Tantalum Disulfide Crystal

Order Code: M2144A10
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Size Product code Size description* Quantity (EA) Price
Small M2144A10 >10 mm2 1 £395.6
Medium M2144A25 >25 mm2 1 £636.6

*typical representative size, areas/dimensions may vary

General Information

CAS number
Chemical formula TaS2
Molecular weight 245.07 g/mol
Bandgap n/a
Synonyms Dithioxotantalum, Tantalum (IV) sulfide, Bis(sulfanylidene)tantalum
Classification / Family Transition metal dichalcogenides (TMDCs), 2D charge density wave (CDW) materials, Nano-electronics, Nano-photonics, Superconductivity, Photovoltaic, Materials science

Product Details

Form Single Crystal
Preparation Synthetic - Chemical Vapour Transport (CVT)
Purity ≥ 99.999%
Structure Hexagonal (2H)
Electronic properties 2D CDW materials
Melting point > 1,300 °C
Appearance Dark brown

General Description

Tantalum disulfide (TaS2) crystals have stacked layers, in which sheets of transition metal atoms lie between the chalcogen atom sheets in an S-Ta-S sequence. In each sheet, atoms are closely packed in a hexagonal pattern. The chemical bonding within the layer is covalent, while individual layers are bound by van der Waals (vdWs). This makes intercalation between layers possible and allows layers to be peeled off by exfoliation.

Layered TaS2 exhibits a unique combination of valuable structural, mechanical, and electronic phases. 1T and 2H phases are the most representative structures. The distinction between two phases can be the S-Ta-S coordinated situations, which are recognised as octahedral coordination (1T) and prismatic coordination (2H).

Bulk 2H-TaS2, exhibits a charge density wave (CDW) transition at 70K and a superconductivity transition at 0.8K [1].

Tantalum disulfide-TaS2 2H and 1T structure
The 2H and 1T crystal structure of triclinic tantalum disulfide (TaS2).


2H-Tantalum disulfide has been used for the investigation of fundamental physical phenomena such as CDW associated with the dimensionality effect. Metallic 2H-TaS2 has also been proven to be an efficient electrocatalyst for the hydrogen evolution reactions (HER), with a performance that is comparable to platinum, owing to its abundant active sites concentrated at edges and basal-planes, as well as the self-optimising morphological change of 2H-TaS2.


Tantalum disulfide is manufactured using chemical vapour transport (CVT) crystallisation, with crystals having a purity in excess of 99.999%.


Tantalum disulfide single crystals can be used to prepare mono- and few-layer TaS2 by mechanical or liquid exfoliation.

Literature and Reviews

  1. Enhanced superconductivity in atomically thin TaS2, E. Navarro-Moratalla et al., Nat. Commun., 7:11043 (2016); DOI: 10.1038/ncomms11043.
  2. Enhanced superconductivity upon weakening of charge density wave transport in 2H-TaS2 in the two-dimensional limit, Y. Yang et al., Phys. Rev., 98, 035203 (2018); DOI: 10.1103/PhysRevB.98.035203.
  3. Toward Exploring the Structure of Monolayer to Few-layer TaS2 by Efficient Ultrasound-free Exfoliation, Y. Hu et al., Nanoscale Res. Lett., 13:20 (2018); DOI 10.1186/s11671-018-2439-z.
  4. Three-dimensional resistivity and switching between correlated electronic states in 1T-TaS2, D. Svetin et al., 7:46048 (2017); DOI: 10.1038/srep46048.