Molybdenum Ditelluride Crystal
|Size||Product code||Size description*||Quantity (EA)||Price|
*typical representative size, areas/dimensions may vary
**item with a lead time of 2-3 weeks, please contact for more information
|Molecular weight||351.14 g/mol|
|Bandgap||0.81 - 1.13 eV |
|Synonym||Molybdenum (IV) telluride, Molybdenum telluride|
|Classification / Family||Transition metal dichalcogenides (TMDCs), 2D Semiconductor Materials, Nano-electronics, Nano-photonics, Electrochemical Energy Storage Systems, Topological superconductors, Materials science|
|Preparation||Synthetic - Chemical Vapour Transport (CVT)|
|Electronic properties||2D semiconductor|
Molybdenum Ditelluride MoTe2 (α-MoTe2) is a semiconductor with an indirect band gap of around 1.0 eV in bulk crystal or powder form, and a direct band-gap of about 1.1 eV in monolayer films. Like MoS2 and other 2D materials, MoTe2 has a layered structure. It is composed of hexagonal sheets of molybdenum atoms - these are located between two hexagonal planes of tellurium atoms. Individual sheets are held together by weak Van der Waals forces, and are stacked with 2H symmetry.
It has a characteristic layered structure direct band-gap that extends to near infrared (NIR) wavelengths. Combined with the advantages of wet chemical exfoliation, MoTe2 has great potential for electronics - especially in photovoltaic technologies.
MoTe2 is also semi-metallic, with bulk MoTe2 exhibiting superconductivity at a transition temperature of 0.10 K.
The hexagonal structure of Molybdenum ditelluride (MoTe2).
Monolayer or few-layer 2D MoTe2 has a direct band-gap and finds applications in transistors, photo-detectors, and photovoltaics.
Molybdenum ditelluride MoTe2 is manufactured using chemical vapour transport (CVT) crystallisation, with purities in excess of 99.999% achieved.
Molybdenum ditelluride MoTe2 single crystal can be used to create monolayer and few-layer MoSe2 sheets by mechanical or liquid exfoliation.
Literature and Reviews
- Exfoliated multilayer MoTe2 field-effect transistors, S. Fathipour et al., Appl. Phys. Lett. 105, 192101 (2014); doi: 10.1063/1.4901527.
Optical Properties and Band Gap of Single- and Few-Layer MoTe2
Crystals, C. Ruppert et al., Nano Lett., 14, 6231−6236 (2014); DIO: 10.1021/nl502557g.
- Two-dimensional MoTe2 materials: From synthesis, identification, and charge transport to electronics applications, Y. Chang et al, Jpn. J. Appl. Phys. 55 1102A1 (2016); DIO: 10.7567/JJAP.55.1102A1.
- Unified Description of the Optical Phonon Modes in N‑Layer MoTe2, G. Froehlicher et al., Nano Lett., 15, 6481−6489 (2015); DOI: 10.1021/acs.nanolett.5b02683.
- Fast MoTe2 Waveguide Photodetector with High Sensitivity at Telecommunication Wavelengths, P. Ma et al., ACS Photonics, 5, 1846−1852 (2018); DOI: 10.1021/acsphotonics.8b00068.
- Superconductivity in Weyl semimetal candidate MoTe2, Y. Qi et al., Nat. Commun., 7:11038 (2016); DOI: 10.1038/ncomms11038.
To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.