Source-Drain Deposition Mask, Low Density
Produce a total of 60 devices in a single evaporation
ensures conductivity between the metal electrodes and the p-doped silicon
Shadow masks for deposition of source drain contacts. Designed for use in the low density evaporation stack with our standard sized substrates of 20 x 15 mm. Each mask will work with up to 12 substrates, each with five OFETs to produce a total of 60 devices in a single evaporation.
Datasheet
Linear channels of width 1 mm with two designs available of either five identical channel lengths of 30 μm or variable channel lengths of 30, 40, 50, 60 and 80 μm (one per substrate)
| Number of OFETs | 60 (5 per substrate) |
| Channel length |
E291: 30 μm E292: 30, 40, 50, 60, 80 μm (one each per substrate) |
| Channel width | 1 mm |
| Contact pad size | 1 mm x 1 mm |
| Mask thickness | 35 µm |
| Channel bar tolerance | ±13 µm |
| Mask material | Hard electroformed nickel |
*E291/E292 yield of working devices is 90% (54/60).
The mask is designed in such a way that during the deposition of the gate electrodes on the corner of the substrate the metal should cover the edge of the substrate as well. This ensures conductivity between the metal electrodes and the p-doped silicon. If you find the edges of the substrate not to be conductive you must scratch the edges of the substrate to remove the insulating silicon oxide in correspondence with the corner where the gate electrode will be deposited.
B-Grade Masks
Masks with one channel that falls outside of our quality standards are listed as B-Grade. The other 59 channels on these masks are of the same standard as on our A-Grade masks. It is possible that the substandard channel may produce a working device, however this cannot be guaranteed. Therefore, these B-Grade masks are offered at a discounted price.
System Overview
System Overview
The low density fabrication system has four different masks available (source-drain, gate deposition, active area deposition, and insulator deposition) to allow the fabrication of devices in any geometry (top/bottom gates and top/bottom source-drain). The diagrams below show the features on each of the individual masks as well as how they fit together on a substrate.
Note that silicon oxide substrates do not need a gate mask which simplifies fabrication, however the use of a gate mask with quartz-glass substrates can allow lower operating voltages and lower parasitic capacitance.
