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Product Code M2104A1-100mg
Price £250 ex. VAT

CzSi, TADF host material for blue electrophosphorescence

Exhibits enhanced morphological and superior electrochemical stability


CzSi is known for its high triplet energy, wide band-gap, and high glass-transition temperature (Tg >131 °C). It is one of the most widely-used TADF host materials for blue electrophosphorescence.

It possesses bulky, sterically-hindered triphenylsilyl substitutions on electrochemically-active C3 and C6 positions of carbazole. With a nearly-perfect 90° dihedral angle between its carbazole and tert-butylphenyl groups, CzSi exhibits enhanced morphological and superior electrochemical stability.

General Information

CAS number 898546-82-2
Full name 9-(4-tert-Butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole
Chemical formula C58H49NSi2
Molecular weight 816.19 g/mol
Absorption λmax 275 nm in CH2Cl2
Fluorescence λem 354 nm in CH2Cl2
HOMO/LUMO HOMO = 6.0 eV, LUMO = 2.5 eV; T1=3.02 eV [1]
Classification / Family Carbazole, TADF blue emitter host materials, Hole-transport layer materials, Phosphorescent organic light-emitting devices (PHOLEDs), Sublimed materials

Product Details

Purity Sublimed >99.0% (HPLC)
Melting point TGA: >320 °C (0.5% weight loss)
Appearance Off-white powder/crystals

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials.

Chemical Structure

Chemical structure of CzSi
Chemical Structure of 9-(4-tert-Butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole (CzSi).

Device Structure(s)

Device structure ITO/PEDOT:PSS (30 nm)/DPAS (17.5 nm)/TCTA (2.5 nm)/CzSi doped with 8 wt% FIrpic (25 nm)/TAZ (50 nm)/LiF (0.5 nm)/Al (150 nm) [2]
Colour Blue blue light emitting device
Max. Current Efficiency 30.6 cd/A
Max. EQE 15.7%
Max. Power Efficiency 26.7 Im/W
Device structure ITO/TAPC (30 nm)/TCTA (10 nm)/CzSi (3 nm)/CzSi doped with 4 wt% of 2c* (25 nm)/UGH2 doped with 4 wt% of 2c*(3 nm)/UGH2 (2 nm)/TmPyPB (50 nm)/LiF (0.8 nm)/Al (150 nm) [3]
Colour Blue blue light emitting device
Max. Current Efficiency 22.3 cd/A
Max. EQE 11%
Max. Power Efficiency 16.7 Im/W
Device structure (ITO)/a-NPD (30 nm)/TCTA (20 nm)/CzSi (3 nm)/CzSi doped with 6 wt% 2* (35 nm)/UGH2 doped with 6* wt%Ir(fppz)2(dfbdp) (3 nm)/UGH2 (2 nm)/BCP (50 nm)/Cs2CO(2 nm)/Ag (150 nm) [4]
Colour Blue blue light emitting device
Max. Current Efficiency 11.4 cd/A
Max. EQE 11.9%
Max. Power Efficiency 7.9 Im/W
Device structure ITO/NPB (30 nm)/TCTA (20 nm)/FIrpic:CzSi (7%, 20 nm)/(DMBA)2Ir(acac):CBP (5%, 200 nm)/TAZ (50 nm)/ LiF (1 nm)/Al (100 nm) [5]
Colour White white light emitting device
Max. Current Efficiency 25.6 cd/A
Max. EQE 12.7%
Max. Power Efficiency 20.2 Im/W

*For chemical structure information, please refer to the cited references.

Pricing

Grade Order Code Quantity Price
Sublimed (>99.0% purity) M2104A1 100 mg £250
Sublimed (>99.0% purity) M2104A1 250 mg £500
Sublimed (>99.0% purity) M2104A1 500 mg £850
Sublimed (>99.0% purity) M2104A1 1 g £1300

MSDS Documentation

CzSi MSDSCzSi MSDS sheet

Literature and Reviews

  1. FIrpic: archetypal blue phosphorescent emitter for electroluminescence, E. Baranof et al., Dalton Trans., 44, 8318 (2015); DOI: 10.1039/c4dt02991g.
  2. Highly Efficient Organic Blue Electrophosphorescent Devices Based on 3,6-Bis(triphenylsilyl)carbazole as the Host Material, M-H. Tsai et al., Adv. Mater., 18, 1216–1220 (2006); DOI: 10.1002/adma.200502283.
  3. Iridium(III) Complexes of a Dicyclometalated Phosphite Tripod Ligand: Strategy to Achieve Blue Phosphorescence Without Fluorine Substituents and Fabrication of OLEDs, C-H. Lin et al., Angew. Chem., 123, 3240 –3244 (2011); DOI: 10.1002/ange.201005624 .
  4. En Route to High External Quantum Efficiency (~12%), Organic True-Blue-Light-Emitting Diodes Employing Novel Design of Iridium (III) Phosphors, Y-C. Chiu et al., Adv. Mater., 21, 2221–2225 (2009); DOI: 10.1002/adma.200802546.
  5. Highly efficient white organic light-emitting diodes based on broad excimer emission of iridium complex, G. Zhang et al., Org. Electronics 11, 1165–1171 (2010); doi:10.1016/j.orgel.2010.04.016.
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