Molybdenum Ditelluride Crystal


Not in stock (price excludes taxes)
Order Code: M2109A10
MSDS sheet

Pricing

Size Product code Size description* Quantity (EA) Price
Small M2109A10 >10 mm2 1 £356.6
Medium M2109A25 >25 mm2 1 £578.2
Large** M2109A00 >100 mm2 1 £1348.5

*typical representative size, areas/dimensions may vary

**item with a lead time of 2-3 weeks, please contact for more information

General Information

CAS number 12058-20-7
Chemical formula MoTe2
Molecular weight 351.14 g/mol
Bandgap 0.81 - 1.13 eV [1]
Synonym Molybdenum (IV) telluride, Molybdenum telluride
Classification / Family Transition metal dichalcogenides (TMDCs), 2D Semiconductor Materials, Nano-electronics, Nano-photonics, Electrochemical Energy Storage Systems, Topological superconductors, Materials science

Product Details

Form Single Crystal
Preparation Synthetic - Chemical Vapour Transport (CVT)
Purity ≥ 99.999%
Structure Hexagonal
Electronic properties 2D semiconductor
Melting point Decomposes
Colour Metallic black

 

General Description

Molybdenum Ditelluride MoTe2 (α-MoTe2) is a semiconductor with an indirect band gap of around 1.0 eV in bulk crystal or powder form, and a direct band-gap of about 1.1 eV in monolayer films. Like MoS2 and other 2D materials, MoTe2 has a layered structure. It is composed of hexagonal sheets of molybdenum atoms - these are located between two hexagonal planes of tellurium atoms. Individual sheets are held together by weak Van der Waals forces, and are stacked with 2H symmetry. 

It has a characteristic layered structure direct band-gap that extends to near infrared (NIR) wavelengths. Combined with the advantages of wet chemical exfoliation, MoTehas great potential for electronics - especially in photovoltaic technologies.

MoTeis also semi-metallic, with bulk MoTeexhibiting superconductivity at a transition temperature of 0.10 K.

 

MoTe2 Molybdenum Ditelluride Crystal product image

The hexagonal structure of Molybdenum ditelluride (MoTe2).

Applications

Monolayer or few-layer 2D MoTehas a direct band-gap and finds applications in transistors, photo-detectors, and photovoltaics. 

 

Synthesis

Molybdenum ditelluride MoTe2 is manufactured using chemical vapour transport (CVT) crystallisation, with purities in excess of 99.999% achieved.

Usage

Molybdenum ditelluride MoTe2 single crystal can be used to create monolayer and few-layer MoSe2 sheets by mechanical or liquid exfoliation.  

 

Literature and Reviews

  1. Exfoliated multilayer MoTe2 field-effect transistors, S. Fathipour et al., Appl. Phys. Lett. 105, 192101 (2014); doi: 10.1063/1.4901527.
  2. Optical Properties and Band Gap of Single- and Few-Layer MoTe2
    Crystals, C. Ruppert et al., Nano Lett., 14, 6231−6236 (2014); DIO: 10.1021/nl502557g.
  3. Two-dimensional MoTe2 materials: From synthesis, identification, and charge transport to electronics applications, Y. Chang et al, Jpn. J. Appl. Phys. 55 1102A1 (2016); DIO: 10.7567/JJAP.55.1102A1.
  4. Unified Description of the Optical Phonon Modes in N‑Layer MoTe2, G. Froehlicher et al., Nano Lett., 15, 6481−6489 (2015); DOI: 10.1021/acs.nanolett.5b02683.
  5. Fast MoTe2 Waveguide Photodetector with High Sensitivity at Telecommunication Wavelengths, P. Ma et al., ACS Photonics, 5, 1846−1852 (2018); DOI: 10.1021/acsphotonics.8b00068.
  6. Superconductivity in Weyl semimetal candidate MoTe2, Y. Qi et al., Nat. Commun., 7:11038 (2016); DOI: 10.1038/ncomms11038.