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Gate Deposition Mask - ITO OFETs

Substrates and Fabrication

Product Code E271-SPC
Price $325 ex. VAT

An evaporation mask for deposition of gate contacts onto Ossila's pre-patterned ITO substrates (S161). The T-shaped aperture allows the gate to cover the interdigitated source-drain contacts while also providing easy electrical connection via the Ossila USB test board.

Mask with direct contact: For sputtering and other non-directional deposition systems, as well as for thermal deposition systems with oblique angles or a very short throw, we recommend the use of the direct contact mask to get well-defined edges.

Mask with 100 μm spacer: For normal thermal evaporation systems we recommend the use of masks with the 100 μm spacer to help avoid scratches and allow better out-gassing.


Size 75 mm x 75 mm
Thickness 1.7mm without spacer, 1.8mm with spacer (exc. bolts)
Material Stainless steel
Capacity 12 substrates (S161 or S162)
Spacer Optional 100 μm substrate separation spacer on one side
OFET evaporation stack for top gate ITO substrates (exploded diagram) 







Substrate holder and 100 μm standoff



Gate shadow mask

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