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Molybdenum Disulfide Few-Layer Film CAS 1317-33-5
Product Code M2167F11-1EA
Price £420 ex. VAT
£ GBP

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MoS2 Few-Layer Film, high purity 2D material

For applications in nanoelectronics, optoelectronics, and flexible devices

Few-layer molybdenum disulfide (MoS2), CAS number 1317-33-5, is considered to be one of the most attractive materials for next-generation nanoelectronics. This is due to its silicon-level charge mobility and high current on/off ratio in thin-film transistors. Compared to monolayer MoS2 (which needs a deposition of an additional high-k dielectric layer such as HfO2), few-layer MoS2 can be operated on its own. This makes it more appealing for fabricating transistors and other optoelectronic devices.

High Purity Molybdenum Disulfide (MoS2) Powder

High Purity

>99% Purity Molybdenum Disulfide Few-Layer Film

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Low Cost 1317-33-5

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Low Cost Molybdenum Disulfide

Applications of Molybdenum Disulfide Few-Layer Film

Applications

Applications in nanoelectronics, optoelectronics, and flexible devices

Applications

Molybdenum disulfide (MoS2) few-layer film, with an impressive direct band gap of 1.9 eV in the monolayer regime, has promising potential applications in nanoelectronics, optoelectronics, and flexible devices.

MoS2 few-layer films can also be made into heterostructures for energy conversation and storage devices, and used as a catalyst for hydrogen revolution reactions (HER).

Synthesis

High quality molybdenum disulfide (MoS2) few-layer films were grown directly on the substrates (SiO2/Si and Sapphire) by chemical vapour deposition (CVD) method. The films were later transferred to the desired substrates using wet chemical transfer process.

Usage

MoS2 few-layer film can be used in research purposes such as microscopic analysis, photoluminescence and Raman spectroscopy studies. Few-layer MoS2 film can also be transferred to other substrates.

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Technical Data

CAS Number 1317-33-5
Chemical Formula MoS2
Molecular Weight 160.07 g/mol
Bandgap 1.23 eV
Synonyms Molybdenum sulfide, Molybdenum disulphide, Molybdenum(IV) sulfide
Classification / Family Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science

Product Details

Substrate SiO2/Si Sapphire
Product Code M2167F11 M2168F11
Size 1 cm × 1 cm* 1 cm × 1 cm*
Growth Method CVD synthesis CVD synthesis
Appearance Transparent Transparent
Purity >99% >99%
Transparency >97% >97%
Coverage >95% >95%
Number of Layers 2 - 5 2 - 5
Sheet Resistance N/A N/A
Transfer Method Directly grown Directly grown
Substrate Thickness 300 nm (oxide layer) 300 µm

*Other sizes available: up to 2 cm × 2 cm or 2 inches in diameter (sapphire substrate only).

High-quality molybdenum disulfide (MoS2) few-layer films are available on two different substrates as standard: SiO2/Si and Sapphire. Different substrates of few-layer MoS2 films, including Glass, Silicon and Quartz are also available via custom order. 

Please contact us for more information regarding custom products.

    MSDS Documents

    MoS2 MSDSMolybdenum disulfide monolayer film on silicon

    MoS2 MSDSMolybdenum disulfide monolayer film on sapphire

    Pricing Table

    Substrate Product code Size Quantity (EA) Price
    SiO2/Si M2167F11 1 cm × 1 cm 1 £420
    Sapphire M2168F11 1 cm × 1 cm 1 £420

    Literature and Reviews

    • Tunable Charge-Trap Memory Based on Few-Layer MoS2, E. Zhang et al., ACS Nano, 9 (1), 612–619 (2015); DIO: 10.1021/nn5059419.
    • Few-Layer MoS2: A Promising Layered Semiconductor, R. Ganatra et al., ACS Nano, 8 (5), 4074–4099 (2014); DOI: 10.1021/nn405938z.
    • Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments, D. Tsai et al., ACS Nano, 7 (5), 3905–3911 (2013); DOI: 10.1021/nn305301b.
    • Optical Identification of Single- and Few-Layer MoS2 Sheets, H. Li et al., small, 8 (5), 682–686 (2012); DOI: 10.1002/smll.201101958.
    • Few-Layer MoS 2 Flakes as Active Buffer Layer for Stable Perovskite Solar Cells, A. Capasso et al., Adv. Energy Mater. 2016, 6, 1600920 (2016); DOI: 10.1002/aenm.201600920.
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