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Product Code M2153C1-1g
Price £350 ex. VAT

Low price, high purity 2D hafnium diselenide powder and crystals

For the development of next-generation electronics, optoelectronics, and nanotechnology


Technical Data | MSDS | Structure | Literature and Reviews


Hafnium diselenide (HfSe2), CAS number 12162-21-9, is a layered 2D semiconducting material. It is part of the group IV transition metal dichalcogenides (TMDCs).

2D semiconductor HfSe2 is increasing in popularity for use in electronic devices due to the existence of natively-compatible HfO2 with desirable high-κ dielectrics. It is one of the first 2D materials to emulate the technologically-relevant properties of silicon (whilst enabling lower operation power than possible with silicon and its silicon oxide insulator) on a atomically-thin and smaller circuit.

High Purity 2D hafnium diselenide

High Purity

High purity 2D hafnium diselenide

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Low price Hafnium Diselenide

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Low price Hafnium Diselenide

12162-21-9 Powder & Crystals

Powder & Crystals

Available in powder and crystal forms

HfSe2 has an indirect bandgap with a measured bulk value of Eg = 1.1 eV (similar to that of silicon) and a remarkably high phonon-limited mobility of about 3500 cm2/V·s at room temperature.

We supply low price hafnium diselenide in several different forms for a range of applications.

Hafnium diselenide powder

Hafnium Diselenide Powder

Can be used for preparation of hafnium diselenide nanoplates and ultrathin films

Available in quantities of 1 g

≥99.995% purity

From £350

Hafnium diselenide crystal

Hafnium Diselenide Crystals by Size

Can be used to produce single or few-layer hafnium diselenide sheets via mechanical or liquid exfoliation

Small (≥10 mm2) or medium (≥25 mm2) crystals available*

≥99.999% purity

From £520

*Typical representative size, areas/dimensions may vary.

Bulk single hafnium diselenide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation. Single hafnium diselenide crystal or films produced from such crystals are suitable for study using atomic force microscopy or transmission electron microscopy.

Few-layer HfSe2 nanosheets and nanoparticles can also obtained from hafnium diselenide powder by liquid-exfoliation.

Technical Data


CAS Number ‎12162-21-9
Chemical Formula HfSe2
Molecular Weight 336.43 g/mol
Bandgap ~1.1 eV (indirect)
Preparation Synthetic - Chemical Vapour Transport (CVT)
Structure ‎Octahedral (1T)
Electronic Properties 2D Semiconductor
Melting Point N/A
Colour Dark brown
Synonyms Hafnium selenide, Bis(selanylidene)hafnium
Classification / Family Transition metal dichalcogenides (TMDCs), 2D Semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science

Product Details


Form Purity
Powder ≥99.995%
Crystal ≥99.999%

Pricing Table


Product Code Form Size/Weight* Price
M2153C1 Powder 1 g £350
M2153A10 Crystal Small (≥10 mm2) £520 ea.
M2153A25 Crystal Medium (≥25 mm2) £850 ea.

*typical representative size, areas/dimensions may vary.

Shipping is free for qualifying orders.

Key Product Data

MSDS Documents


Hafnium diselenide powder MSDSHafnium diselenide powder

Hafnium diselenide crystal MSDSHafnium diselenide crystal

Structure of Hafnium Diselenide


HfSe2 adopts the CdI2 structure (1T), consisting of a single-layer plane of hexagonal close-packed Hf atoms sandwiched by two-layer planes of hexagonal close-packed Se atoms. The Hf atom is octahedrally coordinated with six selenide chalcogen atoms. The layers are stacked together by weak van der Waals (vdW) forces, and can be exfoliated into thin 2D layers.

hfse2 crystal structure
The crystal structure of single-layer hafnium diselenide (HfSe2)

Properties of Hafnium Diselenide


After exfoliation of hafnium diselenide crystal or powder, hafnium diselenide typically has the following properties:

  • ‎Octahedral (1T, space group: P3m1)
  • Group IV transition metal dichalcogenides (TMDCs)
  • HfSe2 has an indirect bandgap with a measured bulk value of Eg = 1.1 eV (similar to that of silicon)
  • Remarkably high phonon-limited mobility of about 3500 cm2/V·s at room temperature
  • One of the first 2D materials to emulate the technologically-relevant properties of silicon

Applications of Hafnium Diselenide


Hafnium diselenide (HfSe2) single crystals can be used to prepare monolayer and few-layer HfS2 by mechanical or liquid exfoliation.

Hafnium diselenide powder is suitable for liquid chemical exfoliation to prepare HfSe2 nanosheets and nanoparticles down to few-layer films.

Hafnium diselenide is slightly n-type with an indirect band gap of ∼1.1 eV, making it a great candidate for field-effect transistors and photovoltaic applications. Au-contacted HfSe2 phototransistors give a high on/off ratio of 106 and mobilities in the range of 2.6–6.5 cm2 V−1 s−1, with a high responsivity of 252 A/W and an ultrafast response time of 7.8 ms.

Hf-based TMDs are small bandgap semiconductors possessing large work functions and reasonably high mobility. They are suitable for photovoltaic and FET applications. Ultrathin nanosheets of HfSe2 can also be built into ultrafast and ultrasensitive phototransistor devices.

    Hafnium diselenide is slightly n-type with an indirect band gap of ∼1.1 eV, making it a great candidate for field-effect transistors and photovoltaic applications. Au-contacted HfSe2 phototransistors give a high on/off ratio of 106 and mobilities in the range of 2.6–6.5 cm2 V−1 s−1, with a high responsivity of 252 A/W and an ultrafast response time of 7.8 ms.

    Hf-based TMDs are small bandgap semiconductors possessing large work functions and reasonably high mobility. They are suitable for photovoltaic and FET applications. Ultrathin nanosheets of HfSe2 can also be built into ultrafast and ultrasensitive phototransistor devices.

    Literature and Reviews


    1. Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy, K. E. Aretouli et al., Appl. Phys. Lett. 106, 143105 (2015); doi: 10.1063/1.4917422.
    2. Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment, M. Kang et al., Nanoscale, 9, 1645 (2017); DOI: 10.1039/c6nr08467b.
    3. 3d transition metal doping-induced electronic structures and magnetism in 1T-HfSe2 monolayers, X. Zhao et al., RSC Adv., 7, 52747–52754 (2017); DOI: 10.1039/c7ra11040e.

    We stock a wide range of 2D materials available to purchase online. Please contact us if you cannot find what you are looking for.

    Resources and Support


    Viscoelastic Transfer of 2D Material Using PDMS

    Viscoelastic transfer using polydimethylsiloxane (PDMS) stamps is one of the methods used for the deterministic placement of 2D materials and the fabrication of van der Waals heterostructures. It relies on the viscoelasticity of PDMS, which behaves as an elastic solid on short time scales, but as a viscous fluid on long time scales.

    Learn more...
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