Hafnium Diselenide Powder and Crystal


Order Code: M2153C1
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Low price, high purity 2D hafnium diselenide powder and crystals

For the development of next-generation electronics, optoelectronics, and nanotechnology

Hafnium diselenide (HfSe2) is a layered 2D semiconducting material. It is part of the group IV transition metal dichalcogenides (TMDCs). 

2D semiconductor HfSe2 is increasing in popularity for use in electronic devices due to the existence of natively-compatible HfO2 with desirable high-κ dielectrics. It is one of the first 2D materials to emulate the technologically-relevant properties of silicon (whilst enabling lower operation power than possible with silicon and its silicon oxide insulator) on a atomically-thin and smaller circuit.

HfSe2 has an indirect bandgap with a measured bulk value of Eg = 1.1 eV (similar to that of silicon) and a remarkably high phonon-limited mobility of about 3500 cm2/V·s at room temperature.

We supply low price hafnium diselenide in several different forms for a range of applications.

Hafnium diselenide powder

Hafnium diselenide powder

Can be used for preparation of hafnium diselenide nanoplates nano-platelets and ultrathinthin films

Available in quantities of 1g

≥ 99.995% purity

From £269.00

Hafnium diselenide crystals by size

Hafnium diselenide crystal

Can be used to produce single or few-layer hafnium diselenide sheets via mechanical or liquid exfoliation

Small (≥10mm2) or medium (≥25mm2) crystals available*

≥ 99.999% purity

From £396.00

*Typical representative size, areas/dimensions may vary.

Bulk single hafnium diselenide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation. Single hafnium diselenide crystal or films produced from such crystals are suitable for study using atomic force microscopy or transmission electron microscopy.

Few-layer HfSe2 nanosheets and nanoparticles can also obtained from hafnium diselenide powder by liquid-exfoliation.

Key Product Data

  • High purity hafnium diselenide suitable for a range of applications
  • Available in powdered form or in crystal form by weight or size
  • Low price with free worldwide shipping on qualifying orders

Structure and Properties

After exfoliation of hafnium diselenide crystal or powder, hafnium diselenide typically has the following properties:

  • ‎Octahedral (1T, space group: P3m1)
  • Group IV transition metal dichalcogenides (TMDCs)
  • HfSe2 has an indirect bandgap with a measured bulk value of Eg = 1.1 eV (similar to that of silicon)
  • Remarkably high phonon-limited mobility of about 3500 cm2/V·s at room temperature
  • One of the first 2D materials to emulate the technologically-relevant properties of silicon

Applications

Hafnium diselenide (HfSe2) single crystals can be used to prepare monolayer and few-layer HfS2 by mechanical or liquid exfoliation. 

Hafnium diselenide powder is suitable for liquid chemical exfoliation to prepare HfSe2 nanosheets and nanoparticles down to few-layer films.

Hafnium diselenide is slightly n-type with an indirect band gap of ∼1.1 eV, making it a great candidate for field-effect transistors and photovoltaic applications. Au-contacted HfSe2 phototransistors give a high on/off ratio of 106 and mobilities in the range of 2.6–6.5 cm2 V−1 s−1, with a high responsivity of 252 A/W and an ultrafast response time of 7.8 ms.

Hf-based TMDs are small bandgap semiconductors possessing large work functions and reasonably high mobility. They are suitable for photovoltaic and FET applications. Ultrathin nanosheets of HfSe2 can also be built into ultrafast and ultrasensitive phototransistor devices.

