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Molybdenum Diselenide Few-Layer Film CAS 12058-18-3
Product Code M2170F11-1EA
Price £640 ex. VAT
£ GBP

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MoSe2 Few-Layer Film, with high electrical conductivity

Great potential for energy processing and storage devices

Molybdenum diselenide (MoSe2) few-layer films, CAS number 12058-18-3, have electrical and optical properties that are dependent on the number of layers a film has. Few-layer MoSe2 nanosheets have a high surface area and unique electronic (quasiparticle bandgap) properties due to interlayer coupling and screening effects. The band gap varies from 1.50 eV (in a monolayer) to 1.1 eV (in a bulk counterpart).

High Purity Molybdenum Diselenide film

High Purity

High purity >99% Molybdenum Diselenide Film

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Worldwide shipping

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Low Cost 12058-18-3

Low Cost

Low Cost Molybdenum Diselenide

high electrical conductivity 12058-18-3

High electrical conductivity

Unique electronics (quasiparticle bandgap)

Applications

Molybdenum diselenide few-layer films show great potential in energy processing and storage devices (such as lithium and sodium ion batteries) due to their large interlayer spacing (0.64 nm) and higher electrical conductivity.

It has also been widely used in lasers, capacitors, photodetectors, and photoelectrochemical cells as catalysts for hydrogen evolution reactions (HERs).

Synthesis

High-quality molybdenum diselenide few-layer films are directly grown on substrates (SiO2/Si) via the chemical vapour deposition (CVD) method.

Usage

MoSe2 few-layer films can be used for research purposes such as microscopic analysis, photoluminescence and Raman spectroscopy studies. These films can also be transferred to other substrates.

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Technical Data

CAS Number 12058-18-3
Chemical Formula MoSe2
Molecular Weight 253.86 g/mol
Bandgap 1.41 - 1.58 eV
Colour Black/Dark brown
Synonyms Molybdenum(IV) selenide, Molybdenum selenide
Classification / Family Transition metal dichalcogenides (TMDCs), 2D semiconductor Materials, Nano-electronics, Nano-photonics, Electrochemical energy storage system, Materials science

Product Details

Substrate SiO2/Si
Product Code M2170F11
Size 1 cm x 1 cm*
Growth Method CVD synthesis
Appearance Transparent
Purity >99%
Transparency >97%
Coverage >95%
Number of Layers 2 - 5
Sheet Resistance N/A
Transfer method Directly grown
Substrate Thickness 300 nm (oxide layer)

*Other sizes available: up to 2 cm × 2 cm.

High-quality molybdenum diselenide (MoSe2) few-layer films are available on SiO2/Si as standard. Different substrates of few-layer MoSe2 films, including Sapphire, Glass, Silicon and Quartz are also available via custom order. 

Please contact us for more information regarding custom products.

    MSDS Document

    Molybdenum diselenide few-layer film MSDSMolybdenum diselenide few-layer film

    Pricing Table

    Product Code Substrate Size Quantity (EA) Price
    M2170F11 SiO2/Si 1 cm × 1 cm 1 £640

    Literature and Reviews

    • Characterization of few-layer 1T-MoSe2 and its superior performance in the visible-light induced hydrogen evolution reaction, U. Gupta, et al., APL Mater. 2, 092802 (2014); DIO: 10.1063/1.4892976.
    • Few-layered MoSe2 nanosheets as an advanced electrode material for supercapacitors, S. Balasingam etal., Dalton Trans., 44, 15491 (2015); DOI: 10.1039/c5dt01985k.
    • Layer-controlled synthesis of wafer-scale MoSe2 nanosheets for photodetector arrays, T. Dai et al., J. Mater. Sci., 53, 8436–8444 (2018); DIO: 10.1007/s10853-018-2142-6.
    • Few-Layer MoSe2 Nanosheets with Expanded (002) Planes Confined in Hollow Carbon Nanospheres for Ultra high-Performance Na-Ion Batteries, H. Liu et al., Adv. Funct. Mater., 28, 1707480 (2018); DOI: 10.1002/adfm.201707480.
    • Nonlinear optical performance of few-layer molybdenum diselenide as a slow-saturable absorber, G. Wang et al., Photonic Res., 6(7), 674-680 (2018); DIO: 10.1364/PRJ.6.000674.
    • A High Efficiency Si Photoanode Protected by Few-Layer MoSe2, S. Vanka et al., Solar RRL, 2, 1800113 *2018); DOI: 10.1002/solr.201800113.
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