Gate Deposition Mask - Low-Density OFETs


Order Code: E305-SPC
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An evaporation mask for deposition of gate contacts. For use with the low density OFET system. A 200 μm standoff-spacer ensures that the mask does not touch the substrate while still enabling good deposition resolution.

Mask with direct contact (no spacer): For sputtering and other non-directional deposition systems, as well as for thermal deposition systems with oblique angles or a very short throw, we recommend the use of the direct contact mask to get well-defined edges.

Mask with 200 μm spacer: For normal thermal evaporation systems we recommend the use of masks with the 200 μm spacer to help avoid scratches and allow better out-gassing.

 

Datasheet

Size 75 mm x 75 mm
Width 1.9 mm (exc. bolts)
Material Stainless steel
Capacity 12 substrates

 

Low density OFET gate mask (technical drawing)
Dimensioned diagram of the low density OFET gate mask.

 

Low density OFET gate mask (dimensions)
Zoomed in dimensioned diagram of the low density OFET gate mask.

 

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.