Molybdenum Tungsten Diselenide Powder
|Molecular weight||297.83 g/mol|
|Bandgap||~1.56 to 1.65 eV |
|Classification / Family||Transition metal dichalcogenides (TMDCs) alloy, 2D semiconductor Materials, Nano-electronics, Nano-photonics, Materials science|
|Preparation||Synthetic - Chemical Vapour Transport (CVT)|
|Electronic properties||2D Semiconductor|
Molybdenum tungsten diselenide (MoWSe2) is a 2D TMDC alloy. Alloying 2D TMDCs has proven to be an effective way of modulating the band gap because of the good thermodynamic stability (at room temperature) of the alloys.
MoWSe2 monolayers consist of two Se atomic layers and a sandwiched metal (Mo/W) atom layer. The monolayer of MoWSe2 shows alternating atomic arrangement of Mo and Se sites in the hexagonal rings, with the Mo atoms partially and randomly substituted by W atoms compared to MoSe2. Like graphite, its interlayers are bound by weak van der Waals.
MoWSe2 monolayers exhibit strong PL emission, indicating its direct band gap nature, while the bilayers and few-layers are indirect band gap semiconductors. Electrical transport measurement reveals n-type semiconducting transport behaviour with a high on/off ratio (>105) for MoWSe2 monolayers.
With a tunable band gap and band edge position, thin-layer nanosheets of molybdenum tungsten diselenide have applications in photodetectors, FETs, LEDs and photovoltaic devices such as being applied in hydrogen evolution reactions (HER).
Molybdenum tungsten diselenide powder is obtained via the CVT method, with purity typically in excess of 99.995%.
Molybdenum tungsten diselenide powder is generally used to prepare MoWSe2 quantum dot solutions and nano-platelets by liquid exfoliation, assisted by sonication. High-purity MoWSe2 powder can also be used in chemical vapour deposition to prepare high-quality mono-layer films.
Literature and Reviews
- Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport, M. Zhang et al., ACS Nano, 8 (7), 7130–7137 (2014); DOI: 10.1021/nn5020566.
- Structural Phase Transformation in Strained Monolayer MoWSe2 Alloy, A. Apte et al., ACS Nano, 12 (4), 3468–3476 (2018); DOI: 10.1021/acsnano.8b00248.
- Exciton valley dynamics in monolayer Mo1-xWxSe2 (x = 0, 0.5, 1), J. Ye et al., Appl. Phys. Lett. 111, 152106 (2017); doi: 10.1063/1.4995517.
- Persistent photoconductivity in two-dimensional Mo1!xWxSe2–MoSe2 van der Waals heterojunctions, X. Li et al., J. Mater. Res., 31 (7), 923-930 (2016); DOI: 10.1557/jmr.2016.35.
- Local Conduction in MoxW1–xSe2: The Role of Stacking Faults, Defects, and Alloying, P. Bampoulis et al., ACS Appl. Mater. Interfaces, 10 (15), 13218–13225 (2018); DOI: 10.1021/acsami.8b01506.
To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.