Gate Deposition Mask, Low Density
OFET Device Testing & Fabrication Equipment, Substrates and Fabrication
Low Density Gate Deposition Mask
Enabling good deposition resolution
An evaporation mask for deposition of gate contacts. For use with the low density OFET system. A 100 μm standoff-spacer ensures that the mask does not touch the substrate while still enabling good deposition resolution.
Mask with direct contact (no spacer): For sputtering and other non-directional deposition systems, as well as for thermal deposition systems with oblique angles or a very short throw, we recommend the use of the direct contact mask to get well-defined edges.
Mask with 100 μm spacer: For normal thermal evaporation systems we recommend the use of masks with the 100 μm spacer to help avoid scratches and allow better out-gassing.
Datasheet
| Size | 75 mm x 75 mm (2.95" x 2.95") |
|---|---|
| Width | 1.7mm without spacer, 1.8mm with spacer (exc. bolts) |
| Material | Stainless steel |
| Capacity | 12 substrates |
System Overview
The low density fabrication system has four different masks available (source-drain, gate deposition, active area deposition, and insulator deposition) to allow the fabrication of devices in any geometry (top/bottom gates and top/bottom source-drain). The diagrams below show the features on each of the individual masks as well as how they fit together on a substrate.
Note that silicon oxide substrates do not need a gate mask which simplifies fabrication, however the use of a gate mask with quartz-glass substrates can allow lower operating voltages and lower parasitic capacitance.
