8), 3447–3454 (2013); DOI: 10.1021/nl3026357.
- Controlled Growth of High-Quality Monolayer WS2 Layers on Sapphire and Imaging Its Grain Boundary, Y. Zhang et al., ACS Nano, 7 (10), 8963–8971 (2013); DOI: 10.1021/nn403454e.
- Photosensor Device Based on Few-Layered WS2 Films, N. Perea-López et al., Adv. Funct. Mater., 23, 5511–5517 (2013); DOI: 10.1002/adfm.201300760.
Direct Chemical Vapor Deposition Growth of WS2 Atomic Layers on Hexagonal Boron Nitride, M. Okada et al., ACS Nano, 8 (8), 8273–8277 (2014); DOI: 10.1021/nn503093k.