Molybdenum Disulfide Few-Layer Film

Order Code: M2167F11
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Substrate Product code Size Quantity (EA) Price
SiO2/Si M2167F11 1 cm × 1 cm 1
Sapphire M2168F11 1 cm × 1 cm 1 £317.5

General Information

CAS number 1317-33-5
Chemical formula MoS2
Molecular weight 160.07 g/mol
Bandgap 1.23 eV
Synonyms Molybdenum sulfide, Molybdenum disulphide. Molybdenum (IV) sulfide
Classification / Family Transition metal dichalcogenides (TMDCs), 2D Semiconductor Materials, Nano-electronics, Nano-photonics, Materials science

Product Details

Substrate SiO2/Si Sapphire
Product code M2167F11 M2168F11
Size 1 cm × 1 cm* 1 cm × 1 cm*
Growth Method CVD synthesis CVD synthesis
Appearance Transparent Transparent
Purity > 99% > 99%
Transparency > 97% > 97%
Coverage > 95% > 95%
Number of Layers 2-5 2-5
Sheet Resistance n.a. n.a.
Transfer method Directly grown
Directly grown
Substrate Thickness 300 nm 250 µm

* Other sizes available: 2 cm × 2 cm or 2 inches in diameter, 4 inches in diameter custom-made sizes, please contact us for more details.


General Description 

Few-layer molybdenum disulfide (MoS2) is considered to be one of the most attractive materials for next-generation nanoelectronics. This is due to its silicon-level charge mobility and high current on/off ratio in thin-film transistors. Compared to monolayer  MoS2 (which needs a deposition of an additional high-k dielectric layer such as HfO2), few-layer MoS2 can be operated on its own. This makes it more appealing for fabricating transistors and other optoelectronic devices.

High-quality molybdenum disulfide (MoS2) few-layer films are available on 2 different substrates: SiO2/Si and sapphire. Different sizes and substrates of few-layer MoSfilms are also available via custom order. Please contact us for more details.

  • Glass (1 cm × 1 cm, 2 cm × 2 cm, 2 inch in diameter, 4 inch in diameter or custom-made sizes)
  • Silicon (1 cm × 1 cm, 2 cm × 2 cm, 2 inch in diameter, 4 inch in diameter or custom-made sizes)
  • Quartz (1 cm × 1 cm, 2 cm × 2 cm, 2 inch in diameter, 4 inch in diameter or custom-made sizes)
  • Copper (1 cm × 1 cm, 2 cm × 2 cm, 2 inch in diameter, 4 inch in diameter or custom-made sizes)



Molybdenum disulfide (MoS2) few-layer film, with an impressive direct band gap of 1.9 eV in the monolayer regime, has promising potential applications in nanoelectronics, optoelectronics, and flexible devices. MoS2 few-layer films can also be made into heterostructures for energy conversation and storage devices, and used as a catalyst for hydrogen revolution reactions (HER).


High quality molybdenum disulfide (MoS2) few-layer films were grown directly on the substrates (SiO2/Si and Sapphire) by chemical vapour deposition (CVD) method. The films were later transferred to the desired substrates using wet chemical transfer process.


MoS2 few-layer film can be used in research purposes such as microscopic analysis, photoluminescence and Raman spectroscopy studies. Few-layer MoS2 film can also be transferred to other substrates.


Literature and Reviews

  1. Tunable Charge-Trap Memory Based on Few-Layer MoS2, E. Zhang et al., ACS Nano, 9 (1), 612–619 (2015); DIO: 10.1021/nn5059419.
  2. Few-Layer MoS2: A Promising Layered Semiconductor, R. Ganatra et al., ACS Nano, 8 (5), 4074–4099 (2014); DOI: 10.1021/nn405938z.
  3. Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments, D. Tsai et al., ACS Nano, 7 (5), 3905–3911 (2013); DOI: 10.1021/nn305301b.
  4. Optical Identification of Single- and Few-Layer MoS2 Sheets, H. Li et al., small, 8 (5), 682–686 (2012); DOI: 10.1002/smll.201101958.
  5. Few-Layer MoS 2 Flakes as Active Buffer Layer for Stable Perovskite Solar Cells, A. Capasso et al., Adv. Energy Mater. 2016, 6, 1600920 (2016); DOI: 10.1002/aenm.201600920.