Molybdenum Ditelluride Crystal
Order Code: M2109A10MSDS sheet
|Size||Product code||Size description*||Quantity (EA)||Price|
*typical representative size, areas/dimensions may vary
**item with a lead time of 2-3 weeks, please contact for more information
|Molecular weight||351.14 g/mol|
|Bandgap||0.81 - 1.13 eV |
|Synonym||Molybdenum (IV) telluride, Molybdenum telluride|
|Classification / Family||Transition metal dichalcogenides (TMDCs), 2D Semiconductor Materials, Nano-electronics, Nano-photonics, Electrochemical Energy Storage Systems, Topological superconductors, Materials science|
|Preparation||Synthetic - Chemical Vapour Transport (CVT)|
|Electronic properties||2D semiconductor|
Molybdenum Ditelluride MoTe2 (α-MoTe2) is a semiconductor with an indirect band gap of around 1.0 eV in bulk crystal or powder form, and a direct band-gap of about 1.1 eV in monolayer films. Like MoS2 and other 2D materials, MoTe2 has a layered structure. It is composed of hexagonal sheets of molybdenum atoms - these are located between two hexagonal planes of tellurium atoms. Individual sheets are held together by weak Van der Waals forces, and are stacked with 2H symmetry.
It has a characteristic layered structure direct band-gap that extends to near infrared (NIR) wavelengths. Combined with the advantages of wet chemical exfoliation, MoTe2 has great potential for electronics - especially in photovoltaic technologies.
MoTe2 is also semi-metallic, with bulk MoTe2 exhibiting superconductivity at a transition temperature of 0.10 K.
The hexagonal structure of Molybdenum ditelluride (MoTe2).
Monolayer or few-layer 2D MoTe2 has a direct band-gap and finds applications in transistors, photo-detectors, and photovoltaics.
Molybdenum ditelluride MoTe2 is manufactured using chemical vapour transport (CVT) crystallisation, with purities in excess of 99.999% achieved.
Molybdenum ditelluride MoTe2 single crystal can be used to create monolayer and few-layer MoSe2 sheets by mechanical or liquid exfoliation.
Literature and Reviews
- Exfoliated multilayer MoTe2 field-effect transistors, S. Fathipour et al., Appl. Phys. Lett. 105, 192101 (2014); doi: 10.1063/1.4901527.
Optical Properties and Band Gap of Single- and Few-Layer MoTe2
Crystals, C. Ruppert et al., Nano Lett., 14, 6231−6236 (2014); DIO: 10.1021/nl502557g.
- Two-dimensional MoTe2 materials: From synthesis, identification, and charge transport to electronics applications, Y. Chang et al, Jpn. J. Appl. Phys. 55 1102A1 (2016); DIO: 10.7567/JJAP.55.1102A1.
- Unified Description of the Optical Phonon Modes in N‑Layer MoTe2, G. Froehlicher et al., Nano Lett., 15, 6481−6489 (2015); DOI: 10.1021/acs.nanolett.5b02683.
- Fast MoTe2 Waveguide Photodetector with High Sensitivity at Telecommunication Wavelengths, P. Ma et al., ACS Photonics, 5, 1846−1852 (2018); DOI: 10.1021/acsphotonics.8b00068.
- Superconductivity in Weyl semimetal candidate MoTe2, Y. Qi et al., Nat. Commun., 7:11038 (2016); DOI: 10.1038/ncomms11038.