Molybdenum Ditelluride Crystal


Order Code: M2109A10
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Size Product code Size description* Quantity (EA) Price
Small M2109A10 >10 mm2 1 £357.00
Medium M2109A25 >25 mm2 1 £578.00
Large** M2109A00 >100 mm2 1 £1350.00

*typical representative size, areas/dimensions may vary

**item with a lead time of 2-3 weeks, please contact for more information

General Information

CAS number 12058-20-7
Chemical formula MoTe2
Molecular weight 351.14 g/mol
Bandgap 0.81 - 1.13 eV [1]
Synonym Molybdenum (IV) telluride, Molybdenum telluride
Classification / Family Transition metal dichalcogenides (TMDCs), 2D Semiconductor Materials, Nano-electronics, Nano-photonics, Electrochemical Energy Storage Systems, Topological superconductors, Materials science

Product Details

Form Single Crystal
Preparation Synthetic - Chemical Vapour Transport (CVT)
Purity ≥ 99.999%
Structure Hexagonal
Electronic properties 2D semiconductor
Melting point Decomposes
Colour Metallic black

 

General Description

Molybdenum Ditelluride MoTe2 (α-MoTe2) is a semiconductor with an indirect band gap of around 1.0 eV in bulk crystal or powder form, and a direct band-gap of about 1.1 eV in monolayer films. Like MoS2 and other 2D materials, MoTe2 has a layered structure. It is composed of hexagonal sheets of molybdenum atoms - these are located between two hexagonal planes of tellurium atoms. Individual sheets are held together by weak Van der Waals forces, and are stacked with 2H symmetry. 

It has a characteristic layered structure direct band-gap that extends to near infrared (NIR) wavelengths. Combined with the advantages of wet chemical exfoliation, MoTehas great potential for electronics - especially in photovoltaic technologies.

MoTeis also semi-metallic, with bulk MoTeexhibiting superconductivity at a transition temperature of 0.10 K.

 

MoTe2 Molybdenum Ditelluride Crystal product image

The hexagonal structure of Molybdenum ditelluride (MoTe2).


Video by Ossila


Applications

Monolayer or few-layer 2D MoTehas a direct band-gap and finds applications in transistors, photo-detectors, and photovoltaics. 

Synthesis

Molybdenum ditelluride MoTe2 is manufactured using chemical vapour transport (CVT) crystallisation, with purities in excess of 99.999% achieved.

Usage

Molybdenum ditelluride MoTe2 single crystal can be used to create monolayer and few-layer MoSe2 sheets by mechanical or liquid exfoliation.  

 

Literature and Reviews

  1. Exfoliated multilayer MoTe2 field-effect transistors, S. Fathipour et al., Appl. Phys. Lett. 105, 192101 (2014); doi: 10.1063/1.4901527.
  2. Optical Properties and Band Gap of Single- and Few-Layer MoTe2
    Crystals, C. Ruppert et al., Nano Lett., 14, 6231−6236 (2014); DIO: 10.1021/nl502557g.
  3. Two-dimensional MoTe2 materials: From synthesis, identification, and charge transport to electronics applications, Y. Chang et al, Jpn. J. Appl. Phys. 55 1102A1 (2016); DIO: 10.7567/JJAP.55.1102A1.
  4. Unified Description of the Optical Phonon Modes in N‑Layer MoTe2, G. Froehlicher et al., Nano Lett., 15, 6481−6489 (2015); DOI: 10.1021/acs.nanolett.5b02683.
  5. Fast MoTe2 Waveguide Photodetector with High Sensitivity at Telecommunication Wavelengths, P. Ma et al., ACS Photonics, 5, 1846−1852 (2018); DOI: 10.1021/acsphotonics.8b00068.
  6. Superconductivity in Weyl semimetal candidate MoTe2, Y. Qi et al., Nat. Commun., 7:11038 (2016); DOI: 10.1038/ncomms11038.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.