Gate Deposition Mask, Low Density
Substrates and Fabrication
Low Density Gate Deposition Mask
Enabling good deposition resolution
An evaporation mask for deposition of gate contacts. For use with the low density OFET system. A 100 μm standoff-spacer ensures that the mask does not touch the substrate while still enabling good deposition resolution.
Mask with direct contact (no spacer): For sputtering and other non-directional deposition systems, as well as for thermal deposition systems with oblique angles or a very short throw, we recommend the use of the direct contact mask to get well-defined edges.
Mask with 100 μm spacer: For normal thermal evaporation systems we recommend the use of masks with the 100 μm spacer to help avoid scratches and allow better out-gassing.
Datasheet
| Size | 75 mm x 75 mm (2.95" x 2.95") |
|---|---|
| Width | 1.7mm without spacer, 1.8mm with spacer (exc. bolts) |
| Material | Stainless steel |
| Capacity | 12 substrates |
