FREE shipping to on qualifying orders when you spend or more, processed by Ossila BV. All prices ex. VAT. Qualifying orders ship free worldwide! Fast, secure, and backed by the Ossila guarantee. It looks like you are visiting from , click to shop in or change country. Orders to the EU are processed by our EU subsidiary.

It looks like you are using an unsupported browser. You can still place orders by emailing us on info@ossila.com, but you may experience issues browsing our website. Please consider upgrading to a modern browser for better security and an improved browsing experience.

Tungsten Diselenide (WSe2) Monolayer Film

CAS Number 12067-46-8

2D Semiconductor Materials, Low Dimensional Materials


Product Code M2223F11-1EA
Price $700 ex. VAT

Quality assured

Expert support

Volume discounts

Worldwide shipping

Fast and secure


High purity tungsten diselenide monolayer film

For applications in electronic and optoelectronic devices


Pristine tungsten diselenide (WSe2) is known to show ambipolar behaviour with a slightly hole conducting n-doped character. Doping treatments could increase the effective carrier mobilities up to four orders of magnitude above the threshold region with respect to the pristine WSe2, reaching maximum values of 82 cm2V-1s-1 (p-doping) and 25 cm2V-1s-1 (n-doping) for holes and electrons, respectively.

Chemical vapor deposition (CVD) grown tungsten diselenide monolayers show PLQY approaching 60%, exceeding that of exfoliated crystals by over an order of magnitude. Monolayer of tungsten diselenide is of particular interest since it possesses a direct band gap and tuneable charge transport behaviours, which make it suitable for a variety of electronic and optoelectronic applications. Monolayer WSe2 has a band gap smaller than monolayer MoS2 (∼1.65 eV for monolayer WSe2 versus 1.8 eV for monolayer MoS2). Top-gated field-effect transistors based on WSe2 monolayers using ionic gels as the dielectrics exhibit ambipolar characteristics, where the hole and electron mobility values are up to 90 and 7 cm2/Vs, respectively.

High Purity 12067-46-8

High Purity

≥99.999% Crystal Purity

Worldwide shipping for 12067-46-8

Worldwide shipping

Quick and reliable shipping

Low Cost 12067-46-8

Low Cost

Low Cost Tungsten Diselenide

Applications of Tungsten Diselenide

Applications

Applications in electronic and optoelectronic devices

Platinum FET Test Chips for 2D Materials

Test chips optimized for 2D materials
  • Affordable
  • Dual Channel Electrodes
  • Worldwide Shipping

Buy Online £200

Technical Data

CAS Number 12067-46-8
Chemical Formula WSe2
Molecular Weight 341.76 g/mol
Bandgap 1.65 eV
Synonyms Tungsten selenide, Tungsten(IV) Selenide 
Classification / Family Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science

Product Details

Substrate Sapphire - Double Side Polished
Product Code M2223F11
Size 1 cm × 1 cm*
Growth Method CVD synthesis
Appearance Transparent
Purity >99%
Transparency >97%
Coverage >95%
Number of Layers 1
Sheet Resistance N/A
Transfer Method Directly grown

*Other sizes available: up to 2 cm × 2 cm or 2 inches in diameter.

High-quality tungsten diselenide (WSe2) monolayer films are available on Sapphire as standard. Different substrates of monolayer WSefilms, including SiO2/SiGlassSilicon and Quartz are also available via custom order.

Discontinuous isolated triangular crystals (crystal islands) films are also available via custom request. Please contact us for more information regarding custom products.

MSDS Document

Tungsten Diselenide Monolayer Film MSDSTungsten Diselenide Monolayer Film MSDS Sheet

Literature and Reviews

  • Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications, J. Huang et al., ACS Nano, 8 (1), 923–930 (2014); DOI: 10.1021/nn405719x.
  • Observation of biexcitons in monolayer WSe2, Y. You et al., Nature Phys., 11, 477–481 (2015): DOI: 10.1038/nphys3324.
  • Electrical control of second-harmonic generation in a WSe2 monolayer transistor, K. Seyler et al., Nat. Nanotech 10, 407–411 (2015); DOI: 10.1038/nnano.2015.73.
  • Defect Activated Photoluminescence in WSe2 Monolayer, Z. Wu et al., J. Phys. Chem. C, 121 (22), 12294–12299 (2017); DOI: 10.1021/acs.jpcc.7b03585.
  • Evidence of indirect gap in monolayer WSe2, W. Hsu et al., Nat. Commun., 8, 929 (2017): DOI: 10.1038/s41467-017-01012-6.
  • Synthetic WSe2monolayers with highphotoluminescence quantum yield, H. Kim et al., Sci. Adv., 5, eaau4728 (2019); DOI: 10.1126/sciadv.aau47.
  • Role of Metal Contacts in High-Performance Phototransistors Based on WSe2 Monolayers, W. Zhang et al., ACS Nano, 8 (8), 8653–8661 (2014); DOI: 10.1021/nn503521c.
  • Ultrafast generation of pseudo-magnetic field for valley excitons in WSe2 monolayers, J. Kim et al., Science, 346 (6214), 1205-1208 (2014); DOI: 10.1126/science.125812.
  • Chemically Tuned p- and n-Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics, H. Ji et al., Adv. Mater., 31 (42), 1903613 (2019); DOI: 10.1002/adma.201903613.
  • Efficient phonon cascades in WSe2 monolayers, I. Paradisanos et al., Nat. Commun., 12, 538 (2021); DOI: 10.1038/s41467-020-20244-7.

To the best of our knowledge the information provided here is accurate. The values provided are typical at the time of manufacture and may vary over time and from batch to batch. Products may have minor cosmetic differences (e.g. to the branding) compared to the photos on our website. All products are for laboratory and research and development use only.

Return to the top