Active Area Deposition Mask, Low Density
Low Density Active Area Deposition Mask
For use with the low density OFET system
An evaporation mask for deposition of materials into the active area (source-drain channels). For use with the low density OFET system. A 100 μm standoff-spacer ensures that the mask does not touch the substrate while still enabling good deposition resolution.
Mask with direct contact: For sputtering and other non-directional deposition systems, as well as for thermal deposition systems with oblique angles or a very short throw, we recommend the use of the direct contact mask to get well-defined edges.
Mask with 100 μm spacer: For normal thermal evaporation systems we recommend the use of masks with the 100 μm spacer to help avoid scratches and allow better out-gassing.
Datasheet
System Overview
The low density fabrication system has four different masks available (source-drain, gate deposition, active area deposition, and insulator deposition) to allow the fabrication of devices in any geometry (top/bottom gates and top/bottom source-drain). The diagrams below show the features on each of the individual masks as well as how they fit together on a substrate.
Note that silicon oxide substrates do not need a gate mask which simplifies fabrication, however the use of a gate mask with quartz-glass substrates can allow lower operating voltages and lower parasitic capacitance.
