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Molybdenum Diselenide Monolayer Film

CAS Number 12058-18-3

2D Materials, Low Dimensional Materials

Molybdenum Diselenide Monolayer Film CAS 12058-18-3
Product Code M2169F11-1EA
Price £640 ex. VAT
£ GBP

How to Order | Worldwide Shipping

High quality and high purity MoSe2 Monolayer Film

For applications in tunnel FETs and optoelectronic devices

Monolayer MoSe2 film (CAS number 12058-18-3) has a direct bandgap of about 1.5 eV, making it one of the most desirable 2D-layered structures in photovoltaic single-junction solar cells and photoelectrochemical cells. Monolayer MoSe2 film consists of two layers of Se atoms, with one layer of Mo atoms sandwiched in the middle (Se-Mo-Se).

High Purity Molybdenum Diselenide film

High Purity

High purity >99% Molybdenum Diselenide Film

Worldwide shipping for 12058-18-3

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Low Cost 12058-18-3

Low Cost

Low Cost Molybdenum Diselenide

Versatile Molybdenum Diselenide

Versatile

Applications in tunnel FETs and optoelectronic devices

Applications

Having a direct optical band gap of 1.48 eV with a photoluminescence peak at 840 nm, molybdenum diselenide monolayer film is ideal for applications in optoelectronics.

Also, with with its narrower bandgap, higher optical absorbance and larger spin-splitting energy than MoS2, MoSe2 ultrathin films are potentially better than MoS2 for the applications in tunnel FETs and optoelectronic devices.

Synthesis

High-quality molybdenum diselenide monolayer film was grown directly on the substrates (SiO2/Si) by the chemical vapour deposition (CVD) method.

Usage

MoSe2 monolayer film can be used for research purposes such as microscopic analysis, photoluminescence and Raman spectroscopy studies. Monolayer MoSe2 film can also be transferred to other substrates.

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Technical Data

CAS Number 12058-18-3
Chemical Formula MoSe2
Molecular Weight 253.86 g/mol
Bandgap 1.41 - 1.58 eV
Colour Black/Dark brown
Synonyms Molybdenum(IV) selenide, Molybdenum selenide
Classification / Family Transition metal dichalcogenides (TMDCs), 2D semiconductor Materials, Nano-electronics, Nano-photonics, Electrochemical energy storage system, Materials science

Product Details

Substrate SiO2/Si
Product Code M2169F11
Size 1 cm × 1 cm*
Growth Method CVD synthesis
Appearance Transparent
Purity >99%
Transparency >97%
Coverage >95%
Number of Layers 1
Sheet Resistance N/A
Transfer Method Directly grown
Substrate Thickness 300 nm (oxide layer)

*Other sizes available: up to 2 cm × 2 cm.

High-quality molybdenum diselenide (MoSe2) monolayer films are available on SiO2/Si as standard. Different substrates of monolayer MoSe2 films, including Sapphire, Glass, Silicon and Quartz are also available via custom order. 

Discontinuous isolated triangular crystals (crystal islands) films are also available via custom request. Please contact us for more information regarding custom products.

    MSDS Document

    Molybdenum diselenide monolayer film MSDSMolybdenum diselenide monolayer film

    Pricing Table

    Substrate Product Code Size Quantity (EA) Price
    SiO2/Si M2169F11 1 cm × 1 cm 1 £640

    Literature and Reviews

    • CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors, J. Xia et al., Nanoscale, 6, 8949 (2014); DOI: 10.1039/c4nr02311k.
    • Large-area synthesis of monolayer MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition, Y. Zhao et al., RSC Adv., 7, 27969 (2017); DOI: 10.1039/c7ra03642f.
    • Large-Area Synthesis of Monolayer and Few-Layer MoSe2 Films on SiO2 Substrates, X. Lu et al., Nano Lett. 2014, 14, 2419−2425 (2014); DIO: 10.1021/nl5000906.
    • Large-Area Single-Layer MoSe2 and Its van der Waals Heterostructures, G. Shim et al., ACS Nano, 2014, 8 (7), 6655–6662 (2014); DIO: 10.1021/nn405685j.
    • Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2, X. Wang et al., ACS Nano, 8 (5), 5125–5131 (2014); DOI: 10.1021/nn501175k.
    • Monolayer MoSe2 Grown by Chemical VaporDeposition for Fast Photodetection, Y. Chang et al., ACS Nano, 8 (8), 8582–8590 (2014); DOI: 10.1021/nn503287m.
    • Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2, Y. Zhang et al., Nat. nanotech., 9, 111-115 (2014); DOI: 10.1038/NNANO.2013.277.
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