Prefabricated OFET Test Chips (High Density)

Order Code: S221

Price

(excluding Taxes)

£549.00


* Awaiting delivery of silicon substrates from manufacturer

* Expected available for delivery from: November 08, 2016

Mobility screening is made quick and simple with our prefabricated high density substrates; simply spin on your semiconductor to create up to 20 OFETs which can be tested within minutes using our high-density OFET test board.

We use silicon/silicon oxide substrates with thermally evaporated gold electrodes, plus optional OTS/PFBT treatment. Our standard prefabricated substrates are supplied in batches of ten and fabricated using our High Density OFET system; see schematics below for details.

We can also fabricate other custom substrates for your individual research requirements, so please contact us to discuss your needs. Lead times are two weeks for standard devices but this may vary for customised substrates.

 

Product
code
Channel
geometry
Channel
width
Channel
length
OTS/PFBT
treatment
Quantity Price
S221 Linear 1 mm 30 μm No 10 £549
S222 Linear 1 mm 30 μm Yes 10 £699
S223 Linear 1 mm 30 μm variable No 10 £549
S224 Linear 1 mm 30 μm variable Yes 10 £699
S225*# Linear 1 mm 10 μm No 10 £549
S226*# Linear 1 mm 10 μm Yes 10 £699
S227* Linear 1 mm 10 μm variable No 10 £549
S228* Linear 1 mm 10 μm variable Yes 10 £699
S231* Interdigitated 4 mm 20 μm No 10 £549
S232* Interdigitated 4 mm 20 μm Yes 10 £699
S233* Interdigitated 18 mm 50 μm No 10 £549
S234* Interdigitated 18 mm 50 μm Yes 10 £699
*S225 - S228 & S231-234 yield of working devices is 90% (18/20) per substrate and 95% total (190/200). 
#S225 and S226 are no longer available due to poor manufacturing yield on the corresponding E324 shadow masks.

 

manual icon HD OFET specification and usage guide

 


Datasheet

Ossila High Density Substrates feature 20 OFETs which can benefit your research in a number of ways. Firstly, production cost is reduced as a result of a higher volume of OFETs per substrate compared to the low density equivalents. This can help to stretch your budget to allow you to produce and test larger numbers of OFETs.

Secondly, producing OFETs is a far faster and less laborious process. Fabrication time is reduced by up to 50% when using prefabricated high density OFETs, freeing up more time to test the devices. As a result of this, greater volumes of statistics can be produced which in turn can provide more robust and reliable research.

High density FET substrate
Silicon/silicon oxide substrate with thermally evaporated gold electrodes. 20 OFETs per substrate.

 

Furthermore, OFET variability is reduced since a larger number of OFETs are produced with each fabrication. At Ossila we have optimised the fabrication process in order to produce consistently high quality substrates. In this respect, using our prefabricated substrates rather than fabricating your own can help you to gather more reliable data to benefit your research project.

Prefabricated high density substrates are ideal for mobility testing as they enable swift, efficient testing of high volumes of OFETs. The Ossila high-density OFET test board has been designed for this purpose. 

Rather than using a mechanical probe station to test OFETs, which is a delicate and time-consuming process, the high density test board allows testing of multiple OFETs at one time; simply drop the substrate into the test slot, secure the push-fit lid and connect the board via its BNC connectors to an array of test equipment.

The board has been intelligently designed to reduce external noise, leakage current and stray capacitance in order to provide reliable and precise low-current testing.

 

High density FET mobility test board
The Ossila High Density OFET Test Board, designed for rapid, reliable testing of multiple OFETs.

 

Specifications

We fabricate p-doped silicon substrates with an insulating 300 nm silicon oxide top layer. Gold is then thermally evaporated on top to produce gate electrodes which also cover the conductive edge of the substrate. It is therefore essential that the edge of the substrate is conductive and not covered with the silicon oxide layer. If not, the silicon oxide must be scratched off the sides of the substrates before it can be used.

Prefabricated OFET: gate electrode details
Structure of our prefabricated silicon/silicon oxide substrates.

 

At Ossila we have optimised the fabricating process to ensure that the edges are conductive and the substrate immediately ready to use.

We fabricate our high-density substrates with 1-2 nm chromium and 60-70 nm gold. The chromium acts as an adhesion layer to ensure the gold remains firmly attached to the silicon substrate.

One of the most difficult parts of substrate preparation is the OTS treatment; a small amount of moisture must be present to create a smooth monolayer, but too much moisture can result in a rough surface. After extensive research we have optimised this process in our labs and can therefore offer substrates pre-treated with OTS to accelerate your research program even further.

For individual details and dimension drawings of each substrate type see below.

 

Linear 1 mm x 30 µm constant channel length substrate (S221 and S222)

Geometry Linear
Arrangement 20 identical OFETs
Channel width 1 mm
Channel length 30 µm
30 micron channel High Density FET schematic
Dimension drawing of 1 mm x 30 µm substrate.

 

Linear 1mm x 30 µm variable channel length substrate (S223 and S224)

Geometry Linear
Arrangement 20 OFETs, 5 channel widths (4 of each width)
Channel width 1 mm
Channel length 30, 40, 50, 60 and 80 µm
30 micron variable channel High Density FET schematic
Dimension drawing of 1 mm x 30 µm variable substrate.

 

Linear 1 mm x 10 µm constant channel length substrate (S225 and S226)

Please note that S225 and S226 are no longer available due to poor manufacturing yield on the corresponding E324 shadow masks.

Geometry Linear
Arrangement 20 identical OFETs
Channel width 1 mm
Channel length 10 µm
10 micron channel HD FET schematic
Dimension drawing of 1 mm x 10 µm substrate.

 

Linear 1 mm x 10 µm variable channel length substrate (S227 and S228)

Geometry Linear
Arrangement 20 OFETS, 5 channel widths (4 of each width)
Channel width 1 mm
Channel length 10, 15, 20, 25 and 30 µm
10 micron variable channel HD FET schematic
Dimension drawing of 1 mm x 10 µm variable substrate.

 

Interdigitated 4 mm x 20 µm constant channel length substrate (S231 and S232)

Geometry Interdigitated
Arrangement 20 identical OFETs
Channel width 4 mm
Channel length 20 µm
interdigitated 20 micron channel HD FET schematic
Dimension drawing of one of the 4 mm x 20 µm devices on the high density substrate.

 

Interdigitated 18 mm x 50 µm constant channel length substrate (S233 and S234)

Geometry Interdigitated
Arrangement 20 identical OFETs
Channel width 18 mm
Channel length 50 µm
interdigitated 50 micron channel HD FET schematic
Dimension drawing of one of the 18 mm x 50 µm devices on the high density substrate.

 

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.