    Technical Data

    CAS number ‎12162-21-9
    Chemical formula HfSe2
    Molecular weight 336.43 g/mol
    Bandgap ~ 1.1 eV (indirect)
    Preparation Synthetic - Chemical Vapour Transport (CVT)
    Structure ‎Octahedral (1T)
    Electronic properties 2D Semiconductor
    Melting point No data available
    Colour Dark brown
    Synonyms Hafnium selenide, Bis(selanylidene)hafnium
    Classification / Family Transition metal dichalcogenides (TMDCs), 2D Semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science

    Product Details

    Form Purity

    Hafnium Diselenide Powder

    ≥ 99.995%
    Hafnium Diselenide Crystal ≥ 99.999%

    MSDS Documents

    Hafnium diselenide powder MSDSHafnium diselenide powder

    Hafnium diselenide crystal MSDSHafnium diselenide crystal

    Structure of Hafnium Diselenide

    HfSeadopts the CdI2 structure (1T), consisting of a single-layer plane of hexagonal close-packed Hf atoms sandwiched by two-layer planes of hexagonal close-packed Se atoms. The Hf atom is octahedrally coordinated with six selenide chalcogen atoms. The layers are stacked together by weak van der Waals (vdW) forces, and can be exfoliated into thin 2D layers. 

    hfse2 crystal structure
    The crystal structure of single-layer hafnium diselenide (HfSe2)

    Applications of Hafnium Diselenide

    Hafnium diselenide is slightly n-type with an indirect band gap of ∼1.1 eV, making it a great candidate for field-effect transistors and photovoltaic applications. Au-contacted HfSe2 phototransistors give a high on/off ratio of 106 and mobilities in the range of 2.6–6.5 cm2 V−1 s−1, with a high responsivity of 252 A/W and an ultrafast response time of 7.8 ms.

    Hf-based TMDs are small bandgap semiconductors possessing large work functions and reasonably high mobility. They are suitable for photovoltaic and FET applications. Ultrathin nanosheets of HfSe2 can also be built into ultrafast and ultrasensitive phototransistor devices.

    Pricing Table (All)

    Form Size/Weight* Product Code Price
    Powder 1 g M2153C1 £269.00
    Crystal Small (≥ 10 mm2) M2153A10 £396.00 ea.
    Crystal Medium (≥ 25 mm2) M2153A25 £638.00 ea.

    *typical representative size, areas/dimensions may vary.

    Shipping is free for qualifying orders.

    Literature and Reviews

    1. Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy, K. E. Aretouli et al., Appl. Phys. Lett. 106, 143105 (2015); doi: 10.1063/1.4917422.
    2. Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment, M. Kang et al., Nanoscale, 9, 1645 (2017); DOI: 10.1039/c6nr08467b.
    3. 3d transition metal doping-induced electronic structures and magnetism in 1T-HfSe2 monolayers, X. Zhao et al., RSC Adv., 7, 52747–52754 (2017); DOI: 10.1039/c7ra11040e.
    4. HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy, R. Yue et al., ACS Nano, 9 (1), 474–480 (2015);
      DOI: 10.1021/nn5056496
    5. Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2, L Yin et al., Appl. Phys. Lett. 109, 213105 (2016); dio: 10.1063/1.4968808.
    6. Electrical characterization of multilayer HfSe2 field-effect transistors on SiO2 substrate, M. Kang et al., Appl. Phys. Lett. 106, 143108 (2015); DIO: 10.1063/1.4917458.
    7. Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2, L. Yin et al., Appl. Phys. Lett. 109, 213105 (2016); DIO: 10.1063/1.4968808.
    8. Device Performance Assessment of Monolayer HfSe2: A New Layered Material Compatible With High-k HfO2, A. AlMutairi et al., IEEE Electron Device Lett., , 39 (11), 1772-1775 (2018); DIO: 10.1109/LED.2018.2867957.
    9. HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy, R. Yue et al., ACS Nano, 9 (1), 474–480 (2015); DOI: 10.1021/nn5056496.
    10. Electronic and mechanical responses of two-dimensional HfS2, HfSe2, ZrS2, and ZrSe2 from first-principles, M. Salavati, Front. Struct. Civ. Eng., 13(2): 486–494 (2019); DIO: 10.1007/s11709-018-0491-5.

    To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.